IDT, Integrated Device Technology Inc 产品 - 存储器

71V65703S75BGG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 7.5NS 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

70V25L55PF8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 128Kb (8K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

70V06L55PF8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 64TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 128Kb (16K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (14x14)

封装: 64-LQFP

7025L55PF8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 128Kb (8K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

7006L55PF8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 64TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 128Kb (16K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (14x14)

封装: 64-LQFP

71V67603S150BGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 150MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.8ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V67603S150BGGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 150MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.8ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V67603S133BGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 4.2ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V67603S133BGGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 4.2ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65803S150BGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 150MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.8ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65803S133BGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 4.2ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65803S133BGGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 4.2ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65803S100BGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65803S100BGGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65703S85BGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8.5NS 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 8.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65603S150BGGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 150MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.8ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65603S133BGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 4.2ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65603S133BGGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 4.2ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

71V65603S100BGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

70P254L55BYGI8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 81CABGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 128Kb (8K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 81-TFBGA
• Supplier Device Package: 81-CABGA (5x5)

封装: 81-TFBGA

7143SA20PF

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 32Kb (2K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 20ns
• Access Time: 20ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

7133SA20PF

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 32Kb (2K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 20ns
• Access Time: 20ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

7143LA20J

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 68PLCC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 32Kb (2K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 20ns
• Access Time: 20ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 68-LCC (J-Lead)
• Supplier Device Package: 68-PLCC (24.21x24.21)

封装: 68-LCC (J-Lead)

7133LA20JG

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 68PLCC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 32Kb (2K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 20ns
• Access Time: 20ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 68-LCC (J-Lead)
• Supplier Device Package: 68-PLCC (24.21x24.21)

封装: 68-LCC (J-Lead)

7133LA20J

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 68PLCC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 32Kb (2K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 20ns
• Access Time: 20ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 68-LCC (J-Lead)
• Supplier Device Package: 68-PLCC (24.21x24.21)

封装: 68-LCC (J-Lead)

7143LA20JG

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 68PLCC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 32Kb (2K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 20ns
• Access Time: 20ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 68-LCC (J-Lead)
• Supplier Device Package: 68-PLCC (24.21x24.21)

封装: 68-LCC (J-Lead)

70V24S15J8

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 15NS 84PLCC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 64Kb (4K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 15ns
• Access Time: 15ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 84-LCC (J-Lead)
• Supplier Device Package: 84-PLCC (29.21x29.21)

封装: 84-LCC (J-Lead)

7024S17J8

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 17NS 84PLCC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 64Kb (4K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 17ns
• Access Time: 17ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 84-LCC (J-Lead)
• Supplier Device Package: 84-PLCC (29.21x29.21)

封装: 84-LCC (J-Lead)