页 52 - Infineon Technologies 产品 - 晶体管 - UGBT，MOSFET - 单

图片	零件编号	制造商	描述	封装	库存	数量	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	IRGP4263D1-EPBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 192A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A Power - Max: 325W Switching Energy: 2.9mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封装: TO-247-3	库存7,456		650V	90A	192A	2.1V @ 15V, 48A	325W	2.9mJ (on), 1.4mJ (off)	Standard	145nC	70ns/140ns	400V, 48A, 10 Ohm, 15V	170ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247