页 40 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  40/1,502
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封装
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SI2302ADS-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 2.1A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存968,124
MOSFET (Metal Oxide)
20V
2.1A (Ta)
2.5V, 4.5V
1.2V @ 50µA
10nC @ 4.5V
300pF @ 10V
±8V
-
700mW (Ta)
60 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PHP14NQ20T,127
NXP

MOSFET N-CH 200V 14A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,136
MOSFET (Metal Oxide)
200V
14A (Tc)
10V
4V @ 1mA
38nC @ 10V
1500pF @ 25V
±20V
-
125W (Tc)
230 mOhm @ 7A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FQA22P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 24A TO-3P

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存110,064
MOSFET (Metal Oxide)
100V
24A (Tc)
10V
4V @ 250µA
50nC @ 10V
1500pF @ 25V
±30V
-
150W (Tc)
125 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot NTP45N06L
ON Semiconductor

MOSFET N-CH 60V 45A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存450,420
MOSFET (Metal Oxide)
60V
45A (Ta)
5V
2V @ 250µA
32nC @ 5V
1700pF @ 25V
±15V
-
2.4W (Ta), 125W (Tj)
28 mOhm @ 22.5A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRFBG30
Vishay Siliconix

MOSFET N-CH 1000V 3.1A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存18,672
MOSFET (Metal Oxide)
1000V
3.1A (Tc)
10V
4V @ 250µA
80nC @ 10V
980pF @ 25V
±20V
-
125W (Tc)
5 Ohm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXFT30N60Q
IXYS

MOSFET N-CH 600V 30A TO-268(D3)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存7,360
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
4.5V @ 4mA
125nC @ 10V
4700pF @ 25V
±20V
-
500W (Tc)
230 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
BUK663R7-75C,118
Nexperia USA Inc.

MOSFET N-CH 75V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,232
MOSFET (Metal Oxide)
75V
120A (Tc)
4.5V, 10V
2.8V @ 1mA
234nC @ 10V
15450pF @ 25V
±16V
-
306W (Tc)
4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TPC6113(TE85L,F,M)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A VS6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-6 (2.9x2.8)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: SOT-23-6 Thin, TSOT-23-6
库存2,496
MOSFET (Metal Oxide)
20V
5A (Ta)
2.5V, 4.5V
1.2V @ 200µA
10nC @ 5V
690pF @ 10V
±12V
-
700mW (Ta)
55 mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
VS-6 (2.9x2.8)
SOT-23-6 Thin, TSOT-23-6
DMP2008UFG-13
Diodes Incorporated

MOSFET P-CH 20V 14A POWERDI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6909pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerWDFN
封装: 8-PowerWDFN
库存4,576
MOSFET (Metal Oxide)
20V
14A (Ta), 54A (Tc)
1.5V, 4.5V
1V @ 250µA
72nC @ 4.5V
6909pF @ 10V
±8V
-
2.4W (Ta), 41W (Tc)
8 mOhm @ 12A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerWDFN
hot NTLUS3A18PZTCG
ON Semiconductor

MOSFET P-CH 20V 8.2A UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (2x2)
  • Package / Case: 6-UDFN Exposed Pad
封装: 6-UDFN Exposed Pad
库存44,652
MOSFET (Metal Oxide)
20V
5.1A (Ta)
1.5V, 4.5V
1V @ 250µA
28nC @ 4.5V
2240pF @ 15V
±8V
-
700mW (Ta)
18 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (2x2)
6-UDFN Exposed Pad
STU13NM60N
STMicroelectronics

MOSFET N-CH 600V 11A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存4,384
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
4V @ 250µA
27nC @ 10V
790pF @ 50V
±25V
-
90W (Tc)
360 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot IRFI840GPBF
Vishay Siliconix

MOSFET N-CH 500V 4.6A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封装: TO-220-3 Full Pack, Isolated Tab
库存66,240
MOSFET (Metal Oxide)
500V
4.6A (Tc)
10V
4V @ 250µA
67nC @ 10V
1300pF @ 25V
±20V
-
40W (Tc)
850 mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
AUIRLL014NTR
Infineon Technologies

MOSFET N-CH 55V 2A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存2,896
MOSFET (Metal Oxide)
55V
2A (Ta)
4V, 10V
2V @ 250µA
14nC @ 10V
230pF @ 25V
±16V
-
1W (Ta)
140 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SIHS36N50D-E3
Vishay Siliconix

