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IXYS |
IGBT 1000V 20A 100W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): 40A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
- Power - Max: 100W
- Switching Energy: 2mJ (off)
- Input Type: Standard
- Gate Charge: 52nC
- Td (on/off) @ 25°C: 100ns/550ns
- Test Condition: 800V, 10A, 150 Ohm, 15V
- Reverse Recovery Time (trr): 60ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存4,352 |
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IXYS |
IGBT 2500V 32A 250W I4PAC
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 2500V
- Current - Collector (Ic) (Max): 32A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
- Power - Max: 250W
- Switching Energy: 15mJ (on), 30mJ (off)
- Input Type: Standard
- Gate Charge: 142nC
- Td (on/off) @ 25°C: -
- Test Condition: 1500V, 19A, 47 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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封装: i4-Pac?-5 (3 leads) |
库存8,016 |
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IXYS |
MOSFET N-CH 500V 22A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 350W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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封装: TO-220-3, Short Tab |
库存2,512 |
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IXYS |
MOSFET N-CH 1100V 35A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1100V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存5,008 |
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IXYS |
MOSFET N-CH 1500V 2A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 8.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 15 Ohm @ 1A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存3,296 |
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IXYS |
MOSFET N-CH 600V 30A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存2,288 |
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IXYS |
MOSFET N-CH 40V 160A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存4,688 |
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IXYS |
MOSFET N-CH 250V 44A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,448 |
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IXYS |
MOSFET N-CH 200V 60A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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封装: TO-3P-3, SC-65-3 |
库存6,512 |
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IXYS |
MOSFET N-CH 1KV 21A TO264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXFK)
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存6,240 |
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IXYS |
THYRISTOR PHASE 1200V TO-220AB
- Voltage - Off State: 1200V
- Voltage - Gate Trigger (Vgt) (Max): 1.3V
- Current - Gate Trigger (Igt) (Max): 30mA
- Voltage - On State (Vtm) (Max): 1.59V
- Current - On State (It (AV)) (Max): 30A
- Current - On State (It (RMS)) (Max): 47A
- Current - Hold (Ih) (Max): 60mA
- Current - Off State (Max): 10µA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存4,800 |
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IXYS |
SCR THYRISTOR SGL 1600V WC-800
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: WC-800
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封装: WC-800 |
库存3,568 |
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IXYS |
MOD THYRISTOR/DIO 800V TO-240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 115A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存7,280 |
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IXYS |
DIODE SCHOTTKY 180V 15A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 180V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.3mA @ 180V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-220-2 |
库存7,648 |
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IXYS |
DIODE GEN PURP 1.2KV 10A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 60µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-220-2 |
库存50,520 |
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IXYS |
DIODE SCHOTTKY 45V 60A TO247AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 150°C
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封装: TO-247-2 |
库存5,376 |
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IXYS |
DIODE MODULE 64KV 3.4A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 64000V
- Current - Average Rectified (Io) (per Diode): 3.4A
- Voltage - Forward (Vf) (Max) @ If: 46V @ 12A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 64000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: Module |
库存3,824 |
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IXYS |
DIODE MODULE 8V 200A SOT227B
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 8V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 340mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400mA @ 8V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: SOT-227-4, miniBLOC |
库存5,840 |
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IXYS |
DIODE ARRAY SCHOTTKY 100V TO227
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 80A
- Voltage - Forward (Vf) (Max) @ If: 940mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 100V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存6,976 |
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IXYS |
DIODE BRIDGE 124A 800V PWS-C
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 124A
- Voltage - Forward (Vf) (Max) @ If: 1.07V @ 50A
- Current - Reverse Leakage @ Vr: 200µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-C
- Supplier Device Package: PWS-C
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封装: PWS-C |
库存5,568 |
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IXYS |
RECT BRIDGE 3PH 63A 1400V PWS-D
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 63A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1400V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-D
- Supplier Device Package: PWS-D
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封装: PWS-D |
库存5,552 |
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IXYS |
IC DRIVER MOSF/IGBT HALF 8-SOIC
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SOIC
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封装: 8-SOIC |
库存2,928 |
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IXYS |
IC MOSFET DRVR LS 8A SGL 5TO-263
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 25 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 8A, 8A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14ns, 15ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
- Supplier Device Package: TO-263 (D2Pak)
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封装: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
库存13,860 |
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IXYS |
IC CURRENT REGULATOR DPAK
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 2mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,280 |
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IXYS |
15A, 15V MOSFET DRIVER
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 8 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 15A, 15A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 4ns, 4ns
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-SMD
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封装: 6-SMD, Flat Leads |
库存7,524 |
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IXYS |
SCR 600V 1713A W58
- Voltage - Off State: 600 V
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 200 mA
- Voltage - On State (Vtm) (Max): 1.47 V
- Current - On State (It (AV)) (Max): 848 A
- Current - On State (It (RMS)) (Max): 1713 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 50 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: W58
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封装: - |
Request a Quote |
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IXYS |
SCR 400V 4190A WP1
- Voltage - Off State: 400 V
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 1.58 V
- Current - On State (It (AV)) (Max): 2154 A
- Current - On State (It (RMS)) (Max): 4190 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 140°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: WP1
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 4.2KV 3120A W54
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4200 V
- Current - Average Rectified (Io): 3120A
- Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W54
- Operating Temperature - Junction: -40°C ~ 160°C
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封装: - |
Request a Quote |
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