图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 30V 9.8A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存5,456 |
|
MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 10V | 2.4V @ 25µA | 41nC @ 10V | 1270pF @ 25V | ±20V | - | 2.5W (Ta) | 17.5 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存3,840 |
|
MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 1.8V @ 50µA | 2.67nC @ 10V | 69pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET N-CH 800V 17A TO-268(D3)
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,296 |
|
MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 4.5V @ 4mA | 95nC @ 10V | 3600pF @ 25V | ±20V | - | 400W (Tc) | 600 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
NXP |
MOSFET N-CH 55V 75A TO220AB
|
封装: TO-220-3 |
库存3,200 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 85.6nC @ 10V | 5082pF @ 25V | ±20V | - | 300W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 650V TO247
|
封装: TO-247-3 |
库存6,912 |
|
MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | ±20V | - | 195.3W (Tc) | 150 mOhm @ 9.3A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 1200V 12A TO-247
|
封装: TO-247-3 |
库存2,000 |
|
MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 5V @ 4mA | 95nC @ 10V | 3400pF @ 25V | ±30V | - | 500W (Tc) | 1.4 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 7A TO220F
|
封装: TO-220-3 Full Pack |
库存2,720 |
|
MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 250µA | 9.2nC @ 10V | 434pF @ 100V | ±30V | - | 35W (Tc) | 650 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET P-CH 30V 5A CPH6
|
封装: - |
库存4,560 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 500V 30A TO-268
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,108 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 6.5V @ 4mA | 62nC @ 10V | 3200pF @ 25V | ±20V | - | 690W (Tc) | 200 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Infineon Technologies |
MOSFET N-CH 100V 80A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存21,336 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 3.5V @ 75µA | 55nC @ 10V | 3980pF @ 50V | ±20V | - | 125W (Tc) | 8.6 mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Microsemi Corporation |
MOSFET N-CH 600V 47A TO-247
|
封装: TO-247-3 |
库存60,036 |
|
MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 3.9V @ 2.7mA | 260nC @ 10V | 7015pF @ 25V | ±20V | - | 417W (Tc) | 70 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
IXYS |
MOSFET P-CH 100V 52A TO-220
|
封装: TO-220-3 |
库存4,576 |
|
MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 4.5V @ 250µA | 60nC @ 10V | 2845pF @ 25V | ±20V | - | 300W (Tc) | 50 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 1000V 800MA D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,656 |
|
MOSFET (Metal Oxide) | 1000V | 800mA (Tc) | - | - | 14.6nC @ 5V | 325pF @ 25V | ±20V | Depletion Mode | 60W (Tc) | 21 Ohm @ 400mA, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 75V 80A TO-220
|
封装: TO-220-3 |
库存402,072 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 3700pF @ 25V | ±20V | - | 300W (Tc) | 11 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Central Semiconductor Corp |
MOSFET N-CH 20V 0.1A SOT883
|
封装: SC-101, SOT-883 |
库存90,402 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 900mV @ 250µA | 0.57nC @ 4.5V | 9pF @ 3V | 10V | - | 100mW (Ta) | 3 Ohm @ 10mA, 4V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |
||
Infineon Technologies |
MOSFET N-CH
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET P-CH 30V 12.6A 8SOIC
|
封装: - |
库存7,881 |
|
MOSFET (Metal Oxide) | 30 V | 12.6A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 42 nC @ 10 V | 1500 pF @ 15 V | ±20V | - | 4.8W (Tc) | 19mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
MOSFET N-CH 60V 250A SO8FL
|
封装: - |
Request a Quote |
|
- | - | 35A (Ta), 250A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 60V 28A/150A 5DFN
|
封装: - |
库存4,500 |
|
MOSFET (Metal Oxide) | 60 V | 28A (Ta), 150A (Tc) | 10V | 4V @ 135µA | 34 nC @ 10 V | 2630 pF @ 30 V | ±20V | - | 3.7W (Ta), 110W (Tc) | 3mOhm @ 27A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Qorvo |
750V/11MOHM, N-OFF SIC STACK CAS
|
封装: - |
Request a Quote |
|
SiCFET (Cascode SiCJFET) | 750 V | 104A (Tc) | 12V | 5.5V @ 10mA | 75 nC @ 15 V | 3245 pF @ 400 V | ±20V | - | 357W (Tc) | 14.2mOhm @ 60A, 12V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Goford Semiconductor |
MOSFET N-CH 650V 80A TO-247
|
封装: - |
库存90 |
|
MOSFET (Metal Oxide) | - | 80A (Tc) | 10V | 5V @ 250µA | 240 nC @ 10 V | 9500 pF @ 400 V | ±30V | - | - | 30mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-247-3 | - |
||
MOSLEADER |
P -30V SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET_(20V 40V)
|
封装: - |
库存3,300 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Nexperia USA Inc. |
PSMN2R8-40YSB/SOT669/LFPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 160A (Ta) | 10V | 3.6V @ 1mA | 59 nC @ 10 V | 4563 pF @ 20 V | ±20V | Schottky Diode (Body) | 147W (Ta) | 2.8mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Infineon Technologies |
MOSFET P-CH 60V 6.5A TO252-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 6.5A (Tc) | 4.5V, 10V | 2V @ 270µA | 13.8 nC @ 10 V | 420 pF @ 30 V | ±20V | - | 28W (Tc) | 250mOhm @ 6.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 600V 72A TO247
|
封装: - |
库存1,089 |
|
MOSFET (Metal Oxide) | 600 V | 72A (Tc) | - | - | - | - | ±25V | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
||
Rohm Semiconductor |
PCH -45V -7A POWER MOSFET. RSS07
|
封装: - |
库存13,809 |
|
MOSFET (Metal Oxide) | 45 V | 7A (Ta) | 4V, 10V | 2.5V @ 1mA | 47.6 nC @ 5 V | 4100 pF @ 10 V | ±20V | - | 2W (Ta) | 27mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 150 V (D-S)
|
封装: - |
库存94,689 |
|
MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 3.5V @ 250µA | 12 nC @ 10 V | 540 pF @ 25 V | ±20V | - | 62.5W (Tc) | 68.5mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8W | PowerPAK® 1212-8W |