页 1141 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  1,141/1,502
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制造商
描述
封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF6711STR1PBF
Infineon Technologies

MOSFET N-CH 25V 19A DIRECTFET-SQ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? SQ
  • Package / Case: DirectFET? Isometric SQ
封装: DirectFET? Isometric SQ
库存2,688
MOSFET (Metal Oxide)
25V
19A (Ta), 84A (Tc)
4.5V, 10V
2.35V @ 25µA
20nC @ 4.5V
1810pF @ 13V
±20V
-
2.2W (Ta), 42W (Tc)
3.8 mOhm @ 19A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? SQ
DirectFET? Isometric SQ
IPI60R600CPAKSA1
Infineon Technologies

MOSFET N-CH 600V 6.1A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存6,528
MOSFET (Metal Oxide)
600V
6.1A (Tc)
10V
3.5V @ 220µA
27nC @ 10V
550pF @ 100V
±20V
-
60W (Tc)
600 mOhm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRLZ34NLPBF
Infineon Technologies

MOSFET N-CH 55V 30A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存242,880
MOSFET (Metal Oxide)
55V
30A (Tc)
4V, 10V
2V @ 250µA
25nC @ 5V
880pF @ 25V
±16V
-
3.8W (Ta), 68W (Tc)
35 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
RP1E090XNTCR
Rohm Semiconductor

MOSFET N-CH 30V 9A MPT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MPT6
  • Package / Case: 6-SMD, Flat Leads
封装: 6-SMD, Flat Leads
库存4,144
MOSFET (Metal Oxide)
30V
9A (Ta)
4V, 10V
2.5V @ 1mA
6.8nC @ 5V
440pF @ 10V
±20V
-
2W (Ta)
17 mOhm @ 9A, 10V
150°C (TJ)
Surface Mount
MPT6
6-SMD, Flat Leads
FQB13N06TM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 13A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,776
MOSFET (Metal Oxide)
60V
13A (Tc)
10V
4V @ 250µA
7.5nC @ 10V
310pF @ 25V
±25V
-
3.75W (Ta), 45W (Tc)
135 mOhm @ 6.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FQD10N20LTF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存164,016
MOSFET (Metal Oxide)
200V
7.6A (Tc)
5V, 10V
2V @ 250µA
17nC @ 5V
830pF @ 25V
±20V
-
2.5W (Ta), 51W (Tc)
360 mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
IPU80R1K4CEAKMA1
Infineon Technologies

MOSFET N-CH 800V TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存6,128
MOSFET (Metal Oxide)
800V
3.9A (Tc)
10V
3.9V @ 240µA
23nC @ 10V
570pF @ 100V
±20V
-
63W (Tc)
1.4 Ohm @ 2.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-251-3
TO-251-3 Short Leads, IPak, TO-251AA
hot NTTFS4929NTAG
ON Semiconductor

MOSFET N-CH 30V 34A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 34A(Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 810mW (Ta), 22.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: 8-PowerWDFN
库存85,008
MOSFET (Metal Oxide)
30V
6.6A (Ta), 34A(Tc)
4.5V, 10V
2.2V @ 250µA
8.8nC @ 4.5V
920pF @ 15V
±20V
-
810mW (Ta), 22.3W (Tc)
11 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot NTLUS3A90PZTAG
ON Semiconductor

MOSFET P-CH 20V 2.6A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-PowerUFDFN
封装: 6-PowerUFDFN
库存122,340
MOSFET (Metal Oxide)
20V
2.6A (Ta)
1.5V, 4.5V
1V @ 250µA
12.3nC @ 4.5V
950pF @ 10V
±8V
-
600mW (Ta)
62 mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
BUK761R7-40E,118
Nexperia USA Inc.

MOSFET N-CH 40V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 324W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,312
MOSFET (Metal Oxide)
40V
120A (Tc)
10V
4V @ 1mA
118nC @ 10V
9700pF @ 25V
±20V
-
324W (Tc)
1.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STP9NK50ZFP
STMicroelectronics

MOSFET N-CH 500V 7.2A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存764,160
MOSFET (Metal Oxide)
500V
7.2A (Tc)
10V
4.5V @ 100µA
32nC @ 10V
910pF @ 25V
±30V
-
30W (Tc)
850 mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IPD053N06NATMA1
Infineon Technologies

MOSFET N-CH 60V 18A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 36µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,952
MOSFET (Metal Oxide)
60V
18A (Ta), 45A (Tc)
6V, 10V
2.8V @ 36µA
27nC @ 10V
2000pF @ 30V
±20V
-
3W (Ta), 83W (Tc)
5.3 mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
SI3134KL-TP
Micro Commercial Co

N-CHANNEL MOSFET, SOT-883 PACKAG

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883
  • Package / Case: SC-101, SOT-883
封装: SC-101, SOT-883
库存7,104
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
SOT-883
SC-101, SOT-883
hot RE1C002ZPTL
Rohm Semiconductor

1.2V DRIVE PCH MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3F (SOT-416FL)
  • Package / Case: SC-89, SOT-490
封装: SC-89, SOT-490
库存216,000
MOSFET (Metal Oxide)
20V
200mA (Ta)
4.5V
1V @ 100µA
1.4nC @ 4.5V
115pF @ 10V
±10V
-
150W (Tc)
1.2 Ohm @ 200mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
EMT3F (SOT-416FL)
SC-89, SOT-490
hot STD4NK50Z-1
STMicroelectronics

MOSFET N-CH 500V 3A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存466,656
MOSFET (Metal Oxide)
500V
3A (Tc)
10V
4.5V @ 50µA
12nC @ 10V
310pF @ 25V
±30V
-
45W (Tc)
2.7 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
DMP510DL-7
Diodes Incorporated

MOSFET P-CH 50V 0.18A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 24.6pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存24,384
MOSFET (Metal Oxide)
50V
180mA (Ta)
5V
2V @ 1mA
-
24.6pF @ 25V
±30V
-
310mW (Ta)
10 Ohm @ 100mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
G7K2N20HE
Goford Semiconductor

MOSFET N-CH ESD 200V 2A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
-
2A (Tc)
4.5V, 10V
2.5V @ 250µA
-
-
±20V
-
1.8W (Tc)
700mOhm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
NVHL080N120SC1
onsemi

SICFET N-CH 1200V 44A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
  • Vgs (Max): +25V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 348W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: -
库存1,155
SiCFET (Silicon Carbide)
1200 V
44A (Tc)
20V
4.3V @ 5mA
56 nC @ 20 V
1670 pF @ 800 V
+25V, -15V
-
348W (Tc)
110mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IMW120R030M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 56A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
封装: -
库存5,061
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
15V, 18V
5.7V @ 10mA
63 nC @ 18 V
2120 pF @ 800 V
+23V, -7V
-
227W (Tc)
40mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
CMS11N10Q8-HF
Comchip Technology

MOSFET N-CH 100V 11A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4708 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
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MOSFET (Metal Oxide)
100 V
11A (Ta)
4.5V, 10V
2.4V @ 250µA
75 nC @ 10 V
4708 pF @ 25 V
±20V
-
3.1W (Ta)
14mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
3LN01SP-AC
onsemi

NCH 1.5V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NTTFS010N10MCLTAG
onsemi

MOSFET N-CH 100V 10.7A/50A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta),52W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: -
库存4,050
MOSFET (Metal Oxide)
100 V
10.7A (Ta), 50A (Tc)
4.5V, 10V
3V @ 85µA
30 nC @ 10 V
2150 pF @ 50 V
±20V
-
2.3W (Ta),52W (Tc)
10.6mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
DI170N04D2-AQ
Diotec Semiconductor

IC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8325 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
170A (Tc)
10V
2V @ 250µA
162 nC @ 10 V
8325 pF @ 20 V
±20V
-
89.2W (Tc)
1.5mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263AB (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RFP2N15
Harris Corporation

N-CHANNEL, MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
150 V
2A (Tc)
10V
4V @ 250µA
-
200 pF @ 25 V
±20V
-
25W (Tc)
1.75Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
NVMYS2D4N04CTWG
onsemi

MOSFET N-CH 40V 30A/138A LFPAK4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK4 (5x6)
  • Package / Case: SOT-1023, 4-LFPAK
封装: -
库存9,000
MOSFET (Metal Oxide)
40 V
30A (Ta), 138A (Tc)
10V
3.5V @ 90µA
32 nC @ 10 V
2100 pF @ 25 V
±20V
-
3.9W (Ta), 83W (Tc)
2.3mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
PJD35N06A_L2_00001
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存8,055
MOSFET (Metal Oxide)
60 V
4.7A (Ta), 35A (Tc)
4.5V, 10V
2.5V @ 250µA
28 nC @ 10 V
1680 pF @ 20 V
±20V
-
1.1W (Ta), 63W (Tc)
21mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
NTE491SM
NTE Electronics, Inc

MOSFET N-CHANNEL 60V 115MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
115mA (Ta)
4.5V, 10V
2.5V @ 250µA
-
50 pF @ 25 V
±20V
-
200mW (Ta)
7.5Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
NVMFWS021N10MCLT1G
onsemi

PTNG 100V LL SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 42µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
  • Package / Case: 8-PowerTDFN, 5 Leads
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
8.4A (Ta), 31A (Tc)
4.5V, 10V
3V @ 42µA
13 nC @ 10 V
850 pF @ 50 V
±20V
-
3.6W (Ta), 49W (Tc)
23mOhm @ 7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
5-DFNW (4.9x5.9) (8-SOFL-WF)
8-PowerTDFN, 5 Leads