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IXYS |
IGBT 600V 90A 300W TO220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): 220A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
- Power - Max: 300W
- Switching Energy: 950µJ (on), 840µJ (off)
- Input Type: Standard
- Gate Charge: 113nC
- Td (on/off) @ 25°C: 40ns/270ns
- Test Condition: 400V, 36A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存4,960 |
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IXYS |
IGBT 1200V 30A 150W TO268
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
- Power - Max: 150W
- Switching Energy: 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 57nC
- Td (on/off) @ 25°C: 30ns/148ns
- Test Condition: 960V, 15A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,416 |
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IXYS |
IGBT 1000V 20A 100W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): 40A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 10A
- Power - Max: 100W
- Switching Energy: 2mJ (off)
- Input Type: Standard
- Gate Charge: 52nC
- Td (on/off) @ 25°C: 100ns/550ns
- Test Condition: 800V, 10A, 150 Ohm, 15V
- Reverse Recovery Time (trr): 60ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存7,664 |
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IXYS |
MOD IGBT SIXPACK RBSOA 1200V E2
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Power - Max: 225W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 25A
- Current - Collector Cutoff (Max): 2mA
- Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存5,904 |
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IXYS |
IGBT MODULE 1200V 20A HEX
- IGBT Type: PT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 28A
- Power - Max: 100W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 16A
- Current - Collector Cutoff (Max): 1.5mA
- Input Capacitance (Cies) @ Vce: -
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存2,496 |
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IXYS |
MOSFET N-CH 800V 8A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 770 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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封装: ISOPLUS220? |
库存6,096 |
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IXYS |
MOSFET N-CH 1500V 8A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 4A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存2,096 |
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IXYS |
MOSFET N-CH 500V 64A ISOPLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 66 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS264?
- Package / Case: ISOPLUS264?
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封装: ISOPLUS264? |
库存4,192 |
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IXYS |
MOSFET N-CH 1000V 26A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 390 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存5,808 |
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IXYS |
MOSFET N-CH 150V 180A PLUS 247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存7,408 |
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IXYS |
MOSFET N-CH 500V 2.7A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存7,472 |
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IXYS |
MOD THYRISTOR/DIO 1400V TO-240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 115A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存7,920 |
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IXYS |
MOD THYRISTOR 1200V 105A ECOPAC2
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 105A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
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封装: ECO-PAC2 |
库存7,904 |
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IXYS |
MOD THYRISTOR DUAL 16KV TO-240
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 25A
- Current - On State (It (RMS)) (Max): 40A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 55mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 430A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存2,160 |
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IXYS |
DIODE SCHOTTKY 100V 20A ISOPLUS
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220?
- Supplier Device Package: ISOPLUS220?
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: ISOPLUS220? |
库存7,696 |
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IXYS |
DIODE MODULE 1.2KV 85A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.17V @ 85A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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封装: TO-240AA |
库存5,824 |
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IXYS |
DIODE MODULE 1.6KV 65A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io) (per Diode): 65A
- Voltage - Forward (Vf) (Max) @ If: 1.18V @ 65A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 1600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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封装: TO-240AA |
库存7,088 |
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IXYS |
DIODE BRIDGE 124A 1800V PWS-C
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 124A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-C
- Supplier Device Package: PWS-C
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封装: PWS-C |
库存6,848 |
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IXYS |
DIODE BRIDGE 1200V 68A ECO-PAC1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 68A
- Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
- Current - Reverse Leakage @ Vr: 40µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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封装: ECO-PAC1 |
库存4,080 |
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IXYS |
IC DRIVER HALF BRIDGE 8DIP
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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封装: 8-DIP (0.300", 7.62mm) |
库存2,128 |
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IXYS |
IC DRVR HALF BRIDGE GATE 8-SOIC
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SOIC
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封装: 8-SOIC |
库存7,536 |
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IXYS |
SCR 600V 756A W8
- Voltage - Off State: 600 V
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 200 mA
- Voltage - On State (Vtm) (Max): 1.88 V
- Current - On State (It (AV)) (Max): 370 A
- Current - On State (It (RMS)) (Max): 756 A
- Current - Hold (Ih) (Max): 600 mA
- Current - Off State (Max): 30 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 5170A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: W8
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 650V 34A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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封装: - |
库存825 |
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IXYS |
SCR 1.8KV 8545A W82
- Voltage - Off State: 1.8 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2.12 V
- Current - On State (It (AV)) (Max): 4340 A
- Current - On State (It (RMS)) (Max): 8545 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 200 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 60500A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AF
- Supplier Device Package: W82
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封装: - |
Request a Quote |
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IXYS |
SCR 1.2KV 2940A W11
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 1.7 V
- Current - On State (It (AV)) (Max): 1446 A
- Current - On State (It (RMS)) (Max): 2940 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W11
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封装: - |
库存36 |
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IXYS |
DIODE GEN PURP 600V 8A TO263AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
- Operating Temperature - Junction: -40°C ~ 150°C
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封装: - |
Request a Quote |
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IXYS |
TRIAC 600V 25A TO263
- Triac Type: Standard
- Voltage - Off State: 600 V
- Current - On State (It (RMS)) (Max): 25 A
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
- Current - Gate Trigger (Igt) (Max): 35 mA
- Current - Hold (Ih) (Max): 50 mA
- Configuration: Single
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
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封装: - |
库存1,500 |
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IXYS |
SCR 3.6KV 3360A W70
- Voltage - Off State: 3.6 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 3 V
- Current - On State (It (AV)) (Max): 1725 A
- Current - On State (It (RMS)) (Max): 3360 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W70
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封装: - |
Request a Quote |
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