晶体管 - UGBT，MOSFET - 单

IRGP4263D1PBF

Infineon Technologies

IGBT 600V TO247 COPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 192A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
• Power - Max: 325W
• Switching Energy: 2.9mJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 145nC
• Td (on/off) @ 25°C: 70ns/140ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

IRG7PG35U-EPBF

Infineon Technologies

IGBT 1000V 55A 210W TO247AD

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
• Power - Max: 210W
• Switching Energy: 1.06mJ (on), 620µJ (off)
• Input Type: Standard
• Gate Charge: 85nC
• Td (on/off) @ 25°C: 30ns/160ns
• Test Condition: 600V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封装: TO-247-3

IRGP4630D-EPBF

Infineon Technologies

IGBT 600V 47A 206W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 47A
• Current - Collector Pulsed (Icm): 54A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
• Power - Max: 206W
• Switching Energy: 95µJ (on), 350µJ (off)
• Input Type: Standard
• Gate Charge: 35nC
• Td (on/off) @ 25°C: 40ns/105ns
• Test Condition: 400V, 18A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封装: TO-247-3

IRGP4266D-EPBF

Infineon Technologies

IGBT 650V 140A 455W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 140A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 455W
• Switching Energy: 2.5mJ (on), 2.2mJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 50ns/200ns
• Test Condition: 400V, 75A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封装: TO-247-3

IRG6IC30UPBF

Infineon Technologies

IGBT 600V 25A 37W TO220ABFP

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.88V @ 15V, 120A
• Power - Max: 37W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 79nC
• Td (on/off) @ 25°C: 20ns/160ns
• Test Condition: 400V, 25A, 10 Ohm
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

封装: TO-220-3 Full Pack

IRGI4060DPBF

Infineon Technologies

IGBT 600V 14A 37W TO220ABFP

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 23A
• Vce(on) (Max) @ Vge, Ic: 1.72V @ 15V, 7.5A
• Power - Max: 37W
• Switching Energy: 47µJ (on), 141µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 29ns/101ns
• Test Condition: 400V, 7.5A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 73ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

封装: TO-220-3 Full Pack

NGD8205NT4G

ON Semiconductor

IGBT 390V 20A 125W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 390V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
• Power - Max: 125W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/5µs
• Test Condition: 300V, 9A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IXGR32N60CD1

IXYS

IGBT 600V 45A 140W ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
• Power - Max: 140W
• Switching Energy: 320µJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 25ns/85ns
• Test Condition: 480V, 32A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

封装: ISOPLUS247?

IXGP12N60C

IXYS

IGBT 600V 24A 100W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 90µJ (off)
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 20ns/60ns
• Test Condition: 480V, 12A, 18 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

FGP30N6S2D

Fairchild/ON Semiconductor

IGBT 600V 45A 167W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): 108A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
• Power - Max: 167W
• Switching Energy: 55µJ (on), 100µJ (off)
• Input Type: Standard
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 6ns/40ns
• Test Condition: 390V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 46ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IXGH24N60AU1

IXYS

IGBT 600V 48A 150W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 150W
• Switching Energy: 600µJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: 25ns/150ns
• Test Condition: 480V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

IKQ75N120CT2XKSA1

Infineon Technologies

IGBT HS SW 1200V 75A TO-247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
• Power - Max: 938W
• Switching Energy: 6.7mJ (on), 4.1mJ (off)
• Input Type: Standard
• Gate Charge: 370nC
• Td (on/off) @ 25°C: 37ns/328ns
• Test Condition: 600V, 75A, 6 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-46

封装: TO-247-3

AUIRGP76524D0

Infineon Technologies

DIODE IGBT 680V 24A TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IKP20N60H3

Infineon Technologies

IGBT 600V 40A 170W TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 170W
• Switching Energy: 690µJ
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 16ns/194ns
• Test Condition: 400V, 20A, 14.6 Ohm, 15V
• Reverse Recovery Time (trr): 112ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO-220-3

封装: TO-220-3

IXYH30N120C3D1

IXYS

IGBT 1200V 66A 416W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 66A
• Current - Collector Pulsed (Icm): 133A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
• Power - Max: 416W
• Switching Energy: 2.6mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 69nC
• Td (on/off) @ 25°C: 19ns/130ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 195ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封装: TO-247-3

