图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 75A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存268,896 |
|
MOSFET (Metal Oxide) | 20V | 75A (Tc) | 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | ±20V | - | 90W (Tc) | 9.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DFN
|
封装: 8-VDFN Exposed Pad |
库存7,408 |
|
MOSFET (Metal Oxide) | 30V | 29A (Ta), 32A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 49nC @ 10V | 2010pF @ 15V | ±20V | - | 4.2W (Ta), 41W (Tc) | 3.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-VDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 50A TO-3P(L)
|
封装: TO-3PL |
库存6,496 |
|
MOSFET (Metal Oxide) | 500V | 50A (Ta) | 10V | 3.4V @ 1mA | 280nC @ 10V | 11000pF @ 10V | ±30V | - | 250W (Tc) | 95 mOhm @ 25A, 10V | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 1A PW-MINI
|
封装: TO-243AA |
库存19,800 |
|
MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 10V | 2V @ 1mA | 6.3nC @ 10V | 140pF @ 10V | ±20V | - | 500mW (Ta) | 700 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | PW-MINI | TO-243AA |
||
Diodes Incorporated |
MOSFET P-CH 50V 0.175A TO92-3
|
封装: E-Line-3 |
库存3,536 |
|
MOSFET (Metal Oxide) | 50V | 175mA (Ta) | 5V | 2V @ 1mA | - | 40pF @ 25V | ±20V | - | 625mW (Ta) | 10 Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 4.6A TO-220FP
|
封装: TO-220-3 Full Pack |
库存37,464 |
|
MOSFET (Metal Oxide) | 600V | 4.6A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 420pF @ 50V | ±25V | - | 20W (Tc) | 920 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,816 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 3.5V @ 90µA | 64nC @ 10V | 4910pF @ 50V | ±20V | - | 150W (Tc) | 6.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存72,000 |
|
MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | ±20V | - | 3.1W (Ta), 74W (Tc) | 2.2 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Sanken |
MOSFET N-CH 60V 48A TO-252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,824 |
|
MOSFET (Metal Oxide) | 60V | 48A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 53.6nC @ 10V | 3810pF @ 25V | ±20V | - | 61W (Tc) | 6.5 mOhm @ 34A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 100V POWERFLAT5X6
|
封装: 8-PowerVDFN |
库存5,584 |
|
MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 3550pF @ 50V | ±20V | - | 5W (Ta), 100W (Tc) | 10.5 mOhm @ 8A, 10V | 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET N-CH 200V 60MA SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存699,948 |
|
MOSFET (Metal Oxide) | 200V | 60mA (Ta) | 10V | 3V @ 1mA | - | 45pF @ 25V | ±20V | - | 330mW (Ta) | 25 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 30V 35A 1212-8 PPAK
|
封装: PowerPAK? 1212-8 |
库存69,324 |
|
MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 59nC @ 10V | 1800pF @ 15V | ±25V | - | 3.7W (Ta), 52W (Tc) | 12.3 mOhm @ 13.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
GeneSiC Semiconductor |
TRANS SJT 1700V 4A TO-247AB
|
封装: TO-247-3 |
库存5,216 |
|
SiC (Silicon Carbide Junction Transistor) | 1700V | 4A (Tc) (95°C) | - | - | - | - | - | - | 106W (Tc) | 480 mOhm @ 4A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
STMicroelectronics |
MOSFET P-CH 30V 10A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,184 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 33nC @ 4.5V | 3350pF @ 25V | ±20V | - | 2.7W (Ta) | 12 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microsemi Corporation |
MOSFET N-CH 500V 24A TO-247
|
封装: TO-247-3 |
库存8,196 |
|
MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 5V @ 1mA | 90nC @ 10V | 3630pF @ 25V | ±30V | - | 335W (Tc) | 240 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 100V 33.5A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存18,456 |
|
MOSFET (Metal Oxide) | 100V | 33.5A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2910pF @ 25V | ±25V | - | 3.75W (Ta), 155W (Tc) | 60 mOhm @ 16.75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 17A 8DFN
|
封装: 8-PowerWDFN |
库存28,620 |
|
MOSFET (Metal Oxide) | 150V | 5.5A (Ta), 17A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 20nC @ 10V | 675pF @ 75V | ±20V | - | 4.1W (Ta), 39W (Tc) | 54 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET N-CH 100V 1.5A SOT223
|
封装: - |
库存7,500 |
|
MOSFET (Metal Oxide) | 100 V | 1.5A (Tc) | 10V | 4V @ 250µA | 8.3 nC @ 10 V | 180 pF @ 25 V | ±20V | - | 2W (Ta), 3.1W (Tc) | 540mOhm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
onsemi |
MOSFET N-CH 80V 41A/351A 8HPSOF
|
封装: - |
库存4,899 |
|
MOSFET (Metal Oxide) | 80 V | 41A (Ta), 351A (Tc) | 10V | 4V @ 650µA | 166 nC @ 10 V | 11200 pF @ 40 V | ±20V | - | 4.2W (Ta), 311W (Tc) | 1.05mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 20A/85A 8DFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 20A (Ta), 85A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 97 nC @ 10 V | 6000 pF @ 20 V | ±20V | - | 2.3W (Ta), 83W (Tc) | 3.4mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Vishay Siliconix |
N-CHANNEL 100-V (D-S) MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 2.8A (Ta), 3.8A (Tc) | 4.5V, 10V | 3V @ 250µA | 10.4 nC @ 10 V | 196 pF @ 50 V | ±20V | - | 2W (Ta), 3.6W (Tc) | 126mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 6
|
封装: - |
库存354 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 36A (Tc) | 18V | 5V @ 4.2mA | 46 nC @ 18 V | 1530 pF @ 800 V | +25V, -10V | - | 170W (Tc) | 82mOhm @ 18A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
||
Infineon Technologies |
TRENCH <= 40V
|
封装: - |
库存29,940 |
|
MOSFET (Metal Oxide) | 15 V | 58A (Ta), 379A (Tc) | 4.5V, 7V | 2V @ 432µA | 55 nC @ 7 V | 6240 pF @ 7.5 V | ±7V | - | 2.1W (Ta), 89W (Tc) | 0.45mOhm @ 30A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TTFN-9-3 | 9-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 30V 3.2A SOT-23-6
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.2A (Ta) | - | 1V @ 250µA | 9.6 nC @ 10 V | 380 pF @ 25 V | - | - | - | 110mOhm @ 2.2A, 10V | - | Surface Mount | SOT-23-6 | SOT-23-6 |
||
Microsemi Corporation |
MOSFET N-CH 200V 9.4A TO257
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 9.4A (Tc) | 12V | 4V @ 1mA | 50 nC @ 12 V | - | ±20V | - | 2W (Ta), 75W (Tc) | 490mOhm @ 9.4A, 12V | -55°C ~ 150°C (TJ) | Through Hole | TO-257 | TO-257-3 |
||
onsemi |
T6 30V LL 2X2 WDFNW6
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 30 V | 18A (Ta), 77A (Tc) | 4.5V, 10V | 2V @ 250µA | 20 nC @ 10 V | 1350 pF @ 15 V | ±20V | - | 2.5W (Ta), 45W (Tc) | 4.2mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 6-WDFNW (2.05x2.05) | 6-PowerWDFN |
||
Taiwan Semiconductor Corporation |
600V, 24A, SINGLE N-CHANNEL POWE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 5V @ 1mA | 44 nC @ 10 V | 1857 pF @ 300 V | ±30V | - | 89W (Tc) | 165mOhm @ 11.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 22A | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |