页 12 - ISSI, Integrated Silicon Solution Inc 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS29GL256-70DLET-TR	ISSI, Integrated Silicon Solution Inc	256Mb, 64 Ball BGA(9X9mm), 3V, R Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: CFI Clock Frequency: - Write Cycle Time - Word, Page: 70ns, 200µs Access Time: 70 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LFBGA (9x9)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	256Mbit	CFI	-	70ns, 200µs	70 ns	3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-LFBGA (9x9)
IS64LPS12836EC-200TQLA3	ISSI, Integrated Silicon Solution Inc	4Mb,Pipeline,Sync,128K x 36,200M Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 3.1 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	封装: -	Request a Quote	SRAM	SRAM - Standard	4Mbit	Parallel	200 MHz	-	3.1 ns	3.135V ~ 3.465V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS25WX128-JHLA3-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 128MBIT SPI/OCT 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH	128Mbit	SPI - Octal I/O	200 MHz	-	-	1.7V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS46TR16512B-107MBLA1-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 8G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (10x14)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	8Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (10x14)
IS66WVO16M8DBLL-133BLI	ISSI, Integrated Silicon Solution Inc	IC PSRAM 128MBIT SPI/OCT 24TFBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 37.5ns Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	库存1,440	PSRAM	PSRAM (Pseudo SRAM)	128Mbit	SPI - Octal I/O	133 MHz	37.5ns	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS43TR82560BL-125KBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2GBIT PARALLEL 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
IS46LQ16256A-062TBLA1	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 4G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	4Gbit	LVSTL	1.6 GHz	-	-	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-VFBGA	200-VFBGA (10x14.5)
IS46LQ16256A-062TBLA2	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +105C), 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	4Gbit	LVSTL	1.6 GHz	-	-	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-VFBGA	200-VFBGA (10x14.5)
IS26KL256S-DABLI00	ISSI, Integrated Silicon Solution Inc	IC FLASH 256MBIT PAR 24VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 96 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-VFBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR	256Mbit	Parallel	100 MHz	-	96 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-VFBGA (6x8)
IS25WP064D-JBLA3-TR	ISSI, Integrated Silicon Solution Inc	64Mb QPI/QSPI, 8-pin SOP 2064Mil Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 40µs, 800µs Access Time: 5.5 ns Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	64Mbit	SPI - Quad I/O, QPI, DTR	166 MHz	40µs, 800µs	5.5 ns	1.65V ~ 1.95V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IS25LP010E-JNLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 1MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 1.2ms Access Time: 8 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存1,347	FLASH	FLASH - NOR	1Mbit	SPI - Quad I/O, QPI, DTR	104 MHz	1.2ms	8 ns	2.3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS46LQ16256A-062BLA2-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +105C), 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	4Gbit	LVSTL	1.6 GHz	-	-	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-VFBGA	200-VFBGA (10x14.5)
IS46LD32128B-25BPLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	4Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS22TF128G-JCLA1-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 1TBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
IS25LP080D-JVLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 8MBIT SPI/QUAD 8VVSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-VVSOP	封装: -	Request a Quote	FLASH	FLASH - NOR	8Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	800µs	-	2.3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-VVSOP
IS49NLC93200A-25WBLI	ISSI, Integrated Silicon Solution Inc	RLDRAM2 Memory, 288Mbit, x9, Com Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 2 Memory Size: 288Mbit Memory Interface: HSTL Clock Frequency: 400 MHz Write Cycle Time - Word, Page: - Access Time: 20 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-TWBGA (11x18.5)	封装: -	Request a Quote	DRAM	RLDRAM 2	288Mbit	HSTL	400 MHz	-	20 ns	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount	144-TFBGA	144-TWBGA (11x18.5)
IS62WVS1288GBLL-45NLI-TR	ISSI, Integrated Silicon Solution Inc	1Mb, Serial SRAM, 2.7V-3.6V, 45M Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 1Mbit Memory Interface: SPI - Quad I/O, SDI Clock Frequency: 45 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	SRAM	SRAM - Synchronous	1Mbit	SPI - Quad I/O, SDI	45 MHz	-	15 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS43LD32640C-18BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2GBIT PARALLEL 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	2Gbit	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46LD32640C-18BLA1	ISSI, Integrated Silicon Solution Inc	IC DRAM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	2Gbit	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46LD32640C-18BLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	2Gbit	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS43TR16640BL-125KBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	1Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46TR16640BL-125JBLA25-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 115°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	1Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 115°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43LQ16128A-062TBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 2GBIT LVSTL 200TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封装: -	库存402	DRAM	SDRAM - Mobile LPDDR4	2Gbit	LVSTL	1.6 GHz	-	-	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
IS22TF128G-JCLA2-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 1TBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
IS62WV25616EBLL-55TLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT PARALLEL 44TSOP II Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	55ns	55 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS25LP512MH-JLLE-TR	ISSI, Integrated Silicon Solution Inc	512Mb QPI/QSPI, 8-pin WSON 6x8mm Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Mbit	SPI - Quad I/O, QPI, DTR	166 MHz	50µs, 1ms	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
IS25WP128-JMLE-TY	ISSI, Integrated Silicon Solution Inc	128Mb QPI/QSPI, 16-pin SOP 300Mi Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 40µs, 800µs Access Time: 7 ns Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	128Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	40µs, 800µs	7 ns	1.65V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS46LD32128A-25BPLA1	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	4Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS46LD32128A-25BPLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	4Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS43LD32128B-18BLI	ISSI, Integrated Silicon Solution Inc	4G, 1.2/1.8V, LPDDR2, 128Mx32, 5 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	4Gbit	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)

IS29GL256-70DLET-TR

ISSI, Integrated Silicon Solution Inc

256Mb, 64 Ball BGA(9X9mm), 3V, R

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: CFI
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns, 200µs
Access Time: 70 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LFBGA (9x9)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

256Mbit

CFI

-

70ns, 200µs

70 ns

3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-LFBGA (9x9)

IS64LPS12836EC-200TQLA3

ISSI, Integrated Silicon Solution Inc

4Mb,Pipeline,Sync,128K x 36,200M

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

封装: -

Request a Quote

SRAM

SRAM - Standard

4Mbit

Parallel

200 MHz

-

3.1 ns

3.135V ~ 3.465V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS25WX128-JHLA3-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/OCT 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

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FLASH

128Mbit

SPI - Octal I/O

200 MHz

-

1.7V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS46TR16512B-107MBLA1-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (10x14)

封装: -

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DRAM

SDRAM - DDR3

8Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (10x14)

IS66WVO16M8DBLL-133BLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 128MBIT SPI/OCT 24TFBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 37.5ns
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

库存1,440

PSRAM

PSRAM (Pseudo SRAM)

128Mbit

SPI - Octal I/O

133 MHz

37.5ns

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS43TR82560BL-125KBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

封装: -

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DRAM

SDRAM - DDR3L

2Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

IS46LQ16256A-062TBLA1

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 4G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR4

4Gbit

LVSTL

1.6 GHz

-

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-VFBGA

200-VFBGA (10x14.5)

IS46LQ16256A-062TBLA2

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR4

4Gbit

LVSTL

1.6 GHz

-

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-VFBGA

200-VFBGA (10x14.5)

IS26KL256S-DABLI00

ISSI, Integrated Silicon Solution Inc

IC FLASH 256MBIT PAR 24VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 96 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-VFBGA (6x8)

封装: -

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FLASH

FLASH - NOR

256Mbit

Parallel

100 MHz

-

96 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-VFBGA (6x8)

IS25WP064D-JBLA3-TR

ISSI, Integrated Silicon Solution Inc

64Mb QPI/QSPI, 8-pin SOP 2064Mil

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 40µs, 800µs
Access Time: 5.5 ns
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: -

