Infineon Technologies 产品

IRG4BC20SPBF

Infineon Technologies

IGBT 600V 19A 60W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 19A
• Current - Collector Pulsed (Icm): 38A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
• Power - Max: 60W
• Switching Energy: 120µJ (on), 2.05mJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 27ns/540ns
• Test Condition: 480V, 10A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

FS200R07A5E3S6BPSA1

Infineon Technologies

HYBRID PACK LIGHT

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRFSL4227PBF

Infineon Technologies

MOSFET N-CH 200V 62A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 46A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

BSO052N03S

Infineon Technologies

MOSFET N-CH 30V 14A 8DSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 70µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5530pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta)
• Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IPD09N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 58W (Tc)
• Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF540Z

Infineon Technologies

MOSFET N-CH 100V 36A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 92W (Tc)
• Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

IRL3715TR

Infineon Technologies

MOSFET N-CH 20V 54A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

IPB044N15N5ATMA1

Infineon Technologies

MV POWER MOS

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IPC60R199CPX1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IRF6794MTR1PBF

Infineon Technologies

MOSFET N-CH 25V 32A DIRECTFET-MX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

封装: DirectFET? Isometric MX

IPD053N06NATMA1

Infineon Technologies

MOSFET N-CH 60V 18A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 36µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7306TR

Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8-SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.6A
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

BCP6925H6327XTSA1

Infineon Technologies

TRANS PNP 20V 1A SOT223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
• Power - Max: 3W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

封装: TO-261-4, TO-261AA

BCR133SE6327BTSA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 130MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

IGCM15F60HAXKMA1

Infineon Technologies

IGBT 600V 24MDIP

• Type: IGBT
• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2000Vrms
• Package / Case: 24-PowerDIP Module (1.028", 26.10mm)

封装: 24-PowerDIP Module (1.028", 26.10mm)

IDC08S120EX7SA1

Infineon Technologies

DIODE SCHOTTKY 1200V 7.5A DIE

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 7.5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 180µA @ 1200V
• Capacitance @ Vr, F: 380pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 175°C

封装: Die

IDV30E65D2XKSA1

Infineon Technologies

DIODE GEN PURP 650V 30A TO220-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 42ns
• Current - Reverse Leakage @ Vr: 40µA @ 650V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: PG-TO220-2 Full Pack
• Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-220-2 Full Pack

IRU1015-33CT

Infineon Technologies

IC REG LINEAR 3.3V 1.5A TO220AB

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

TLS203B0LDVXUMA1

Infineon Technologies

IC REG LIN POS ADJ 300MA 10TSON

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 20V
• Voltage - Output (Min/Fixed): 1.22V
• Voltage - Output (Max): 20V
• Voltage Dropout (Max): 0.4 @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA ~ 12mA
• PSRR: 65dB (120Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 10-TFDFN Exposed Pad
• Supplier Device Package: PG-TSON-10

封装: 10-TFDFN Exposed Pad

IFX30081LDVGRNXUMA1

Infineon Technologies

IC REG LINEAR 50MA 10TSON

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 50mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 10-TFDFN Exposed Pad
• Supplier Device Package: PG-TSON-10

封装: 10-TFDFN Exposed Pad

6ED003L02F2XUMA1

Infineon Technologies

IC GATE DRVR 600V 3PHASE 28TSSOP

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 13 V ~ 17.5 V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): -
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 620V
• Rise / Fall Time (Typ): 60ns, 26ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-28

封装: 28-TSSOP (0.173", 4.40mm Width)

IRS2092CD

Infineon Technologies

IC AMP AUDIO CLASS D DIE

• Type: Class D
• Output Type: 2-Channel (Stereo)
• Max Output Power x Channels @ Load: -
• Voltage - Supply: 3.3V, 5V
• Features: -
• Mounting Type: -
• Operating Temperature: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IRS2092C

Infineon Technologies

IC AMP AUDIO CLASS D DIE

• Type: Class D
• Output Type: 2-Channel (Stereo)
• Max Output Power x Channels @ Load: -
• Voltage - Supply: 3.3V, 5V
• Features: -
• Mounting Type: -
• Operating Temperature: -
• Supplier Device Package: -
• Package / Case: -

封装: -

PEF 20954 HT V1.1

Infineon Technologies

IC ECHO CANCELLER DGTL TQFP144

• Function: Smart Integrated Digital Echo Canceller (SIDEC)
• Interface: PCM, Serial, UCC
• Number of Circuits: 1
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 350mA
• Power (Watts): 900mW
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 144-LQFP
• Supplier Device Package: P-TQFP-144

封装: 144-LQFP

ADM6996FCX-AC-T-1

Infineon Technologies

IC ETHERNET SW CTRLR 128QFP

• Protocol: Ethernet
• Function: Switch
• Interface: Parallel
• Standards: 10/100 Base-T/TX PHY
• Voltage - Supply: 2.8 V ~ 3.465 V
• Current - Supply: -
• Operating Temperature: 0°C ~ 115°C
• Package / Case: 128-BFQFP
• Supplier Device Package: PG-BFQFP-128

封装: 128-BFQFP

SAK-XE164GN-16F80L AA

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 18K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

封装: 100-LQFP Exposed Pad

SAK-XE167KM-72F80L AA

Infineon Technologies

IC MCU 16BIT 576KB FLASH 144LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 119
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 50K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-LQFP (20x20)

封装: 144-LQFP Exposed Pad

C167CRL33MHAKXQLA2

Infineon Technologies

IC MCU 16BIT ROMLESS 144MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: CAN, EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 112
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 144-BQFP
• Supplier Device Package: PG-MQFP-144

封装: 144-BQFP

IR3567AMAS04TRP

Infineon Technologies

IC REG BUCK 56VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IR3566AMIS02TRP

Infineon Technologies

IC REG BUCK 48VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -