图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Frequency | Gain | Voltage - Test | Current Rating | Noise Figure | Current - Test | Power - Output | Voltage - Rated | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
IC FET RF LDMOS 70W H-36265-2
|
封装: 2-Flatpack, Fin Leads |
库存3,376 |
|
2.14GHz | 16.5dB | 30V | 10µA | - | 550mA | 18W | 65V | 2-Flatpack, Fin Leads | H-36265-2 |
||
Infineon Technologies |
IC FET RF LDMOS 55W H-36265-2
|
封装: 2-Flatpack, Fin Leads |
库存2,608 |
|
960MHz | 18.5dB | 28V | 10µA | - | 600mA | 55W | 65V | 2-Flatpack, Fin Leads | H-36265-2 |
||
Ampleon USA Inc. |
TRANS RF 230W ACC-6
|
封装: - |
库存2,320 |
|
- | - | - | - | - | - | - | - | - | - |
||
NXP |
MOSFET RF 64QFP
|
封装: - |
库存6,128 |
|
- | - | - | - | - | - | - | - | - | - |
||
NXP |
FET RF 2CH 110V 225MHZ NI1230
|
封装: NI-1230 |
库存5,344 |
|
225MHz | 24dB | 50V | - | - | 150mA | 1000W | 110V | NI-1230 | NI-1230 |
||
Fairchild/ON Semiconductor |
JFET N-CH 25V 30MA TO92
|
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
库存5,568 |
|
450MHz | 12dB | 10V | 30mA | 3dB | 10mA | - | 25V | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 14.5DB SOT540A
|
封装: SOT-540A |
库存3,088 |
|
600MHz | 14.5dB | 28V | 18A | - | - | 120W | 65V | SOT-540A | LDMOST |
||
Ampleon USA Inc. |
RF FET NCHA 65V 7DB SOT171A
|
封装: SOT-171A |
库存3,808 |
|
960MHz | 7dB | 28V | 3.5A | - | 40mA | 20W | 65V | SOT-171A | CDFM6 |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT502B
|
封装: SOT-502B |
库存2,928 |
|
2.11GHz ~ 2.17GHz | 18.5dB | 28V | 28A | - | 950mA | 30W | 65V | SOT-502B | SOT502B |
||
Infineon Technologies |
FET RF 65V 2.14GHZ H-36260-2
|
封装: 2-Flatpack, Fin Leads |
库存6,064 |
|
2.14GHz | 15.8dB | 30V | 10µA | - | 1.6A | 50W | 65V | 2-Flatpack, Fin Leads | H-36260-2 |
||
NXP |
FET RF 120V 1.3GHZ NI780S
|
封装: NI-780S |
库存7,040 |
|
1.3GHz | 22.7dB | 50V | - | - | 100mA | 250W | 120V | NI-780S | NI-780S |
||
NXP |
FET RF 65V 2.7GHZ NI-780S
|
封装: NI-780S |
库存5,680 |
|
2.7GHz | 16.5dB | 28V | - | - | 1.5A | 23W | 65V | NI-780S | NI-780S |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 18.9DB SOT502B
|
封装: SOT-502B |
库存3,808 |
|
1.81GHz ~ 1.88GHz | 18.9dB | 28V | - | - | 1.6A | 55W | 65V | SOT-502B | - |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 21DB SOT12042
|
封装: SOT-1204-2 |
库存7,520 |
|
440MHz | 21dB | 28V | - | - | 2mA | 210W | 65V | SOT-1204-2 | SOT1204-2 |
||
NXP |
FET RF 2CH 65V 2.17GHZ OM780-4
|
封装: OM780-4 |
库存6,224 |
|
2.17GHz | 18.9dB | 28V | - | - | 450mA | 6.3W | 65V | OM780-4 | OM780-4 |
||
STMicroelectronics |
TRANS RF N-CH FET POWERSO-10RF
|
封装: - |
库存3,504 |
|
870MHz | 17dB | 13.6V | 8A | - | 350mA | 15W | 40V | - | PowerSO-10RF (Straight Lead) |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT502B
|
封装: SOT-502B |
库存7,328 |
|
2.45GHz | 19dB | 28V | - | - | 1.3A | 140W | 65V | SOT-502B | SOT502B |
||
NXP |
FET RF 100V 1.09GHZ PLD-1.5
|
封装: PLD-1.5 |
库存6,084 |
|
1.09GHz | 25dB | 50V | - | - | 10mA | 10W | 100V | PLD-1.5 | PLD-1.5 |
||
STMicroelectronics |
FET RF 25V 870MHZ
|
封装: TO-243AA |
库存6,080 |
|
870MHz | 15dB | 7.5V | 2A | - | 100mA | 2W | 25V | TO-243AA | SOT-89 |
||
Fairchild/ON Semiconductor |
JFET N-CH 35V 15MA SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存36,000 |
|
400MHz | - | 15V | 15mA | 4dB | 5mA | - | 35V | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 15DB SOT1121B
|
封装: SOT-1121B |
库存7,032 |
|
3.4GHz ~ 3.6GHz | 15dB | 28V | - | - | 600mA | 20W | 65V | SOT-1121B | CDFM4 |
||
Cree/Wolfspeed |
FET RF 84V 6GHZ 440166
|
封装: 440166 |
库存6,204 |
|
4.5GHz ~ 6GHz | 11dB | 28V | - | - | 250mA | 30W | 84V | 440166 | 440166 |
||
NXP |
RF MOSFET LDMOS 50V NI1230
|
封装: - |
Request a Quote |
|
960MHz ~ 1.215GHz | 19.6dB | 50 V | 10µA | - | 100 mA | 1000W | 112 V | NI-1230-4S | NI-1230-4S |
||
NXP |
RF MOSFET HEMT 50V OM270-2
|
封装: - |
Request a Quote |
|
2.7GHz ~ 3.5GHz | 17dB | 50 V | - | - | 70 mA | 60W | 125 V | TO-270AA | OM-270-2 |
||
Freescale Semiconductor |
RF MOSFET 12.5V TO272-8
|
封装: - |
Request a Quote |
|
470MHz | 10dB | 12.5 V | 1µA | - | 800 mA | 70W | 40 V | TO-272-8 | TO-272-8 |
||
MACOM Technology Solutions |
RF MOSFET LDMOS 28V H-36265-2
|
封装: - |
Request a Quote |
|
1.805GHz ~ 1.88GHz | 16.5dB | 28 V | 10µA | - | 550 mA | 70W | 65 V | H-36265-2 | H-36265-2 |
||
WAVEPIA.,Co.Ltd |
RF MOSFET GAN HEMT 28V 360BH
|
封装: - |
库存60 |
|
5GHz | 17.4dB | 28 V | - | - | 100 mA | 25W | 160 V | 360BH | 360BH |
||
MACOM Technology Solutions |
RF MOSFET HEMT 50V 440226
|
封装: - |
Request a Quote |
|
2.9GHz ~ 3.5GHz | 15dB | 50 V | - | - | 500 mA | 400W | 150 V | 440226 | 440226 |