页 144 - Infineon Technologies 产品 | 黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  144/567
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hot IRFSL4229PBF
Infineon Technologies

MOSFET N-CH 250V 45A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 26A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存33,000
hot IRF7433PBF
Infineon Technologies

MOSFET P-CH 12V 8.9A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1877pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存82,200
AUIRF1324STRL
Infineon Technologies

MOSFET N-CH 24V 195A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7590pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.65 mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,912
BSZ150N10LS3GATMA1
Infineon Technologies

MOSFET N-CH 100V 40A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 33µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存2,016
hot IRLMS1902TRPBF
Infineon Technologies

MOSFET N-CH 20V 3.2A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(TSOP-6)
  • Package / Case: SOT-23-6
封装: SOT-23-6
库存1,606,284
hot IRFL024ZTRPBF
Infineon Technologies

MOSFET N-CH 55V 5.1A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存1,393,404
IRU1205-33CLTR
Infineon Technologies

IC REG LINEAR 3.3V 300MA SOT23-5

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 10V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.4V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
封装: SC-74A, SOT-753
库存5,184
TLS208D1EJVXUMA1
Infineon Technologies

IC REG LINEAR POS ADJ 800MA 8DSO

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 18V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 5.25V
  • Voltage Dropout (Max): 1.2V @ 800mA
  • Current - Output: 800mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 170µA ~ 250µA
  • PSRR: 62dB (10kHz)
  • Control Features: Enable, Reset
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-DSO-8, e-Pad
封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
库存24,258
CDM10VD4XTSA1
Infineon Technologies

IC DIMMER FLEXIBLE SOT23-6

  • Applications: Dimming Controller
  • Current - Supply: -
  • Voltage - Supply: 11 V ~ 25 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,384
hot IRS21864PBF
Infineon Technologies

IC DRIVER HI/LO SIDE 600V 14-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 22ns, 18ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
封装: 14-DIP (0.300", 7.62mm)
库存6,528
TDA21242AUMA1
Infineon Technologies

IC POWERSTAGE DRIVER 30IQFN

  • Output Configuration: Half Bridge
  • Applications: Synchronous Buck Converters
  • Interface: PWM
  • Load Type: Inductive
  • Technology: Power MOSFET
  • Rds On (Typ): -
  • Current - Output / Channel: 25A
  • Current - Peak Output: -
  • Voltage - Supply: 4.5 V ~ 7 V
  • Voltage - Load: 4.5 V ~ 16 V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: Over Temperature, Shoot-Through, UVLO
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,256
TC1797512F180EFACKXUMA1
Infineon Technologies

IC MCU 32BIT 4MB FLASH 416BGA

  • Core Processor: TriCore?
  • Core Size: 32-Bit
  • Speed: 180MHz
  • Connectivity: ASC, CAN, EBI/EMI, FlexRay, MLI, MSC, SSC
  • Peripherals: DMA, POR, WDT
  • Number of I/O: 221
  • Program Memory Size: 4MB (4M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 64K x 8
  • RAM Size: 224K x 8
  • Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
  • Data Converters: A/D 4x10b, 44x12b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 416-BGA
  • Supplier Device Package: PG-BGA-416-27
封装: 416-BGA
库存7,120
XMC1404Q048X0064AAXUMA1
Infineon Technologies

IC MCU 32BIT 64KB FLASH 48VQFN

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: CAN, I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
  • Number of I/O: 34
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 12x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-73
封装: 48-VFQFN Exposed Pad
库存6,288
ESD311U102NE6327XTSA1
Infineon Technologies

TVS DIODE 15VWM 35VC PGTSNP2

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 15V (Max)
  • Voltage - Breakdown (Min): 16V
  • Voltage - Clamping (Max) @ Ipp: 35V
  • Current - Peak Pulse (10/1000µs): 28A (8/20µs)
  • Power - Peak Pulse: 800W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 210pF @ 1MHz
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: TSNP-2-2
封装: 2-XDFN
库存3,294
ISC025N08NM5LF2ATMA1
Infineon Technologies

OPTIMOSTM5LINEARFET80V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 115µA
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 217W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
封装: -
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F4100R17ME4B11BPSA1
Infineon Technologies

IGBT MODULE 1700V 155A

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 155 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
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IRF100P219XKMA1
Infineon Technologies

MOSFET N-CH 100V TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 278µA
  • Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 341W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
封装: -
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SIGC07T60NCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 6A, 54Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
CY9BF124MBGL-GK9E1
Infineon Technologies

IC MCU 32BIT 288KB FLASH 96FBGA

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit Single-Core
  • Speed: 72MHz
  • Connectivity: CSIO, I2C, LINbus, UART/USART
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 60
  • Program Memory Size: 288KB (288K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 26x12b; D/A 2x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 96-LFBGA
  • Supplier Device Package: 96-FBGA (6x6)
封装: -
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FP35R12KT4B11BOSA1
Infineon Technologies

IGBT MOD 1200V 35A 210W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: 210 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
IPB014N04NF2SATMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 126µA
  • Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存1,848
FP75R12KT4BOSA1
Infineon Technologies

IGBT MOD 1200V 75A 385W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 385 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
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S25FL128SAGBHEA03
Infineon Technologies

IC FLASH 128MBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
封装: -
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CG7624AM
Infineon Technologies

SEMICONDUCTOR OTHER

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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CYT4BF8CDDQ0AEEGST
Infineon Technologies

IC MCU 32BT 8.1875MB FLSH 176QFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Quad-Core
  • Speed: 100MHz, 350MHz
  • Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
  • Number of I/O: 148
  • Program Memory Size: 8.1875MB (8.1875M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 256 x 8
  • RAM Size: 1M x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 99x12b SAR
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 176-LQFP Exposed Pad
  • Supplier Device Package: 176-TEQFP (24x24)
封装: -
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CY8C4147LQS-S253T
Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
  • Number of I/O: 34
  • Program Memory Size: 128KB (128K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 20x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 40-UFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
封装: -
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DDB6U100N16RBOSA1
Infineon Technologies

DIODE GP 1.6KV 104A AG-ECONO2A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 104A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2A
  • Operating Temperature - Junction: 150°C
封装: -
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DF200R12PT4B6BOSA1
Infineon Technologies

IGBT MOD 1200V 300A 1100W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 300 A
  • Power - Max: 1100 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
  • Current - Collector Cutoff (Max): 15 µA
  • Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
BAS70-04B5000
Infineon Technologies

DIODE ARR SCHOT 70V 70MA SOT23-3

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-3
封装: -
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IDP06E60XKSA1
Infineon Technologies

DIODE GP 600V 14.7A TO220-2-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 14.7A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
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