图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 200MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存3,648 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.3V @ 26µA | 1.5nC @ 10V | 56pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO220F
|
封装: TO-220-3 Full Pack |
库存5,120 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 2333pF @ 100V | ±30V | - | 50W (Tc) | 400 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V 8DFN
|
封装: 8-VDFN Exposed Pad |
库存2,112 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-VDFN Exposed Pad |
||
ON Semiconductor |
MOSFET N-CH 24V 12.5A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存71,640 |
|
MOSFET (Metal Oxide) | 24V | 12.5A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | ±20V | - | 1.5W (Ta), 110W (Tc) | 4.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 31A TO-220
|
封装: TO-220-3 |
库存103,464 |
|
MOSFET (Metal Oxide) | 200V | 31A (Tc) | 5V, 10V | 2V @ 250µA | 72nC @ 5V | 3900pF @ 25V | ±20V | - | 180W (Tc) | 75 mOhm @ 15.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 2.5A TO-220F
|
封装: TO-220-3 Full Pack |
库存1,976,604 |
|
MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 1100pF @ 25V | ±30V | - | 47W (Tc) | 3.3 Ohm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 8.7A TO-220F
|
封装: TO-220-3 Full Pack |
库存7,376 |
|
MOSFET (Metal Oxide) | 100V | 8.7A (Tc) | 5V, 10V | 4V @ 250µA | 12nC @ 5V | 520pF @ 25V | ±20V | - | 30W (Tc) | 180 mOhm @ 4.35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 7.8A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存378,480 |
|
MOSFET (Metal Oxide) | 20V | 7.8A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 55nC @ 4.5V | 1730pF @ 10V | ±8V | - | 2.5W (Ta) | 24 mOhm @ 7.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 900V 5.8A TO-220
|
封装: TO-220-3 |
库存55,620 |
|
MOSFET (Metal Oxide) | 900V | 5.8A (Tc) | 10V | 5V @ 250µA | 55nC @ 10V | 1400pF @ 25V | ±30V | - | 135W (Tc) | 2 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET IFX OPTIMOS TO247
|
封装: TO-247-3 |
库存2,608 |
|
MOSFET (Metal Oxide) | 250V | 96A (Tc) | 10V | 4V @ 270µA | 203nC @ 10V | 9915pF @ 50V | ±20V | - | 313W (Tc) | 12 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 60A POLARPAK
|
封装: 10-PolarPAK? (L) |
库存5,728 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | ±20V | - | 5.2W (Ta), 125W (Tc) | 6.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (L) | 10-PolarPAK? (L) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V TO-220-3
|
封装: TO-220-3 Full Pack |
库存6,024 |
|
MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 3.5V @ 250µA | 40nC @ 10V | 1665pF @ 25V | ±20V | - | 31W (Tc) | 380 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,328 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | ±20V | - | 94W (Tc) | 3.1 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 600V 70A TO-247AC
|
封装: TO-247-3 |
库存8,412 |
|
MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 4V @ 250µA | 380nC @ 10V | 7500pF @ 100V | ±30V | - | 520W (Tc) | 38 mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 650V 10A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存20,076 |
|
MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 590pF @ 100V | ±25V | - | 110W (Tc) | 430 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 200V 17A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存195,480 |
|
MOSFET (Metal Oxide) | 200V | 17A (Tc) | 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | ±30V | - | 3W (Ta), 140W (Tc) | 165 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 800V 4.3A IPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 4V @ 250µA | 32 nC @ 10 V | 622 pF @ 100 V | ±30V | - | 69W (Tc) | 1.27Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4V @ 250µA | 205 nC @ 20 V | 3000 pF @ 25 V | ±20V | - | 270W (Tc) | 9mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 1200V 1A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1200 V | 1A (Tc) | 10V | 4.5V @ 50µA | 17.6 nC @ 10 V | 550 pF @ 25 V | ±20V | - | 63W (Tc) | 20Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET N-CH 50V 5.2A 8SO T&R 2
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 5.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 14.5 nC @ 10 V | 836 pF @ 30 V | ±20V | - | 1.3W (Ta) | 40mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
MOSFET P-CH 100V 33.5A D2PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 33.5A (Tc) | 10V | 4V @ 250µA | 110 nC @ 10 V | 2910 pF @ 25 V | ±25V | - | 3.75W (Ta), 155W (Tc) | 60mOhm @ 16.75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 120A LFPAK56
|
封装: - |
库存13,821 |
|
MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 10V | 3.6V @ 1mA | 59 nC @ 10 V | 5449 pF @ 25 V | +20V, -10V | - | 172W (Ta) | 3mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Goford Semiconductor |
MOSFET N-CH 100V 3.5A SOT-23-3L
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | - | 3.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 5 nC @ 10 V | 209 pF @ 50 V | ±20V | - | - | 80mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | - |
||
STMicroelectronics |
MOSFET N-CH 600V 63A TO247
|
封装: - |
库存9 |
|
MOSFET (Metal Oxide) | 600 V | 63A (Tc) | 10V | 4.75V @ 250µA | 106 nC @ 10 V | 4360 pF @ 100 V | ±25V | - | 390W (Tc) | 41mOhm @ 31.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
||
Infineon Technologies |
25V, N-CH MOSFET, LOGIC LEVEL, P
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 9.1 nC @ 10 V | 670 pF @ 12 V | ±20V | - | 26W (Tc) | 8.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-25 | 8-PowerTDFN |
||
onsemi |
T6-40V N 0.7 MOHMS SL
|
封装: - |
库存4,500 |
|
MOSFET (Metal Oxide) | 40 V | 53A (Ta), 378A (Tc) | 10V | 4V @ 250µA | 128 nC @ 10 V | 8400 pF @ 25 V | ±20V | - | 3.9W (Ta), 200W (Tc) | 0.70mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) | 8-PowerTDFN, 5 Leads |
||
Sanyo |
N-CHANNEL SILICON MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
IAUC100N04S6L020ATMA1
|
封装: - |
库存47,766 |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2V @ 32µA | 46 nC @ 10 V | 2744 pF @ 25 V | ±16V | - | 75W (Tc) | 2.04mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 650V 24A D2PAK-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 5V @ 540µA | 43 nC @ 10 V | 1985 pF @ 400 V | ±30V | - | 192W (Tc) | 150mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
N-CHANNEL 800V
|
封装: - |
库存2,628 |
|
MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 4V @ 250µA | 88 nC @ 10 V | 1670 pF @ 100 V | ±30V | - | 179W (Tc) | 440mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |