ISSI, Integrated Silicon Solution Inc 产品

IS49NLS96400-33B

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 300MHZ 144BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (64M x 9)
• Memory Interface: Parallel
• Clock Frequency: 300MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FCBGA (11x18.5)

封装: 144-TFBGA

IS45S32400E-6BLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS42S32800D-7BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 90FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS45S32400B-7BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 90FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS42S32800D-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS42S32200E-6BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 90FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (2M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS42S16100E-7BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 60TFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TFBGA (6.4x10.1)

封装: 60-TFBGA

IS46TR16128AL-125KBLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 96BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

封装: 96-TFBGA

IS61LPS51218A-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.1ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

IS42S16320F-7BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TWBGA (13x8)

封装: 54-TFBGA

IS45S16160G-7TLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

IS43DR86400D-3DBI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 333MHZ 60BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 450ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TWBGA (10.5x8)

封装: 60-TFBGA

IS62WV51216EBLL-45BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 45NS 48MBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 8Mb (512K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45ns
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (6x8)

封装: 48-VFBGA

IS62WV1288BLL-55HLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 55NS 32STSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (128K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-LFSOP (0.465", 11.80mm Width)
• Supplier Device Package: 32-sTSOP I

封装: 32-LFSOP (0.465", 11.80mm Width)

IS61NLP51236B-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 165BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-TFBGA (13x15)

封装: 165-TBGA

IS62C256AL-45TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 256KBIT 45NS 28TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.465", 11.80mm Width)
• Supplier Device Package: 28-TSOP I

封装: 28-TSSOP (0.465", 11.80mm Width)

IS66WVC4M16ECLL-7010BLI-TR

ISSI, Integrated Silicon Solution Inc

IC PSRAM 64M PARALLEL 54BGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mb (4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (6x8)

封装: 54-VFBGA

IS25WP064A-RHLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 64M SPI 133MHZ 24TFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8)
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 800µs
• Access Time: -
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-TFBGA (6x8)

封装: 24-TBGA

IS61NLF25672-6.5B1-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 209LFBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (256K x 72)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 209-BGA
• Supplier Device Package: 209-LFBGA (14x22)

封装: 209-BGA

IS25LP064D-JLLE

ISSI, Integrated Silicon Solution Inc

64Mb QPI/QPI/QSPI, 8-pin WSON6X8

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 40µs, 800µs
• Access Time: -
• Voltage - Supply: 2.3V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (8x6)

封装: -

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IS49RL36160A-093FBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT PAR 168FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: RLDRAM 3
• Memory Size: 576Mbit
• Memory Interface: Parallel
• Clock Frequency: 1.066 GHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5 ns
• Voltage - Supply: 1.28V ~ 1.42V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 168-LBGA
• Supplier Device Package: 168-FBGA (13.5x13.5)

封装: -

IS25WP040E-JBLE-TR

ISSI, Integrated Silicon Solution Inc

4Mb QSPI, 8-pin SOP 208Mil, RoHS

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 4Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 104 MHz
• Write Cycle Time - Word, Page: 40µs, 1.2ms
• Access Time: 8 ns
• Voltage - Supply: 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

封装: -

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IS66WVS4M8ALL-104NLI-TR

ISSI, Integrated Silicon Solution Inc

32Mb, SerialRAM, 1.65V-1.95V, 10

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 32Mbit
• Memory Interface: SPI, QPI
• Clock Frequency: 104 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7 ns
• Voltage - Supply: 1.65V ~ 1.95V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: -

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IS46LD32640C-18BLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2-S4
• Memory Size: 2Gbit
• Memory Interface: HSUL_12
• Clock Frequency: 533 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.5 ns
• Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 134-TFBGA
• Supplier Device Package: 134-TFBGA (10x11.5)

封装: -

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IS61NLF51236B-6-5TQLI

ISSI, Integrated Silicon Solution Inc

18MB,"NO-WAIT"/FLOWTHROUGH,SYNC,

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, ZBT
• Memory Size: 18Mbit
• Memory Interface: Parallel
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.5 ns
• Voltage - Supply: 3.135V ~ 3.465V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x20)

封装: -

IS46TR16256ECL-125LB2LA2

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 4Gbit
• Memory Interface: Parallel
• Clock Frequency: 800 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

封装: -

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IS43LD16256A-25BPLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2-S4
• Memory Size: 4Gbit
• Memory Interface: HSUL_12
• Clock Frequency: 400 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.5 ns
• Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 168-VFBGA
• Supplier Device Package: 168-VFBGA (12x12)

封装: -

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IS66WVS1M8ALL-104NLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 8MBIT SPI QPI 8SOIC

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 8Mbit
• Memory Interface: SPI, QPI
• Clock Frequency: 104 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7 ns
• Voltage - Supply: 1.65V ~ 1.95V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: -