页 2 - 晶体管 - JFET | 分立半导体产品 | 黑森尔电子
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晶体管 - JFET

记录 1,142
页  2/41
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MV2N4860
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 40 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
封装: TO-206AA, TO-18-3 Metal Can
库存3,040
30V
30V
100mA @ 15V
-
6V @ 500pA
18pF @ 10V
40 Ohm
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
hot 2N3822
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50V
  • Drain to Source Voltage (Vdss): 50V
  • Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
封装: TO-206AF, TO-72-4 Metal Can
库存3,968
50V
50V
10mA @ 15V
-
6V @ 500pA
6pF @ 15V
-
300mW
-55°C ~ 200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
SST5486-E3
Vishay Siliconix

JFET P-CH 35V 8MA SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存7,024
25V
-
8mA @ 15V
-
2V @ 10nA
5pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot J112RLRAG
ON Semiconductor

JFET N-CH 35V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存556,920
35V
-
5mA @ 15V
-
1V @ 1µA
-
50 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
TF256TH-4-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW VTFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-VTFP
封装: 3-SMD, Flat Leads
库存2,640
-
-
140µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
100mW
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-VTFP
PN4117A_D26Z
Fairchild/ON Semiconductor

JFET N-CH 40V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存2,864
40V
-
30µA @ 10V
-
600mV @ 1nA
3pF @ 10V
-
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
J108_D27Z
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 8 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存6,032
25V
-
80mA @ 15V
-
3V @ 10nA
-
8 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N4391UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,136
-
-
-
-
-
-
-
-
-
-
-
-
CPH6904-TL-E
ON Semiconductor

JFET 2N-CH 0.7W CPH6

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 700mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-CPH
封装: SC-74, SOT-457
库存7,120
-
-
20mA @ 5V
50mA
600mV @ 100µA
6pF @ 5V
-
700mW
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-CPH
MMBF4393LT3G
ON Semiconductor

JFET N-CH 30V 0.225W SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封装: TO-236-3, SC-59, SOT-23-3
库存6,032
30V
30V
5mA @ 15V
-
500mV @ 10nA
14pF @ 15V
100 Ohm
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
J106
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 6 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存26,430
25V
-
200mA @ 15V
-
2V @ 1µA
-
6 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
CMPFJ176 TR
Central Semiconductor Corp

IC JFET P-CH SOT23-3

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 250 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存3,680
30V
-
2mA @ 15V
-
1V @ 10nA
-
250 Ohm
350mW
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
CMPFJ175 TR
Central Semiconductor Corp

IC JFET P-CH SOT23-3

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 125 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236, SC-59, SOT-23-3 variant, 3-SMD
  • Supplier Device Package: SOT-23
封装: TO-236, SC-59, SOT-23-3 variant, 3-SMD
库存2,576
30V
-
7mA @ 15V
-
3V @ 10nA
-
125 Ohm
350mW
-65°C ~ 150°C (TJ)
Surface Mount
TO-236, SC-59, SOT-23-3 variant, 3-SMD
SOT-23
MMBF4091
Fairchild/ON Semiconductor

JFET N-CH 40V 350MW SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存7,424
40V
-
30mA @ 20V
-
5V @ 1nA
16pF @ 20V
30 Ohm
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
J113_D74Z
Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存4,848
35V
-
2mA @ 15V
-
500mV @ 1µA
-
100 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SK937Y4-AA
onsemi

NCH J-FET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
NTE2938
NTE Electronics, Inc

JFET P-CH 30V TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 300 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封装: -
Request a Quote
30 V
30 V
1.5 mA @ 15 V
-
800 mV @ 10 nA
-
300 Ohms
350 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
SMP5485TR
InterFET

JFET N-Channel -25V Low Ciss

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
  • Resistance - RDS(On): 220 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: -
Request a Quote
-
25 V
6 mA @ 15 V
-
2.5 V @ 10 nA
3.5pF @ 15V
220 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
SMPJ109TR
InterFET

JFET N-Channel -25V Low Noise

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 240 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3.5 V @ 0.5 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 0V
  • Resistance - RDS(On): 10 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: -
Request a Quote
-
25 V
240 mA @ 15 V
-
3.5 V @ 0.5 nA
28pF @ 0V
10 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
MX2N5116UB-TR
Microchip Technology

JFET P-CH 30V UB

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
  • Resistance - RDS(On): 175 Ohms
  • Power - Max: 500 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: -
Request a Quote
30 V
30 V
5 mA @ 15 V
-
1 V @ 1 nA
27pF @ 15V
175 Ohms
500 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2N4856UB-TR
Microchip Technology

JFET N-CH 40V

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 25 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: -
Request a Quote
40 V
40 V
175 mA @ 15 V
-
10 V @ 500 pA
18pF @ 10V
25 Ohms
360 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
MV2N4391UB-TR
Microchip Technology

JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
2SK2170-TL-E
onsemi

NCH J-FET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
LS3956-TO-71-6L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO71

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 20V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6 Metal Can
  • Supplier Device Package: TO-71
封装: -
库存1,494
60 V
-
500 µA @ 20 V
-
1 V @ 1 nA
6pF @ 20V
-
400 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-71-6 Metal Can
TO-71
2SK212D-SPA
onsemi

NCH J-FET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
2N4860UB-TR
Microchip Technology

JFET N-CH 30V

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 40 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: -
Request a Quote
30 V
30 V
100 mA @ 15 V
-
6 V @ 500 pA
18pF @ 10V
40 Ohms
360 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
SST405-SOIC-8L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 50V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 50 V
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
库存14,871
50 V
50 V
500 µA @ 10 V
-
500 mV @ 1 nA
8pF @ 15V
-
300 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MQ2N4092UB
Microchip Technology

JFET N-CH 40V UB

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 50 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: -
Request a Quote
40 V
40 V
15 mA @ 20 V
-
-
16pF @ 20V
50 Ohms
360 mW
-65°C ~ 175°C (TJ)
Surface Mount
3-SMD, No Lead
UB