页 500 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 26,766
页  500/893
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零件编号
制造商
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封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPP15P10PGHKSA1
Infineon Technologies

MOSFET P-CH 100V 15A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,392
MOSFET (Metal Oxide)
100V
15A (Tc)
10V
2.1V @ 1.54mA
48nC @ 10V
1280pF @ 25V
±20V
-
128W (Tc)
240 mOhm @ 10.6A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IRFR12N25DCTRRP
Infineon Technologies

MOSFET N-CH 250V 14A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 144W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,632
MOSFET (Metal Oxide)
250V
14A (Tc)
10V
5V @ 250µA
35nC @ 10V
810pF @ 25V
±30V
-
144W (Tc)
260 mOhm @ 8.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF8010SPBF
Infineon Technologies

MOSFET N-CH 100V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 260W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存14,568
MOSFET (Metal Oxide)
100V
80A (Tc)
10V
4V @ 250µA
120nC @ 10V
3830pF @ 25V
±20V
-
260W (Tc)
15 mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFR3711Z
Infineon Technologies

MOSFET N-CH 20V 93A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存12,936
MOSFET (Metal Oxide)
20V
93A (Tc)
4.5V, 10V
2.45V @ 250µA
27nC @ 4.5V
2160pF @ 10V
±20V
-
79W (Tc)
5.7 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IPB14N03LA
Infineon Technologies

MOSFET N-CH 25V 30A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存55,680
MOSFET (Metal Oxide)
25V
30A (Tc)
4.5V, 10V
2V @ 20µA
8.3nC @ 5V
1043pF @ 15V
±20V
-
46W (Tc)
13.6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN012-25YLC,115
NXP

MOSFET N-CH 25V 33A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封装: SC-100, SOT-669
库存6,288
MOSFET (Metal Oxide)
25V
33A (Tc)
4.5V, 10V
1.95V @ 1mA
8.3nC @ 10V
528pF @ 12V
±20V
-
26W (Tc)
12.6 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
VN2410LZL1G
ON Semiconductor

MOSFET N-CH 240V 200MA TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Tc)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存3,456
MOSFET (Metal Oxide)
240V
200mA (Ta)
2.5V, 10V
2V @ 1mA
-
125pF @ 25V
±20V
-
350mW (Tc)
10 Ohm @ 500mA, 10V
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FCP7N60_F080
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存4,048
MOSFET (Metal Oxide)
600V
7A (Tc)
10V
5V @ 250µA
30nC @ 10V
920pF @ 25V
±30V
-
83W (Tc)
600 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
NTB13N10
ON Semiconductor

MOSFET N-CH 100V 13A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 64.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,248
MOSFET (Metal Oxide)
100V
13A (Ta)
10V
4V @ 250µA
20nC @ 10V
550pF @ 25V
±20V
-
64.7W (Ta)
165 mOhm @ 6.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot HUF75329D3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存162,660
MOSFET (Metal Oxide)
55V
20A (Tc)
10V
4V @ 250µA
65nC @ 20V
1060pF @ 25V
±20V
-
128W (Tc)
26 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR110TRRPBF
Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,224
MOSFET (Metal Oxide)
100V
4.3A (Tc)
10V
4V @ 250µA
8.3nC @ 10V
180pF @ 25V
±20V
-
2.5W (Ta), 25W (Tc)
540 mOhm @ 2.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STP95N2LH5
STMicroelectronics

MOSFET N-CH 25V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 25V
  • Vgs (Max): ±22V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存5,088
MOSFET (Metal Oxide)
25V
80A (Tc)
5V, 10V
1V @ 250µA
13.4nC @ 5V
1817pF @ 25V
±22V
-
80W (Tc)
4.9 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
STB30NM50N
STMicroelectronics

MOSFET N-CH 500V 27A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,584
MOSFET (Metal Oxide)
500V
27A (Tc)
10V
4V @ 250µA
94nC @ 10V
2740pF @ 50V
±25V
-
190W (Tc)
115 mOhm @ 13.5A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STB80NE03L-06T4
STMicroelectronics

MOSFET N-CH 30V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存60,012
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2.5V @ 250µA
130nC @ 5V
6500pF @ 25V
±20V
-
150W (Tc)
6 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFT13N80Q
IXYS

MOSFET N-CH 800V 13A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存3,312
MOSFET (Metal Oxide)
800V
13A (Tc)
10V
4.5V @ 4mA
90nC @ 10V
3250pF @ 25V
±20V
-
250W (Tc)
700 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IRF644STRLPBF
Vishay Siliconix

MOSFET N-CH 250V 14A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,448
MOSFET (Metal Oxide)
250V
14A (Tc)
10V
4V @ 250µA
68nC @ 10V
1300pF @ 25V
±20V
-
3.1W (Ta), 125W (Tc)
280 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot AOTF10N50FD
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 10A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存10,488
MOSFET (Metal Oxide)
500V
10A (Tc)
10V
4.2V @ 250µA
35nC @ 10V
1240pF @ 25V
±30V
-
50W (Tc)
750 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3F
TO-220-3 Full Pack
SVD5803NT4G
ON Semiconductor

MOSFET N-CH 40V 85A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,496
MOSFET (Metal Oxide)
40V
85A (Tc)
5V, 10V
3.5V @ 250µA
51nC @ 10V
3220pF @ 25V
±20V
-
83W (Tc)
5.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IPA105N15N3 G
Infineon Technologies

MOSFET N-CH 150V 37A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 160µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存390,000
MOSFET (Metal Oxide)
150V
37A (Tc)
8V, 10V
4V @ 160µA
55nC @ 10V
4300pF @ 75V
±20V
-
40.5W (Tc)
10.5 mOhm @ 37A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IPP072N10N3GXKSA1
Infineon Technologies

MOSFET N-CH 100V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存15,552
MOSFET (Metal Oxide)
100V
80A (Tc)
6V, 10V
3.5V @ 90µA
68nC @ 10V
4910pF @ 50V
±20V
-
150W (Tc)
7.2 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
BSZ110N08NS5ATMA1
Infineon Technologies

MOSFET N-CH 80V 40A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存5,632
MOSFET (Metal Oxide)
80V
40A (Tc)
6V, 10V
3.8V @ 22µA
18.5nC @ 10V
1300pF @ 40V
±20V
-
50W (Tc)
11 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
BSP318SH6327XTSA1
Infineon Technologies

MOSFET N-CH 60V 2.6A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存19,476
MOSFET (Metal Oxide)
60V
2.6A (Tj)
4.5V, 10V
2V @ 20µA
20nC @ 10V
380pF @ 25V
±20V
-
1.8W (Ta)
90 mOhm @ 2.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
FDMC8321LDC
Fairchild/ON Semiconductor

MOSFET N-CH 40V 27A POWER33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool ? 33
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存7,024
MOSFET (Metal Oxide)
40V
27A (Ta), 108A (Tc)
4.5V, 10V
3V @ 250µA
60nC @ 10V
3965pF @ 20V
±20V
-
2.9W (Ta), 56W (Tc)
2.5 mOhm @ 27A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool ? 33
8-PowerTDFN
SQJA84EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 80V 46A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存23,340
MOSFET (Metal Oxide)
80V
46A (Tc)
4.5V, 10V
2.5V @ 250µA
35nC @ 10V
2100pF @ 25V
±20V
-
55W (Tc)
12.5 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
STFI9N80K5
STMicroelectronics

MOSFET N-CH 800V 7A I2PAKFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: -
  • Package / Case: TO-262-3 Full Pack, I2Pak
封装: TO-262-3 Full Pack, I2Pak
库存16,956
MOSFET (Metal Oxide)
800V
7A (Tc)
10V
5V @ 100µA
12nC @ 10V
340pF @ 100V
±30V
-
25W (Tc)
900 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
-
TO-262-3 Full Pack, I2Pak
hot FDS6670A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 13A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存532,356
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V, 10V
3V @ 250µA
30nC @ 5V
2220pF @ 15V
±20V
-
2.5W (Ta)
8 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot DMP2004K-7
Diodes Incorporated

MOSFET P-CH 20V 600MA SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 550mW (Ta)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存1,200,960
MOSFET (Metal Oxide)
20V
600mA (Ta)
1.8V, 4.5V
1V @ 250µA
-
175pF @ 16V
±8V
-
550mW (Ta)
900 mOhm @ 430mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot IRF540PBF
Vishay Siliconix

MOSFET N-CH 100V 28A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存5,792
MOSFET (Metal Oxide)
100V
28A (Tc)
10V
4V @ 250µA
72nC @ 10V
1700pF @ 25V
±20V
-
150W (Tc)
77 mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FDD4141
Fairchild/ON Semiconductor

MOSFET P-CH 40V 10.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2775pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 12.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存212,184
MOSFET (Metal Oxide)
40V
10.8A (Ta), 50A (Tc)
4.5V, 10V
3V @ 250µA
50nC @ 10V
2775pF @ 20V
±20V
-
2.4W (Ta), 69W (Tc)
12.3 mOhm @ 12.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot AO6404
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 8.6A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
封装: SC-74, SOT-457
库存465,072
MOSFET (Metal Oxide)
20V
8.6A (Ta)
1.8V, 10V
1V @ 250µA
17.9nC @ 4.5V
1810pF @ 10V
±12V
-
2W (Ta)
17 mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457