MOSFET N-CH 500V 36A SUPER-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SUPER-247 (TO-274AA)
  • Package / Case: TO-247-3
封装: TO-247-3
库存11,760
MOSFET (Metal Oxide)
500V
36A (Tc)
10V
5V @ 250µA
125nC @ 10V
3233pF @ 100V
±30V
-
446W (Tc)
130 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
SUPER-247 (TO-274AA)
TO-247-3
hot SI3424CDV-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 7.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: SOT-23-6 Thin, TSOT-23-6
库存216,948
MOSFET (Metal Oxide)
30V
8A (Tc)
4.5V, 10V
2.5V @ 250µA
12.5nC @ 10V
405pF @ 15V
±20V
-
2W (Ta), 3.6W (Tc)
26 mOhm @ 7.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
BSC0805LSATMA1
Infineon Technologies

MOSFET N-CH 100V 79A TDSON-8-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 49µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-6
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
79A (Tc)
4.5V, 10V
2.3V @ 49µA
20 nC @ 4.5 V
2700 pF @ 50 V
±20V
-
83W (Tc)
7mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
PSMN1R4-40YLD-2X
Nexperia USA Inc.

PSMN1R4-40YLD/SOT669/LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 238W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封装: -
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MOSFET (Metal Oxide)
40 V
240A (Ta)
4.5V, 10V
2.2V @ 1mA
143 nC @ 10 V
6661 pF @ 20 V
±20V
-
238W (Ta)
1.4mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
IAUC70N08S5N074ATMA1
Infineon Technologies

MOSFET N-CH 80V 70A 8TDSON-33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 36µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-33
  • Package / Case: 8-PowerTDFN
封装: -
库存20,775
MOSFET (Metal Oxide)
80 V
70A (Tc)
6V, 10V
3.8V @ 36µA
30 nC @ 10 V
2080 pF @ 40 V
±20V
-
83W (Tc)
7.4mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
DMTH10H015SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
100 V
56A (Tc)
6V, 10V
4V @ 250µA
30.1 nC @ 10 V
2343 pF @ 50 V
±20V
-
2.7W (Ta), 94W (Tc)
14.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMP2045U-13
Diodes Incorporated

MOSFET P-CH 20V 4.3A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存50,145
MOSFET (Metal Oxide)
20 V
4.3A (Ta)
1.8V, 4.5V
1V @ 250µA
6.8 nC @ 4.5 V
634 pF @ 10 V
±8V
-
800mW (Ta)
45mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SIHH080N60E-T1-GE3
Vishay Siliconix

E SERIES POWER MOSFET POWERPAK 8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 184W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerTDFN
封装: -
库存9,366
MOSFET (Metal Oxide)
600 V
32A (Tc)
10V
5V @ 250µA
63 nC @ 10 V
2557 pF @ 100 V
±30V
-
184W (Tc)
80mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerTDFN
DMTH10H010SPS-13
Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封装: -
库存29,655
MOSFET (Metal Oxide)
100 V
11.8A (Ta), 123A (Tc)
6V, 10V
4V @ 250µA
56.4 nC @ 10 V
4468 pF @ 50 V
±20V
-
1.5W (Ta)
8.8mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
MTP1306
onsemi

POWER FIELD-EFFECT TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3584 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: -
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MOSFET (Metal Oxide)
30 V
75A (Tc)
5V, 10V
2V @ 250µA
70 nC @ 5 V
3584 pF @ 25 V
±20V
-
150W (Tc)
6.5mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
NVTFS5C460NLTAG
onsemi

MOSFET N-CH 40V 19A/74A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: -
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MOSFET (Metal Oxide)
40 V
19A (Ta), 74A (Tc)
4.5V, 10V
2V @ 40µA
11 nC @ 10 V
1300 pF @ 25 V
±20V
-
3.1W (Ta), 50W (Tc)
4.8mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
ISC110N12NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSO8
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
120 V
11A (Ta), 62A (Tc)
8V, 10V
3.6V @ 35µA
19.3 nC @ 10 V
1400 pF @ 60 V
±20V
-
3W (Ta), 94W (Tc)
11mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SuperSO8
8-PowerTDFN
2N7002-TP-HF
Micro Commercial Co

Interface

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.08W
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
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MOSFET (Metal Oxide)
60 V
340mA (Ta)
4.5V, 10V
2.5V @ 250µA
1.7 nC @ 10 V
35 pF @ 25 V
±20V
-
1.08W
2.5Ohm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SQ2361CES-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 2.8A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
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MOSFET (Metal Oxide)
60 V
2.8A (Tc)
4.5V, 10V
2.5V @ 250µA
12 nC @ 10 V
550 pF @ 30 V
±20V
-
2W (Tc)
177mOhm @ 2.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
BSS308PEH6327XTSA1-ML
MOSLEADER

P -30V SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
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