Infineon Technologies 产品

IPB60R600CPATMA1

Infineon Technologies

MOSFET N-CH 600V 6.1A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 220µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB065N06L G

Infineon Technologies

MOSFET N-CH 60V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 180µA
• Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFL4310PBF

Infineon Technologies

MOSFET N-CH 100V 1.6A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

IRF7807VD2TR

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IPD30N12S3L31ATMA1

Infineon Technologies

MOSFET N-CHANNEL_100+

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IPU60R3K4CEAKMA1

Infineon Technologies

CONSUMER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IPD90N04S405ATMA1

Infineon Technologies

MOSFET N-CH 40V 86A TO252-3-313

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2960pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 65W (Tc)
• Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 86A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-313
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFH7932TRPBF

Infineon Technologies

MOSFET N-CH 30V 24A PQFN56

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.4W (Ta)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6) Single Die
• Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

IRF3717TRPBF

Infineon Technologies

MOSFET N-CH 20V 20A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IPP110N20N3 G

Infineon Technologies

MOSFET N-CH 200V 88A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 88A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

BCX42E6433HTMA1

Infineon Technologies

TRANS PNP 125V 0.8A SOT-23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 125V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
• Current - Collector Cutoff (Max): 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 150MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

BCR 148F B6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

封装: SOT-723

BCR108WH6433XTMA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 170MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

TLE6389-2GV

Infineon Technologies

IC REG CTRLR BUCK 14DSO

• Output Type: Transistor Driver
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 5 V ~ 60 V
• Frequency - Switching: 360kHz
• Duty Cycle (Max): 100%
• Synchronous Rectifier: Yes
• Clock Sync: Yes
• Serial Interfaces: -
• Control Features: Current Limit, Enable, Reset
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-DSO

封装: 14-SOIC (0.154", 3.90mm Width)

BTS50085-1TMA

Infineon Technologies

IC SWITCH PWR HISIDE TO220-7

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 58 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 38A
• Rds On (Typ): 7.2 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO220-7

封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

IRS2332B

Infineon Technologies

IC GATE DRIVER HVIC DIE

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IR2235S

Infineon Technologies

IC DRIVER 3-PHASE BRIDGE 28-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 90ns, 40ns
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.295", 7.50mm Width)

PEF 24902 H V2.1

Infineon Technologies

IC NETWORK TERMINATOR MQFP-64

• Function: Echo Cancellation
• Interface: ISDN
• Number of Circuits: 4
• Voltage - Supply: 7V
• Current - Supply: 1mA
• Power (Watts): 840mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: P-64-MQFP

封装: 64-QFP

T830N18TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 1500A DO200AB

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 844 A
• Current - On State (It (RMS)) (Max): 1500 A
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK

封装: -

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BTS700121ESPXUMA2

Infineon Technologies

PROFET PG-TSDSO-24

• Switch Type: Relay, Solenoid Driver
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: -
• Voltage - Load: 4.1V ~ 28V
• Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
• Current - Output (Max): 31.3A
• Rds On (Typ): 1.4mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-24-32

封装: -

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P2000DL45X168HPSA1

Infineon Technologies

PRESS PACK IGBT

• IGBT Type: Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 4500 V
• Current - Collector (Ic) (Max): 2000 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2000A
• Current - Collector Cutoff (Max): 200 µA
• Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF
• Supplier Device Package: BG-P16826K-1

封装: -

CY8C624ABZI-S2D14T

Infineon Technologies

IC MCU 32BIT 2MB FLASH 124VFBGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 100
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 32K x 8
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 124-VFBGA
• Supplier Device Package: 124-VFBGA (9x9)

封装: -

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28329184C

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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TLD5097EPXUMA1

Infineon Technologies

IC LED DRV CTRL PWM 90MA 14TSDSO

• Type: DC DC Controller
• Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 4.5V
• Voltage - Supply (Max): 45V
• Voltage - Output: 4.5V ~ 5.5V
• Current - Output / Channel: 90mA
• Frequency: 100kHz ~ 500kHz
• Dimming: Analog, PWM
• Applications: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-14

封装: -

S27KL0643GABHB023

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

封装: -

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IPW65R035CFD7AXKSA1

Infineon Technologies

MOSFET N-CH 650V 63A TO247-3-41

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
• Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 305W (Tc)
• Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-41
• Package / Case: TO-247-3

封装: -

CY7C65223-24LTXI

Infineon Technologies

USB FULL-SPEED PERIPHERALS

• Protocol: USB
• Function: Bridge
• Interface: GPIO, UART
• Standards: USB 2.0
• Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V
• Current - Supply: 20mA
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

封装: -

IAUTN12S5N017ATMA1

Infineon Technologies

MOSFET_(120V 300V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-1
• Package / Case: 8-PowerSFN

封装: -