页 2 - IXYS 产品 - 晶体管 - UGBT，MOSFET - 单 | 黑森尔电子
联系我们
SalesDept@heisener.com +86-755-83210559 ext. 813
登入/注册
Language Translation

* Please refer to the English Version as our Official Version.

BOM
购物车 0

IXYS 产品 - 晶体管 - UGBT，MOSFET - 单

记录 1,002
页  2/36
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXDA20N120AS-TUB
IXYS

IGBT

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 35 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 200 W
  • Switching Energy: 3.1mJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 600V, 20A, 82Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
封装: -
Request a Quote
1200 V
38 A
35 A
3V @ 15V, 20A
200 W
3.1mJ (on), 2.4mJ (off)
Standard
70 nC
100ns/500ns
600V, 20A, 82Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
IXYN75N65C3D1
IXYS

IGBT 650V 150A SOT227B

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 360 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 600 W
  • Switching Energy: 2mJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 122 nC
  • Td (on/off) @ 25°C: 26ns/93ns
  • Test Condition: 400V, 60A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: -
Request a Quote
650 V
150 A
360 A
2.3V @ 15V, 60A
600 W
2mJ (on), 950µJ (off)
Standard
122 nC
26ns/93ns
400V, 60A, 3Ohm, 15V
65 ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
IXGT32N170-TRL
IXYS

IGBT 1700V 75A 350W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
  • Power - Max: 350 W
  • Switching Energy: 11mJ (off)
  • Input Type: Standard
  • Gate Charge: 155 nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1020V, 32A, 2.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
封装: -
库存6,666
1700 V
75 A
200 A
3.3V @ 15V, 32A
350 W
11mJ (off)
Standard
155 nC
45ns/270ns
1020V, 32A, 2.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA
IXYH20N65B3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 58 A
  • Current - Collector Pulsed (Icm): 108 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 230 W
  • Switching Energy: 500µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 29 nC
  • Td (on/off) @ 25°C: 12ns/103ns
  • Test Condition: 400V, 20A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: -
Request a Quote
650 V
58 A
108 A
2.1V @ 15V, 20A
230 W
500µJ (on), 450µJ (off)
Standard
29 nC
12ns/103ns
400V, 20A, 20Ohm, 15V
25 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IXYT30N450HV
IXYS

IGBT 4500V 60A TO268HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 4500 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
  • Power - Max: 430 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 88 nC
  • Td (on/off) @ 25°C: 38ns/168ns
  • Test Condition: 960V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXYT)
封装: -
库存255
4500 V
60 A
200 A
3.9V @ 15V, 30A
430 W
-
Standard
88 nC
38ns/168ns
960V, 30A, 10Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXYT)
IXBF55N300
IXYS

DISC IGBT BIMSFT-VERYHIVOLT I4-P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000 V
  • Current - Collector (Ic) (Max): 86 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
  • Power - Max: 357 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 335 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.9 µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac™-5 (3 Leads)
  • Supplier Device Package: ISOPLUS i4-PAC™
封装: -
Request a Quote
3000 V
86 A
600 A
3.2V @ 15V, 55A
357 W
-
Standard
335 nC
-
-
1.9 µs
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac™-5 (3 Leads)
ISOPLUS i4-PAC™
IXYH55N120A4
IXYS

IGBT GENX4 1200V 55A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 175 A
  • Current - Collector Pulsed (Icm): 350 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
  • Power - Max: 650 W
  • Switching Energy: 2.3mJ (on), 5.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 23ns/300ns
  • Test Condition: 600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 35 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封装: -
库存78
1200 V
175 A
350 A
1.8V @ 15V, 55A
650 W
2.3mJ (on), 5.3mJ (off)
Standard
110 nC
23ns/300ns
600V, 40A, 5Ohm, 15V
35 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXYH55N120C4
IXYS

IGBT 1200V 140A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): 290 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
  • Power - Max: 650 W
  • Switching Energy: 3.5mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: 114 nC
  • Td (on/off) @ 25°C: 20ns/180ns
  • Test Condition: 600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封装: -
库存3
1200 V
140 A
290 A
2.5V @ 15V, 55A
650 W
3.5mJ (on), 1.34mJ (off)
Standard
114 nC
20ns/180ns
600V, 40A, 5Ohm, 15V
50 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXGM17N100A
IXYS

IGBT 1000V 34A 150W TO204AE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): 68 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
  • Power - Max: 150 W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 800V, 17A, 82Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-204AE
封装: -
Request a Quote
1000 V
34 A
68 A
4V @ 15V, 17A
150 W
3mJ (off)
Standard
120 nC
100ns/500ns
800V, 17A, 82Ohm, 15V
200 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
IXGT25N250-T-R
IXYS

IGBT NPT 2500V 60A TO268HV

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
  • Power - Max: 250 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 75 nC
  • Td (on/off) @ 25°C: 68ns/209ns
  • Test Condition: 1250V, 50A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 233 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXGT)
封装: -
Request a Quote
2500 V
60 A
200 A
2.9V @ 15V, 25A
250 W
-
Standard
75 nC
68ns/209ns
1250V, 50A, 5Ohm, 15V
233 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXGT)
IXGA48N60A3-TRL
IXYS

IXGA48N60A3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
  • Power - Max: 300 W
  • Switching Energy: 950µJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 25ns/334ns
  • Test Condition: 480V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 30 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
库存11,865
600 V
120 A
300 A
1.35V @ 15V, 32A
300 W
950µJ (on), 2.9mJ (off)
Standard
110 nC
25ns/334ns
480V, 32A, 5Ohm, 15V
30 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXYH40N120B4
IXYS

IGBT DISCRETE TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 136 A
  • Current - Collector Pulsed (Icm): 250 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
  • Power - Max: 680 W
  • Switching Energy: 5.9mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 19ns/220ns
  • Test Condition: 960V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 53 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封装: -
Request a Quote
1200 V
136 A
250 A
2.1V @ 15V, 32A
680 W
5.9mJ (on), 2.9mJ (off)
Standard
94 nC
19ns/220ns
960V, 32A, 5Ohm, 15V
53 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXYH40N120C4
IXYS

IGBT DISCRETE TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 230 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 680 W
  • Switching Energy: 5.55mJ (on), 1.55mJ (off)
  • Input Type: Standard
  • Gate Charge: 92 nC
  • Td (on/off) @ 25°C: 21ns/140ns
  • Test Condition: 960V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 55 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封装: -
Request a Quote
1200 V
120 A
230 A
2.5V @ 15V, 32A
680 W
5.55mJ (on), 1.55mJ (off)
Standard
92 nC
21ns/140ns
960V, 32A, 5Ohm, 15V
55 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXYH40N120A4
IXYS

IGBT 1200V 40A GENX4 XPT TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): 275 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
  • Power - Max: 600 W
  • Switching Energy: 2.3mJ (on), 3.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 22ns/204ns
  • Test Condition: 600V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封装: -
Request a Quote
1200 V
140 A
275 A
1.8V @ 15V, 32A
600 W
2.3mJ (on), 3.75mJ (off)
Standard
90 nC
22ns/204ns
600V, 32A, 5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXXH80N65B4D1
IXYS

IGBT PT 650V 180A TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 180 A
  • Current - Collector Pulsed (Icm): 430 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
  • Power - Max: 625 W
  • Switching Energy: 3.36mJ (on), 1.83mJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 26ns/112ns
  • Test Condition: 400V, 80A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXXH)
封装: -
库存2,940
650 V
180 A
430 A
2.1V @ 15V, 80A
625 W
3.36mJ (on), 1.83mJ (off)
Standard
120 nC
26ns/112ns
400V, 80A, 3Ohm, 15V
100 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXXH)
IXYP20N120A4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 135 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 3.6mJ (on), 2.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 46 nC
  • Td (on/off) @ 25°C: 12ns/275ns
  • Test Condition: 960V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 54 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
封装: -
Request a Quote
1200 V
80 A
135 A
1.9V @ 15V, 20A
375 W
3.6mJ (on), 2.75mJ (off)
Standard
46 nC
12ns/275ns
960V, 20A, 10Ohm, 15V
54 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)
IXYP20N120C4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 68 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 4.4mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: 14ns/160ns
  • Test Condition: 960V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 53 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
封装: -
Request a Quote
1200 V
68 A
120 A
2.5V @ 15V, 20A
375 W
4.4mJ (on), 1mJ (off)
Standard
44 nC
14ns/160ns
960V, 20A, 10Ohm, 15V
53 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)
IXYP20N120B4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 76 A
  • Current - Collector Pulsed (Icm): 130 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 3.9mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: 15ns/200ns
  • Test Condition: 960V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 47 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
封装: -
Request a Quote
1200 V
76 A
130 A
2.1V @ 15V, 20A
375 W
3.9mJ (on), 1.6mJ (off)
Standard
44 nC
15ns/200ns
960V, 20A, 10Ohm, 15V
47 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)
IXXX140N65B4H1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 840 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
  • Power - Max: 1200 W
  • Switching Energy: 5.75mJ (on), 2.67mJ (off)
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 54ns/270ns
  • Test Condition: 400V, 100A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 105 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
封装: -
Request a Quote
650 V
340 A
840 A
1.9V @ 15V, 120A
1200 W
5.75mJ (on), 2.67mJ (off)
Standard
250 nC
54ns/270ns
400V, 100A, 4.7Ohm, 15V
105 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
IXGP28N60A3
IXYS

IGBT

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 170 A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
  • Power - Max: 190 W
  • Switching Energy: 700µJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 66 nC
  • Td (on/off) @ 25°C: 18ns/300ns
  • Test Condition: 480V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 26 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: -
库存90
600 V
75 A
170 A
1.4V @ 15V, 24A
190 W
700µJ (on), 2.4mJ (off)
Standard
66 nC
18ns/300ns
480V, 24A, 10Ohm, 15V
26 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IXBT32N300HV
IXYS

IGBT 3000V 80A TO268HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 280 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
  • Power - Max: 400 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 142 nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 1250V, 32A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 1500 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXBT)
封装: -
Request a Quote
3000 V
80 A
280 A
3.2V @ 15V, 32A
400 W
-
Standard
142 nC
50ns/160ns
1250V, 32A, 2Ohm, 15V
1500 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXBT)
IXYP30N120A4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 106 A
  • Current - Collector Pulsed (Icm): 184 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 500 W
  • Switching Energy: 4mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 57 nC
  • Td (on/off) @ 25°C: 15ns/235ns
  • Test Condition: 960V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
封装: -
Request a Quote
1200 V
106 A
184 A
1.9V @ 15V, 25A
500 W
4mJ (on), 3.4mJ (off)
Standard
57 nC
15ns/235ns
960V, 25A, 5Ohm, 15V
42 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)
IXYP30N120B4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYP30N120C4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYA20N120C3HV-TRL
IXYS

IXYA20N120C3HV TRL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 278 W
  • Switching Energy: 1.3mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 53 nC
  • Td (on/off) @ 25°C: 20ns/90ns
  • Test Condition: 600V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封装: -
Request a Quote
1200 V
40 A
96 A
3.4V @ 15V, 20A
278 W
1.3mJ (on), 500µJ (off)
Standard
53 nC
20ns/90ns
600V, 20A, 10Ohm, 15V
29 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
IXYN300N65A3
IXYS

DISC IGBT XPT-GENX3 SOT-227B(MIN

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 470 A
  • Current - Collector Pulsed (Icm): 1600 A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
  • Power - Max: 1500 W
  • Switching Energy: 7.8mJ (on), 4.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 565 nC
  • Td (on/off) @ 25°C: 42ns/190ns
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 125 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: -
Request a Quote
650 V
470 A
1600 A
1.6V @ 15V, 100A
1500 W
7.8mJ (on), 4.7mJ (off)
Standard
565 nC
42ns/190ns
400V, 100A, 1Ohm, 15V
125 ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
MMIX1Y82N120C3H1
IXYS

DISC IGBT SMPD PKG-STANDARD SMPD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 78 A
  • Current - Collector Pulsed (Icm): 320 A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 82A
  • Power - Max: 320 W
  • Switching Energy: 4.95mJ (on), 2.78mJ (off)
  • Input Type: Standard
  • Gate Charge: 215 nC
  • Td (on/off) @ 25°C: 29ns/192ns
  • Test Condition: 600V, 80A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 78 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
封装: -
Request a Quote
1200 V
78 A
320 A
3.4V @ 15V, 82A
320 W
4.95mJ (on), 2.78mJ (off)
Standard
215 nC
29ns/192ns
600V, 80A, 2Ohm, 15V
78 ns
-55°C ~ 150°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
24-SMPD
IXXH110N65B4
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 250 A
  • Current - Collector Pulsed (Icm): 570 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
  • Power - Max: 880 W
  • Switching Energy: 2.2mJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 183 nC
  • Td (on/off) @ 25°C: 26ns/146ns
  • Test Condition: 400V, 55A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封装: -
Request a Quote
650 V
250 A
570 A
2.1V @ 15V, 110A
880 W
2.2mJ (on), 1.05mJ (off)
Standard
183 nC
26ns/146ns
400V, 55A, 2Ohm, 15V
40 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)