图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 44A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存36,000 |
|
MOSFET (Metal Oxide) | 30V | 44A (Tc) | 4.5V, 10V | 3V @ 250µA | 20nC @ 5V | 1650pF @ 25V | ±20V | - | 62W (Tc) | 16 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存28,284 |
|
MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 32 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 20V 54A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存5,984 |
|
MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | ±20V | - | 3.8W (Ta), 71W (Tc) | 14 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,120 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 220W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 100V TO-3
|
封装: TO-204AA, TO-3 |
库存4,672 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 210 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA | TO-204AA, TO-3 |
||
IXYS |
MOSFET N-CH 500V 21A ISOPLUS220
|
封装: ISOPLUS220? |
库存5,456 |
|
MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 4V @ 4mA | 135nC @ 10V | 4200pF @ 25V | ±20V | - | 230W (Tc) | 230 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 6.7A TO-220F
|
封装: TO-220-3 Full Pack |
库存7,456 |
|
MOSFET (Metal Oxide) | 250V | 6.7A (Tc) | 10V | 5V @ 250µA | 20nC @ 10V | 700pF @ 25V | ±30V | - | 45W (Tc) | 420 mOhm @ 3.35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 60V 80A TO-247
|
封装: TO-247-3 |
库存18,852 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 250µA | 189nC @ 10V | 7600pF @ 25V | ±20V | - | 250W (Tc) | 10 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 60A POLARPAK
|
封装: 10-PolarPAK? (L) |
库存2,032 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 160nC @ 10V | 7000pF @ 15V | ±20V | - | 5.2W (Ta), 125W (Tc) | 1.9 mOhm @ 23.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (L) | 10-PolarPAK? (L) |
||
IXYS Integrated Circuits Division |
MOSFET N-CH 350V 0.005A SOT-223
|
封装: TO-261-4, TO-261AA |
库存5,120 |
|
MOSFET (Metal Oxide) | 350V | 5mA (Ta) | -0.35V | - | - | 300pF @ 0V | ±20V | Depletion Mode | 2.5W (Ta) | 14 Ohm @ 50mA, 350mV | -40°C ~ 110°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 6.6A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,000 |
|
MOSFET (Metal Oxide) | 800V | 6.6A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1850pF @ 25V | ±30V | - | 3.13W (Ta), 167W (Tc) | 1.5 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 30A 8-PQFN
|
封装: 8-PowerTDFN |
库存6,672 |
|
MOSFET (Metal Oxide) | 25V | 30A (Ta), 70A (Tc) | 4.5V, 10V | 2.2V @ 1mA | 68nC @ 10V | 4350pF @ 13V | ±12V | - | 2.5W (Ta), 65W (Tc) | 1.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO-220F
|
封装: TO-220-3 Full Pack |
库存8,316 |
|
MOSFET (Metal Oxide) | 400V | 10.5A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 1090pF @ 25V | ±30V | - | 44W (Tc) | 530 mOhm @ 5.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Texas Instruments |
MOSFET N-CH 100V 100A TO220-3
|
封装: TO-220-3 |
库存213,912 |
|
MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 3.3V @ 250µA | 38nC @ 10V | 3870pF @ 50V | ±20V | - | 214W (Tc) | 7.7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 30V 12A POWERDI
|
封装: 8-PowerWDFN |
库存4,896 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | ±20V | Schottky Diode (Body) | 890mW (Ta) | 10 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
Micro Commercial Co |
N-CHANNEL MOSFET, SOT-523 PACKAG
|
封装: SOT-523 |
库存4,160 |
|
MOSFET (Metal Oxide) | 20V | 500mA | 4.5V | 1.2V @ 250µA | 750nC @ 4.5V | 100pF @ 16V | ±12V | - | 150mW | 850 mOhm @ 500mA, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
Vishay Siliconix |
MOSFET N-CH 600V 80A TO247AC
|
封装: TO-247-3 |
库存7,716 |
|
MOSFET (Metal Oxide) | 600V | 80A (Tc) | 10V | 4V @ 250µA | 443nC @ 10V | 6900pF @ 100V | ±30V | - | 520W (Tc) | 30 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 28A
|
封装: TO-247-3 |
库存19,776 |
|
MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 5V @ 250µA | 54nC @ 10V | 2400pF @ 100V | ±25V | - | 210W (Tc) | 110 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Diodes Incorporated |
MOSFET N-CH 20V 230MA DFN
|
封装: 3-XFDFN |
库存648,240 |
|
MOSFET (Metal Oxide) | 20V | 230mA (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | - | 14.1pF @ 15V | ±10V | - | 350mW (Ta) | 3 Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 60V SOT323
|
封装: SC-70, SOT-323 |
库存49,464 |
|
MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 5V, 10V | 2.1V @ 250µA | 0.43nC @ 4.5V | 17pF @ 10V | ±20V | - | 220mW (Ta), 1.06W (Tc) | 4.5 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
||
Rohm Semiconductor |
MOSFET N-CH 30V .1A SOT416
|
封装: SC-75, SOT-416 |
库存5,418,120 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 13pF @ 5V | ±20V | - | 150mW (Ta) | 8 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
||
STMicroelectronics |
MOSFET N-CH 650V 138A MAX247
|
封装: TO-247-3 |
库存5,872 |
|
MOSFET (Metal Oxide) | 650V | 138A (Tc) | 10V | 5V @ 250µA | 414nC @ 10V | 18500pF @ 100V | ±25V | - | 625W (Tc) | 15 mOhm @ 69A, 10V | 150°C (TJ) | Through Hole | MAX247? | TO-247-3 |
||
onsemi |
40V T10M IN S08FL PACKAGE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 111A (Tc) | 10V | 3.5V @ 60µA | 22.1 nC @ 10 V | 1421 pF @ 20 V | ±20V | - | 53W (Tc) | 2.35mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Renesas Electronics Corporation |
MOSFET N-CH 40V 75A 8HSON
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 4V @ 250µA | 87 nC @ 10 V | 5100 pF @ 25 V | ±20V | - | 1W (Ta), 138W (Tc) | 3.3mOhm @ 38A, 10V | 175°C | Surface Mount | 8-HSON (5x5.4) | 8-PowerLDFN |
||
Goford Semiconductor |
MOSFET N-CH 100V 33A TO-220F
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 33A (Tc) | 4.5V, 10V | 2.5V @ 250µA | - | - | ±20V | - | 20.8W (Tc) | 10.5mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
IceMOS Technology |
Superjunction MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 3.9V @ 250µA | 189 nC @ 10 V | 5718 pF @ 25 V | ±20V | - | 431W (Tc) | 68mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 80V 100A 8TDSON-34
|
封装: - |
库存29,100 |
|
MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.8V @ 63µA | 56 nC @ 10 V | 3860 pF @ 40 V | ±20V | - | 125W (Tc) | 4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
||
Vishay Siliconix |
POWER MOSFET SUPER-247, 100 M @
|
封装: - |
库存627 |
|
MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 5V @ 250µA | 380 nC @ 10 V | 8110 pF @ 25 V | ±30V | - | 540W (Tc) | 100mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI333
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 5A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 14 nC @ 10 V | 740 pF @ 30 V | ±20V | - | 3W (Ta) | 50mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V X2-DFN1006-
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 500mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.28 nC @ 4.5 V | 14.6 pF @ 16 V | ±8V | - | 360mW (Ta) | 990mOhm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |