ISSI, Integrated Silicon Solution Inc 产品

IS43LD16640A-3BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 134-TFBGA
• Supplier Device Package: 134-TFBGA (10x11.5)

封装: 134-TFBGA

IS25CD010-JNLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 1MBIT 100MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 1Mb (128K x 8)
• Memory Interface: SPI
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

IS42S16160D-7B

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54TFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x13)

封装: 54-TFBGA

IS61NLF51218A-7.5B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 117MHZ 165BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 117MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TFBGA
• Supplier Device Package: 165-TFBGA (13x15)

封装: 165-TFBGA

IS61NVF51236-7.5TQI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 7.5NS 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 117MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

IS64LPS204818B-166TQLA3

ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 166MHZ 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 36Mb (2M x 18)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.8ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x20)

封装: 100-LQFP

IS61QDPB21M18A-333M3L

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 333MHZ 165BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, QUADP
• Memory Size: 18Mb (1M x 18)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8.4ns
• Voltage - Supply: 1.71 V ~ 1.89 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LBGA
• Supplier Device Package: 165-LFBGA (15x17)

封装: 165-LBGA

IS46R16160D-6BLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 60BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TFBGA (8x13)

封装: 60-TFBGA

IS42S32800G-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS42SM32800K-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS43LR32800G-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile DDR
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS42VM32800K-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS42S32800J-75ETLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

IS43LR16160G-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 60BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile DDR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TFBGA (8x10)

封装: 60-TFBGA

IS43R83200D-5TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP II

封装: 66-TSSOP (0.400", 10.16mm Width)

IS62WV51216EALL-55BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 55NS 48BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 8Mb (512K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 1.65 V ~ 2.2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (6x8)

封装: 48-VFBGA

IS61WV5128EDBLL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP2

封装: 44-TSOP (0.400", 10.16mm Width)

IS61WV102416DBLL-10BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 10NS 48BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-TFBGA (6x8)

封装: 48-TFBGA

IS25LQ032B-JKLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 32MBIT 104MHZ 8WSON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (4M x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: 1ms
• Access Time: -
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (6x5)

封装: 8-WDFN Exposed Pad

IS42S16160L-6BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 54TFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mbit
• Memory Interface: LVTTL
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4 ns
• Voltage - Supply: 3V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x8)

封装: -

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IS25WP020E-JNLE-TR

ISSI, Integrated Silicon Solution Inc

2Mb QSPI, 8-pin SOP 150Mil, RoHS

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 2Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 104 MHz
• Write Cycle Time - Word, Page: 40µs, 1.2ms
• Access Time: 8 ns
• Voltage - Supply: 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

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IS46QR16512A-075VBLA2

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 8

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gbit
• Memory Interface: Parallel
• Clock Frequency: 1.333 GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 18 ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (10x14)

封装: -

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IS49NLS93200A-25EWBL

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 288Mbit, x9, Sep

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: RLDRAM 2
• Memory Size: 288Mbit
• Memory Interface: HSTL
• Clock Frequency: 400 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 15 ns
• Voltage - Supply: 1.7V ~ 1.9V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-TWBGA (11x18.5)

封装: -

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IS43R86400E-5BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 512MBIT PARALLEL 60TFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mbit
• Memory Interface: Parallel
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700 ps
• Voltage - Supply: 2.3V ~ 2.7V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TFBGA (8x13)

封装: -

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IS46QR16512A-075VBLA2-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 8

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gbit
• Memory Interface: Parallel
• Clock Frequency: 1.333 GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 18 ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (10x14)

封装: -

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IS25LP040E-JNLA3

ISSI, Integrated Silicon Solution Inc

4Mb QSPI, 8-pin SOP 150Mil, RoHS

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 4Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 104 MHz
• Write Cycle Time - Word, Page: 40µs, 1.2ms
• Access Time: 8 ns
• Voltage - Supply: 2.3V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: -

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IS25LP256E-RMLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 256MBIT SPI/QUAD 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mbit
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 50µs, 1ms
• Access Time: -
• Voltage - Supply: 2.3V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

封装: -

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IS25WP080D-JULA3-TR

ISSI, Integrated Silicon Solution Inc

8Mb QSPI, 8-pin USON 2x3mm, RoHS

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 8Mbit
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: 40µs, 800µs
• Access Time: 7 ns
• Voltage - Supply: 1.65V ~ 1.95V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: 8-USON (2x3)

封装: -

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