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FLASH

FLASH - NOR (SLC)

64Mbit

SPI - Quad I/O, QPI, DTR

166 MHz

40µs, 800µs

5.5 ns

1.65V ~ 1.95V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IS25LP010E-JNLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 1MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 1.2ms
Access Time: 8 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存1,347

FLASH

FLASH - NOR

1Mbit

SPI - Quad I/O, QPI, DTR

104 MHz

1.2ms

8 ns

2.3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS46LQ16256A-062BLA2-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR4

4Gbit

LVSTL

1.6 GHz

-

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-VFBGA

200-VFBGA (10x14.5)

IS46LD32128B-25BPLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封装: -

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DRAM

SDRAM - Mobile LPDDR2-S4

4Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS22TF128G-JCLA1-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 1TBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: -

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FLASH

FLASH - NAND (TLC)

1Tbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

IS25LP080D-JVLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 8MBIT SPI/QUAD 8VVSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-VVSOP

封装: -

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FLASH

FLASH - NOR

8Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

800µs

-

2.3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-VVSOP

IS49NLC93200A-25WBLI

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 288Mbit, x9, Com

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 2
Memory Size: 288Mbit
Memory Interface: HSTL
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: -
Access Time: 20 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-TWBGA (11x18.5)

封装: -

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DRAM

RLDRAM 2

288Mbit

HSTL

400 MHz

-

20 ns

1.7V ~ 1.9V

-40°C ~ 85°C (TA)

Surface Mount

144-TFBGA

144-TWBGA (11x18.5)

IS62WVS1288GBLL-45NLI-TR

ISSI, Integrated Silicon Solution Inc

1Mb, Serial SRAM, 2.7V-3.6V, 45M

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 1Mbit
Memory Interface: SPI - Quad I/O, SDI
Clock Frequency: 45 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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SRAM

SRAM - Synchronous

1Mbit

SPI - Quad I/O, SDI

45 MHz

-

15 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS43LD32640C-18BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR2-S4

2Gbit

HSUL_12

533 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46LD32640C-18BLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR2-S4

2Gbit

HSUL_12

533 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46LD32640C-18BLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR2-S4

2Gbit

HSUL_12

533 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS43TR16640BL-125KBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

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DRAM

SDRAM - DDR3L

1Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46TR16640BL-125JBLA25-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 115°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

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DRAM

SDRAM - DDR3L

1Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 115°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43LQ16128A-062TBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT LVSTL 200TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

库存402

DRAM

SDRAM - Mobile LPDDR4

2Gbit

LVSTL

1.6 GHz

-

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

IS22TF128G-JCLA2-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 1TBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: -

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FLASH

FLASH - NAND (TLC)

1Tbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

IS62WV25616EBLL-55TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 44TSOP II

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: -

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SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

55ns

55 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS25LP512MH-JLLE-TR

ISSI, Integrated Silicon Solution Inc

512Mb QPI/QSPI, 8-pin WSON 6x8mm

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封装: -

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FLASH

FLASH - NOR (SLC)

512Mbit

SPI - Quad I/O, QPI, DTR

166 MHz

50µs, 1ms

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

IS25WP128-JMLE-TY

ISSI, Integrated Silicon Solution Inc

128Mb QPI/QSPI, 16-pin SOP 300Mi

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 40µs, 800µs
Access Time: 7 ns
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: -

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FLASH

FLASH - NOR (SLC)

128Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

40µs, 800µs

7 ns

1.65V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS46LD32128A-25BPLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封装: -

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DRAM

SDRAM - Mobile LPDDR2-S4

4Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS46LD32128A-25BPLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封装: -

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DRAM

SDRAM - Mobile LPDDR2-S4

4Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS43LD32128B-18BLI

ISSI, Integrated Silicon Solution Inc

4G, 1.2/1.8V, LPDDR2, 128Mx32, 5

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR2-S4

4Gbit

HSUL_12

533 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)