FGH50N6S2D

Fairchild/ON Semiconductor

IGBT 600V 75A 463W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
• Power - Max: 463W
• Switching Energy: 260µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 13ns/55ns
• Test Condition: 390V, 30A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 55ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

IXGA48N60B3

IXYS

IGBT 600V 300W TO263AA

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 280A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
• Power - Max: 300W
• Switching Energy: 840µJ (on), 660µJ (off)
• Input Type: Standard
• Gate Charge: 115nC
• Td (on/off) @ 25°C: 22ns/130ns
• Test Condition: 480V, 30A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IKW25T120FKSA1

Infineon Technologies

IGBT 1200V 50A 190W TO247-3

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
• Power - Max: 190W
• Switching Energy: 4.2mJ
• Input Type: Standard
• Gate Charge: 155nC
• Td (on/off) @ 25°C: 50ns/560ns
• Test Condition: 600V, 25A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 200ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

FGL40N120ANTU

Fairchild/ON Semiconductor

IGBT 1200V 64A 500W TO264

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 64A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
• Power - Max: 500W
• Switching Energy: 2.3mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 15ns/110ns
• Test Condition: 600V, 40A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264

封装: TO-264-3, TO-264AA

IXGA36N60A3

IXYS

IGBT

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
• Power - Max: 220 W
• Switching Energy: 740µJ (on), 3mJ (off)
• Input Type: Standard
• Gate Charge: 80 nC
• Td (on/off) @ 25°C: 18ns/330ns
• Test Condition: 400V, 30A, 5Ohm, 15V
• Reverse Recovery Time (trr): 23 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA

封装: -

Request a Quote

HGT1S20N35F3VLR4505

Harris Corporation

40A, 350V, UFS N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote

IXYA20N120A4HV

IXYS

DISC IGBT XPT-GENX4 TO-263D2

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 135 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
• Power - Max: 375 W
• Switching Energy: 3.6mJ (on), 2.75mJ (off)
• Input Type: Standard
• Gate Charge: 46 nC
• Td (on/off) @ 25°C: 12ns/275ns
• Test Condition: 800mV, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): 54 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV

封装: -

Request a Quote

IXXH140N65C4

IXYS

DISC IGBT XPT-GENX4 TO-247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 320 A
• Current - Collector Pulsed (Icm): 730 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
• Power - Max: 1200 W
• Switching Energy: 4.9mJ (on), 1.7mJ (off)
• Input Type: Standard
• Gate Charge: 250 nC
• Td (on/off) @ 25°C: 43ns/240ns
• Test Condition: 400V, 75A, 4.7Ohm, 15V
• Reverse Recovery Time (trr): 90 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)

封装: -

Request a Quote

HGT1S14N41G3VLT

Fairchild Semiconductor

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote

RJP65T54DPM-E0-T2

Renesas Electronics Corporation

IGBT TRENCH TO-3FP

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
• Power - Max: 63.5 W
• Switching Energy: 330µJ (on), 760µJ (off)
• Input Type: Standard
• Gate Charge: 72 nC
• Td (on/off) @ 25°C: 35ns/120ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PF

封装: -

Request a Quote

RGW50TK65GVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 30A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
• Power - Max: 67 W
• Switching Energy: 390µJ (on), 430µJ (off)
• Input Type: Standard
• Gate Charge: 73 nC
• Td (on/off) @ 25°C: 35ns/102ns
• Test Condition: 400V, 25A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

封装: -

AOK40B65H2AL

Alpha & Omega Semiconductor Inc.

IGBT 650V 40A TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
• Power - Max: 260 W
• Switching Energy: 1.17mJ (on), 540µJ (off)
• Input Type: Standard
• Gate Charge: 61 nC
• Td (on/off) @ 25°C: 30ns/117ns
• Test Condition: 600V, 40A, 7.5Ohm, 15V
• Reverse Recovery Time (trr): 315 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: -

Request a Quote

IXBK64N250

IXYS

BIMOSFET 2500V 75A MONO TO-264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500 V
• Current - Collector (Ic) (Max): 75 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
• Power - Max: 735 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264AA

封装: -