页 165 - Infineon Technologies 产品 | 黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  165/607
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hot IRG4RC10SDPBF
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存126,600
IRGP4263DPBF
Infineon Technologies

IGBT 650V 90A 325W TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 192A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
  • Power - Max: 325W
  • Switching Energy: 2.9mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 70ns/140ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存7,728
hot AUIRFS3004-7P
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
封装: TO-263-7, D2Pak (6 Leads + Tab)
库存36,000
IPB26CNE8N G
Infineon Technologies

MOSFET N-CH 85V 35A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 39µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,704
IRFB42N20D
Infineon Technologies

MOSFET N-CH 200V 44A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存2,656
BSS119NH6433XTMA1
Infineon Technologies

MOSFET N-CH 100V 0.19A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20.9pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 190mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存6,944
BSC009NE2LS5IATMA1
Infineon Technologies

MOSFET N-CH 25V 40A 8TDSON IND

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存52,188
PXFC212551SCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,440
BC 857BT E6327
Infineon Technologies

TRANS PNP 45V 0.1A SC-75

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封装: SC-75, SOT-416
库存3,840
BCW68GE6327HTSA1
Infineon Technologies

TRANS PNP 45V 0.8A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存6,896
BCR08PNH6327XTSA1
Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 170MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
封装: 6-VSSOP, SC-88, SOT-363
库存7,584
BB565H7903XTMA1
Infineon Technologies

DIODE VAR CAP 30V 20MA SCD80

  • Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
  • Capacitance Ratio: 11
  • Capacitance Ratio Condition: C1/C28
  • Voltage - Peak Reverse (Max): 30V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
封装: SC-80
库存3,584
TLE4274GV50ATMA2
Infineon Technologies

IC REG LINEAR 5V 400MA TO263-3

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 250mA
  • Current - Output: 400mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 220µA ~ 30mA
  • PSRR: 60dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Supplier Device Package: PG-TO263-3-1
封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
库存3,680
BSP77E6433HUMA1
Infineon Technologies

IC SWITCH POWER LOSIDE SOT223-4

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 42V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.17A
  • Rds On (Typ): 70 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
封装: TO-261-4, TO-261AA
库存5,568
IRSM515-055PA
Infineon Technologies

IC MOTOR DRIVER 500V 23SOP

  • Output Configuration: Half Bridge (3)
  • Applications: AC Motors
  • Interface: Logic
  • Load Type: Inductive
  • Technology: UMOS
  • Rds On (Typ): 1.3 Ohm
  • Current - Output / Channel: 2.4A
  • Current - Peak Output: 15A
  • Voltage - Supply: 13.5 V ~ 16.5 V
  • Voltage - Load: 400V (Max)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: UVLO
  • Mounting Type: Surface Mount
  • Package / Case: 32-PowerSMD Module, 23 Leads
  • Supplier Device Package: 23-SOP
封装: 32-PowerSMD Module, 23 Leads
库存7,936
SAK-TC1775-L40E BA
Infineon Technologies

IC MCU 32BIT 8KB ROM 329BGA

  • Core Processor: TriCore?
  • Core Size: 32-Bit
  • Speed: 40MHz
  • Connectivity: CAN, EBI/EMI, SDLM, SSC, UART/USART
  • Peripherals: POR, WDT
  • Number of I/O: 176
  • Program Memory Size: 8KB (8K x 8)
  • Program Memory Type: ROM
  • EEPROM Size: -
  • RAM Size: 73K x 8
  • Voltage - Supply (Vcc/Vdd): 2.3 V ~ 2.75 V
  • Data Converters: A/D 32x12b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 329-BBGA
  • Supplier Device Package: 329-PBGA (31x31)
封装: 329-BBGA
库存2,896
C515C8EMCAFXQMA1
Infineon Technologies

IC MCU 8BIT 64KB OTP 80MQFP

  • Core Processor: C500
  • Core Size: 8-Bit
  • Speed: 10MHz
  • Connectivity: CAN, EBI/EMI, SPI, UART/USART
  • Peripherals: POR, PWM, WDT
  • Number of I/O: 49
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: OTP
  • EEPROM Size: -
  • RAM Size: 2.5K x 8
  • Voltage - Supply (Vcc/Vdd): 4.25 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 80-QFP
  • Supplier Device Package: 80-MQFP (14x14)
封装: 80-QFP
库存14,874
TVS3V3L4UE6327HTSA1
Infineon Technologies

TVS DIODE 3.3VWM 7.7VC SC74

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: 2
  • Voltage - Reverse Standoff (Typ): 3.3V (Max)
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
  • Current - Peak Pulse (10/1000µs): 20A (8/20µs)
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: Ethernet
  • Capacitance @ Frequency: 2pF @ 1MHz
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SC-74
封装: SC-74, SOT-457
库存135,768
IM393S6E2XKLA1
Infineon Technologies

POWER MODULE 600V 6A MDIP30

  • Type: IGBT
  • Configuration: 3 Phase Inverter
  • Current: 6 A
  • Voltage: 600 V
  • Voltage - Isolation: 2000Vrms
  • Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
封装: -
Request a Quote
S29GL01GS12DAE020
Infineon Technologies

IC FLASH 1GBIT CFI 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 120 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
封装: -
Request a Quote
IAUC100N04S6N028ATMA1
Infineon Technologies

IAUC100N04S6N028ATMA1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 24µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: -
库存30,174
CYAT81688-100AA71
Infineon Technologies

PSOC BASED - TRUETOUCH

  • Touchscreen: 2 Wire Capacitive
  • Resolution (Bits): -
  • Interface: I2C, SPI
  • Voltage Reference: -
  • Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
  • Current - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: -
库存2,700
CY15V108QI-20LPXCT
Infineon Technologies

IC FRAM 8MBIT SPI 20MHZ 8GQFN

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 8Mbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20 ns
  • Voltage - Supply: 1.71V ~ 1.89V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UQFN
  • Supplier Device Package: 8-GQFN (3.23x3.28)
封装: -
Request a Quote
TT142N14KOFHPSA1
Infineon Technologies

SCR MODULE 1.4KV 230A MODULE

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1.4 kV
  • Current - On State (It (AV)) (Max): 142 A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封装: -
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IPAN60R280P7SXKSA1
Infineon Technologies

MOSFET N-CH 650V 12A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 190µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
封装: -
库存1,110
IMD112T6F040XUMA1
Infineon Technologies

IMOTION

  • Motor Type - Stepper: Multiphase
  • Motor Type - AC, DC: AC, Synchronous
  • Function: Controller - Speed
  • Output Configuration: Half Bridge (3)
  • Interface: Serial, UART
  • Technology: IGBT
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: -
  • Voltage - Supply: 5.5V ~ 20V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-LQFP
  • Supplier Device Package: PG-LQFP-40-1
封装: -
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IPD70N12S311ATMA2
Infineon Technologies

MOSFET_(120V 300V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
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D970N06TXPSA1
Infineon Technologies

DIODE GEN PURP 600V 970A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 970A
  • Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: -
库存36