图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3
|
封装: TO-220-3 |
库存4,672 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | ±20V | - | 250W (Tc) | 6.6 mOhm @ 68A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,608 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 6130pF @ 25V | ±20V | - | 300W (Tc) | 7.1 mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 50A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,272 |
|
MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 20µA | 13nC @ 5V | 1642pF @ 15V | ±20V | - | 63W (Tc) | 8.6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 75A 8DFN
|
封装: 8-PowerWDFN |
库存5,456 |
|
MOSFET (Metal Oxide) | 30V | 36A (Ta), 75A (Tc) | 4.5V, 10V | 2V @ 250µA | 100nC @ 10V | 5200pF @ 15V | ±12V | - | 4.2W (Ta), 34W (Tc) | 1.85 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET P-CH 20V 350MA SC89-3
|
封装: SC-89, SOT-490 |
库存1,161,840 |
|
MOSFET (Metal Oxide) | 20V | 350mA (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 1.5nC @ 4.5V | - | ±6V | - | 250mW (Ta) | 1.2 Ohm @ 350mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
||
IXYS |
MOSFET N-CH 55V 90A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,528 |
|
MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 4V @ 50µA | 61nC @ 10V | 2500pF @ 25V | ±20V | - | 176W (Tc) | 8.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 56A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存39,852 |
|
MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | ±20V | - | 200W (Tc) | 25 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 25V 9.7A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存60,624 |
|
MOSFET (Metal Oxide) | 25V | 9.7A (Ta), 75A (Tc) | 4.5V, 10V | 2V @ 250µA | 13.2nC @ 10V | 1333pF @ 20V | ±20V | - | 1.25W (Ta), 74.4W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 1200V 600MA TO-220
|
封装: TO-220-3 |
库存30,000 |
|
MOSFET (Metal Oxide) | 1200V | 600mA (Tc) | 10V | 4.5V @ 50µA | 13.3nC @ 10V | 270pF @ 25V | ±20V | - | 42W (Tc) | 32 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 80V 34A SOP
|
封装: 8-PowerVDFN |
库存5,488 |
|
MOSFET (Metal Oxide) | 80V | 34A (Tc) | 10V | 4V @ 500µA | 35nC @ 10V | 3000pF @ 40V | ±20V | - | 1.6W (Ta), 61W (Tc) | 8 mOhm @ 17A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 24V 100A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,152 |
|
- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 12V 3A SCH6
|
封装: SOT-563, SOT-666 |
库存2,432 |
|
MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.5V, 4.5V | 1.3V @ 1mA | 5.6nC @ 4.5V | 405pF @ 6V | ±10V | - | 1W (Ta) | 84 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
||
STMicroelectronics |
MOSFET N-CH 40V H2PAK-2
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,688 |
|
MOSFET (Metal Oxide) | 40V | 200A (Tc) | 10V | 4.5V @ 250µA | 141nC @ 10V | 11500pF @ 25V | ±20V | - | 365W (Tc) | 1.1 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
PSMN6R0-25YLD/LFPAK/REEL 7 Q1
|
封装: SC-100, SOT-669 |
库存4,432 |
|
MOSFET (Metal Oxide) | 25V | 61A | 4.5V, 10V | 2.2V @ 1mA | 10.5nC @ 10V | 705pF @ 12V | ±20V | Schottky Diode (Body) | 43W (Tc) | 6.75 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Vishay Siliconix |
MOSFET P-CH 30V 3.1A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存969,180 |
|
MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 10V | 3V @ 250µA | 21nC @ 10V | 540pF @ 15V | ±20V | - | 750mW (Ta) | 53 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Microchip Technology |
MOSFET P-CH 500V 0.054A TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存13,164 |
|
MOSFET (Metal Oxide) | 500V | 54mA (Tj) | 5V, 10V | 4.5V @ 1mA | - | 70pF @ 25V | ±20V | - | 1W (Tc) | 125 Ohm @ 10mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
STMicroelectronics |
MOSFET N-CH 40V 80A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存713,868 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 2200pF @ 25V | ±20V | - | 110W (Tc) | 6.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 30V 0.15A
|
封装: SC-70, SOT-323 |
库存1,803,576 |
|
MOSFET (Metal Oxide) | 30V | 150mA (Ta) | 1.5V, 4V | 1.3V @ 100µA | 1.58nC @ 10V | 7pF @ 10V | ±10V | - | 150mW (Ta) | 3.7 Ohm @ 80mA, 4V | 150°C (TJ) | Surface Mount | SC-70 / MCPH3 | SC-70, SOT-323 |
||
Infineon Technologies |
MOSFET N-CH 80V 80A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存51,690 |
|
MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 3.5V @ 73µA | 56nC @ 10V | 3840pF @ 40V | ±20V | - | 136W (Tc) | 6.7 mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247
|
封装: TO-247-3 |
库存7,472 |
|
MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 4.1A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存2,549,424 |
|
MOSFET (Metal Oxide) | 20V | 4.1A (Ta) | 2.5V, 4.5V | 1.1V @ 5µA | 3.5nC @ 4.5V | 290pF @ 16V | ±12V | - | 1.3W (Ta) | 46 mOhm @ 4.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 30V 80A TO-220
|
封装: TO-220-3 |
库存122,916 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 5V, 10V | 2.5V @ 250µA | 14nC @ 5V | 1850pF @ 25V | ±22V | - | 70W (Tc) | 5.4 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET_(120V 300V)
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 120 V | 35A (Tc) | 4.5V, 10V | 2.4V @ 39µA | 39 nC @ 10 V | 2691 pF @ 25 V | ±20V | - | 71W (Tc) | 24mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1200V 1A TO252
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1200 V | 1A (Tc) | 10V | 4.5V @ 50µA | 17.6 nC @ 10 V | 445 pF @ 25 V | ±30V | - | 63W (Tc) | 20Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Comchip Technology |
MOSFET N-CH 40V 35A 8DFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19.7 nC @ 10 V | 1220 pF @ 25 V | ±20V | - | 2W (Ta), 44W (Tc) | 9mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (SPR-PAK ) (3.3x3.3) | 8-PowerWDFN |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 0V, 10V | 1V @ 108µA | 5.7 nC @ 5 V | 108 pF @ 25 V | ±20V | Depletion Mode | 1.8W (Ta) | 6Ohm @ 350mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4-21 | TO-261-4, TO-261AA |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V SOT523 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 350mA (Ta) | 2.5V, 10V | 1.5V @ 250µA | 1.4 nC @ 10 V | 46 pF @ 25 V | ±20V | - | 300mW (Ta) | 1.6Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 6.1A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 24.1 nC @ 10 V | 1293 pF @ 30 V | ±20V | - | 3.2W | 50mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 78 nC @ 10 V | 2700 pF @ 25 V | ±16V | - | 200W (Tc) | 7.5mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2PAK, TO-262AA |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 120 V | 20A (Ta), 170A (Tc) | 3.3V, 10V | 2.2V @ 110µA | 82 nC @ 10 V | 5700 pF @ 60 V | ±20V | - | 3W (Ta), 211W (Tc) | 3.2mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |