页 129 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRG5U200HF12B	Infineon Technologies	MOD IGBT 1200V 200A POWIR 62 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 285A Power - Max: 1250W Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 200A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 22.7nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 62 Module Supplier Device Package: POWIR? 62	封装: POWIR? 62 Module	库存3,520
BSO080P03SNTMA1	Infineon Technologies	MOSFET P-CH 30V 12.6A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.79W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,120
IPB08CN10N G	Infineon Technologies	MOSFET N-CH 100V 95A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 95A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存6,208
IRF9520NSPBF	Infineon Technologies	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存60,984
IPP80CN10NGHKSA1	Infineon Technologies	MOSFET N-CH 100V 13A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存3,136
IRFS33N15D	Infineon Technologies	MOSFET N-CH 150V 33A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存6,012
IPC65R070C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存3,824
IPW60R280E6	Infineon Technologies	MOSFET N-CH 600V 13.8A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封装: TO-247-3	库存106,344
IRFZ46NPBF	Infineon Technologies	MOSFET N-CH 55V 53A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存418,788
BSC030P03NS3 G	Infineon Technologies	MOSFET P-CH 30V 100A TDSON-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 345µA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存514,242
IRLML6346TRPBF	Infineon Technologies	MOSFET N-CH 30V 3.4A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 24V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3?/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存2,825,616
IKCM10H60GAXKMA1	Infineon Technologies	IFPS MODULES Type: IGBT Configuration: 3 Phase Current: 10A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	封装: 24-PowerDIP Module (1.028", 26.10mm)	库存5,840
IRD3CH82DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 150A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 355ns Current - Reverse Leakage @ Vr: 3µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C	封装: Die	库存6,000
BGS 12A TR E6327	Infineon Technologies	IC SWITCH RF SPDT FWLP-6-1 Frequency - Lower: 100MHz Frequency - Upper: 3GHz Isolation @ Frequency: 27dB @ 2GHz Insertion Loss @ Frequency: 0.6dB @ 2GHz IIP3: - Topology: Reflective Circuit: SPDT P1dB: - Features: DC Blocked, Single Line Control Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: General Purpose Package / Case: 6-XFBGA, WLCSP Supplier Device Package: FWLP-6	封装: 6-XFBGA, WLCSP	库存8,118
38DN06ELEMPRXPSA1	Infineon Technologies	DIODE GP 600V 5095A E-EUPEC-0 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5095A Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: E-EUPEC-0 Operating Temperature - Junction: 180°C (Max)	封装: -	Request a Quote
S70FL01GSAGBHVC13	Infineon Technologies	IC FLASH 1GBIT SPI/QUAD 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封装: -	Request a Quote
SAF-XC164N-8F40FBB	Infineon Technologies	IC MCU 16BIT 64KB FLASH 100TQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 40MHz Connectivity: EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 79 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 6K x 8 Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Data Converters: - Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: PG-TQFP-100-5	封装: -	Request a Quote
FS100R17N3E4B11BOSA1	Infineon Technologies	IGBT MOD 1700V 100A 600W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 100 A Power - Max: 600 W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存30
F450R12KS4BOSA1	Infineon Technologies	IGBT MOD 1200V 70A 355W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 70 A Power - Max: 355 W Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote
IPDQ65R060CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 820µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封装: -	库存2,235
IDWD10G120C5XKSA1	Infineon Technologies	DIODE SIL CARB 1.2KV 34A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 34A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 80 µA @ 1200 V Capacitance @ Vr, F: 730pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: PG-TO247-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote
ISC046N13NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote
CY9AFB42LAPMC-G-JNE2	Infineon Technologies	MULTI-MARKET MCUS Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, I2C, UART/USART, USB Peripherals: DMA, LCD, LVD, POR, PWM, WDT Number of I/O: 51 Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 12x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (12x12)	封装: -	Request a Quote
IPDD60R150G7XTMA1	Infineon Technologies	MOSFET N-CH 600V 16A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	封装: -	库存60
ITD50N04S4L07ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 18µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Power - Max: 46W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5-311	封装: -	Request a Quote
CY7C60123-PXC	Infineon Technologies	IC MCU 8BIT 8KB FLASH 40DIP Core Processor: M8C Core Size: 8-Bit Speed: 12MHz Connectivity: SPI Peripherals: LVD, POR, WDT Number of I/O: 36 Program Memory Size: 8KB (8K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 256 x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Data Converters: - Oscillator Type: Internal Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 40-DIP (0.600", 15.24mm) Supplier Device Package: 40-PDIP	封装: -	Request a Quote
BSM50GX120DN2BOSA1	Infineon Technologies	IGBT MODULE 2 LOW PWR ECONO2-2 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
PEB2070NV2-4	Infineon Technologies	ISDN COMMUNICATIONS CONTROLLER Function: ISDN Interface: ISDN, Serial Number of Circuits: 1 Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 8mA Power (Watts): - Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 28-LCC (J-Lead) Supplier Device Package: PG-LCC-28-R	封装: -	Request a Quote

IRG5U200HF12B

Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 285A
Power - Max: 1250W
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 200A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 22.7nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 62 Module
Supplier Device Package: POWIR? 62

封装: POWIR? 62 Module

库存3,520

BSO080P03SNTMA1

Infineon Technologies

MOSFET P-CH 30V 12.6A 8DSO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,120

IPB08CN10N G

Infineon Technologies

MOSFET N-CH 100V 95A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 95A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存6,208

IRF9520NSPBF

Infineon Technologies

MOSFET P-CH 100V 6.8A D2PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存60,984

IPP80CN10NGHKSA1

Infineon Technologies

MOSFET N-CH 100V 13A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存3,136

IRFS33N15D

Infineon Technologies

MOSFET N-CH 150V 33A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存6,012

IPC65R070C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存3,824

IPW60R280E6

Infineon Technologies

MOSFET N-CH 600V 13.8A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封装: TO-247-3

库存106,344

IRFZ46NPBF

Infineon Technologies

MOSFET N-CH 55V 53A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存418,788

BSC030P03NS3 G

Infineon Technologies

MOSFET P-CH 30V 100A TDSON-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.1V @ 345µA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 15V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存514,242

IRLML6346TRPBF

Infineon Technologies

MOSFET N-CH 30V 3.4A SOT23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 24V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Micro3?/SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存2,825,616

IKCM10H60GAXKMA1

Infineon Technologies

IFPS MODULES

Type: IGBT
Configuration: 3 Phase
Current: 10A
Voltage: 600V
Voltage - Isolation: 2000Vrms
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)

封装: 24-PowerDIP Module (1.028", 26.10mm)

库存5,840

IRD3CH82DB6

Infineon Technologies

DIODE GEN PURP 1.2KV 150A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 355ns
Current - Reverse Leakage @ Vr: 3µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C

封装: Die

库存6,000

BGS 12A TR E6327

Infineon Technologies

IC SWITCH RF SPDT FWLP-6-1

Frequency - Lower: 100MHz
Frequency - Upper: 3GHz
Isolation @ Frequency: 27dB @ 2GHz
Insertion Loss @ Frequency: 0.6dB @ 2GHz
IIP3: -
Topology: Reflective
Circuit: SPDT
P1dB: -
Features: DC Blocked, Single Line Control
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4 V ~ 3.6 V
RF Type: General Purpose
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: FWLP-6

封装: 6-XFBGA, WLCSP

库存8,118

38DN06ELEMPRXPSA1

Infineon Technologies

DIODE GP 600V 5095A E-EUPEC-0

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5095A
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)

封装: -

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S70FL01GSAGBHVC13

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封装: -

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SAF-XC164N-8F40FBB

Infineon Technologies

IC MCU 16BIT 64KB FLASH 100TQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 40MHz
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 79
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 6K x 8
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Data Converters: -
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: PG-TQFP-100-5

封装: -

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FS100R17N3E4B11BOSA1

Infineon Technologies

IGBT MOD 1700V 100A 600W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 600 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存30

F450R12KS4BOSA1

Infineon Technologies

IGBT MOD 1200V 70A 355W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Power - Max: 355 W
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

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IPDQ65R060CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封装: -

库存2,235

IDWD10G120C5XKSA1

Infineon Technologies

DIODE SIL CARB 1.2KV 34A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 34A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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ISC046N13NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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CY9AFB42LAPMC-G-JNE2

Infineon Technologies

MULTI-MARKET MCUS

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Number of I/O: 51
Program Memory Size: 160KB (160K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 12x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (12x12)

封装: -

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IPDD60R150G7XTMA1

Infineon Technologies

MOSFET N-CH 600V 16A HDSOP-10

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-10-1
Package / Case: 10-PowerSOP Module

封装: -

库存60

ITD50N04S4L07ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Power - Max: 46W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5-311

封装: -

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CY7C60123-PXC

Infineon Technologies

IC MCU 8BIT 8KB FLASH 40DIP

Core Processor: M8C
Core Size: 8-Bit
Speed: 12MHz
Connectivity: SPI
Peripherals: LVD, POR, WDT
Number of I/O: 36
Program Memory Size: 8KB (8K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 256 x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Data Converters: -
Oscillator Type: Internal
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Supplier Device Package: 40-PDIP

封装: -

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BSM50GX120DN2BOSA1

Infineon Technologies

IGBT MODULE 2 LOW PWR ECONO2-2

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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PEB2070NV2-4

Infineon Technologies

ISDN COMMUNICATIONS CONTROLLER

Function: ISDN
Interface: ISDN, Serial
Number of Circuits: 1
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Power (Watts): -
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Supplier Device Package: PG-LCC-28-R

封装: -

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