页 38 - IXYS 产品 | 黑森尔电子
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IXYS 产品

记录 5,468
页  38/196
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IXGP16N60B2D1
IXYS

IGBT 600V 40A 150W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 18ns/73ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,120
IXGH60N60B2
IXYS

IGBT 600V 75A 500W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 500W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 28ns/160ns
  • Test Condition: 400V, 50A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存5,776
hot IXGH40N60B2D1
IXYS

IGBT 600V 75A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 18ns/130ns
  • Test Condition: 400V, 30A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存153,540
hot IXYH30N450HV
IXYS

IGBT 4500V 30A TO-247HV

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 4500V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
  • Power - Max: 430W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 960V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247HV
封装: TO-247-3 Variant
库存5,360
IXGL200N60B3
IXYS

IGBT 600V 150A 400W ISOPLUS264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
  • Power - Max: 400W
  • Switching Energy: 1.6mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 750nC
  • Td (on/off) @ 25°C: 44ns/310ns
  • Test Condition: 300V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS264?
  • Supplier Device Package: ISOPLUS264?
封装: ISOPLUS264?
库存7,360
IXXH75N60C3D1
IXYS

IGBT 600V 150A 750W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 750W
  • Switching Energy: 1.6mJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 107nC
  • Td (on/off) @ 25°C: 35ns/90ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存6,784
MKI65-06A7T
IXYS

IGBT H-BRIDGE 600V E2PACK

  • IGBT Type: -
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
封装: E2
库存3,408
MIAA15WB600TMH
IXYS

MODULE IGBT CBI

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Power - Max: 80W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 0.7nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MiniPack2
  • Supplier Device Package: MiniPack2
封装: MiniPack2
库存5,408
IXFK100N10
IXYS

MOSFET N-CH 100V 100A TO-264AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
封装: TO-264-3, TO-264AA
库存7,920
IXFP20N85X
IXYS

850V/20A ULTRA JUNCTION X-CLASS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存4,592
hot IXFX80N50P
IXYS

MOSFET N-CH 500V 80A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存3,872
IXTT16N20D2
IXYS

MOSFET N-CH 200V 16A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 208nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 695W (Tc)
  • Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存6,720
CS8-12IO2
IXYS

SCR PHASE CONTROL 1200V 16A TO64

  • Voltage - Off State: 1200V
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 30mA
  • Voltage - On State (Vtm) (Max): 1.6V
  • Current - On State (It (AV)) (Max): 16A
  • Current - On State (It (RMS)) (Max): 25A
  • Current - Hold (Ih) (Max): 80mA
  • Current - Off State (Max): 3mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 270A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: TO-208AB, TO-64-3, Stud
  • Supplier Device Package: TO-64
封装: TO-208AB, TO-64-3, Stud
库存4,832
MCD250-14IO1
IXYS

MOD THYRISTOR/DIODE 1400V Y2-DCB

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 287A
  • Current - On State (It (RMS)) (Max): 450A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
  • Current - Hold (Ih) (Max): 150mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y2-DCB
封装: Y2-DCB
库存5,888
VTOF70-16IO7
IXYS

RECT BRIDGE 3PH 1600V FO-T-A

  • Structure: Bridge, 3-Phase - All SCRs
  • Number of SCRs, Diodes: 6 SCRs
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 70A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
封装: FO-T-A
库存6,176
hot DSEP8-06A
IXYS

DIODE GEN PURP 600V 10A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 60µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-220-2
库存82,644
HTZ130B28K
IXYS

DIODE MODULE 28KV 1A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 28000V
  • Current - Average Rectified (Io) (per Diode): 1A
  • Voltage - Forward (Vf) (Max) @ If: 24V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 28000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存6,112
hot DSP8-12A
IXYS

DIODE ARRAY GP 1200V 11A TO220AB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 11A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存90,636
VBO55-18NO7
IXYS

DIODE BRIDGE 1800V 55A FO-T-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 55A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
  • Current - Reverse Leakage @ Vr: 500µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
  • Supplier Device Package: FO-T-A
封装: FO-T-A
库存2,384
hot VUO52-18NO1
IXYS

RECT BRIDGE 3PH 54A 1800V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 54A
  • Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A
  • Current - Reverse Leakage @ Vr: 40µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
封装: V1-A
库存6,192
hot IXDI409CI
IXYS

IC MOSFET DRVR 9A LOSIDE TO220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
封装: TO-220-5
库存17,328
IXBOD1-40R
IXYS

IC DIODE MODULE BOD 0.7A 4000V

  • Voltage - Clamping: 4000V (4kV)
  • Technology: Mixed Technology
  • Number of Circuits: 4
  • Number of Circuits: 4
  • Applications: High Voltage
  • Mounting Type: PCB, Through Hole
  • Package / Case: Radial
  • Supplier Device Package: BOD
封装: Radial
库存6,930
IXYP10N65B3D1
IXYS

IGBT PT 650V 32A TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 32 A
  • Current - Collector Pulsed (Icm): 62 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
  • Power - Max: 160 W
  • Switching Energy: 300µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 20 nC
  • Td (on/off) @ 25°C: 17ns/125ns
  • Test Condition: 400V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: -
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IXTP20N65X2
IXYS

MOSFET N-CH 650V 20A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: -
库存837
IXYK30N170CV1
IXYS

DISC IGBT XPT-HI VOLTAGE TO-264(

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 250 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
  • Power - Max: 937 W
  • Switching Energy: 3.6mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 16ns/143ns
  • Test Condition: 850V, 30A, 2.7Ohm, 15V
  • Reverse Recovery Time (trr): 33 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXYK)
封装: -
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DSSK18-0025BS-TRL
IXYS

DIODE ARR SCHOTT 25V 10A TO263AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 25 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 25 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
封装: -
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IXTA220N04T2
IXYS

MOSFET N-CH 40V 220A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
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IXFP50N20X3
IXYS

DISCMSFT NCHULTRJNCTX3CLASS TO-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3 (IXFP)
  • Package / Case: TO-220-3
封装: -
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