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Infineon Technologies |
IGBT 1200V 9.6A 62.5W TO220-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 9.6A
- Current - Collector Pulsed (Icm): 9.9A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
- Power - Max: 62.5W
- Switching Energy: 290µJ
- Input Type: Standard
- Gate Charge: 22nC
- Td (on/off) @ 25°C: 9.2ns/281ns
- Test Condition: 800V, 3A, 82 Ohm, 15V
- Reverse Recovery Time (trr): 42ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,816 |
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Infineon Technologies |
IGBT 600V 28A 167W D2PAK
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 28A
- Current - Collector Pulsed (Icm): 34A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
- Power - Max: 167W
- Switching Energy: 160µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 29nC
- Td (on/off) @ 25°C: 23ns/140ns
- Test Condition: 400V, 8A, 50 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存192,000 |
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Infineon Technologies |
MOSFET N-CH 75V 230A D2PAK-7P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 160A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存36,000 |
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Infineon Technologies |
MOSFET N-CH 100V 11A TO220-5
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
库存5,120 |
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Infineon Technologies |
MOSFET N-CH 20V 50A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,144 |
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Infineon Technologies |
MOSFET N-CH 30V 24A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存59,064 |
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Infineon Technologies |
MOSFET P-CH 20V 7A 8-TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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封装: 8-TSSOP (0.173", 4.40mm Width) |
库存3,424 |
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Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存24,000 |
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Infineon Technologies |
MOSFET N-CH 55V 47A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,616 |
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Infineon Technologies |
MOSFET N-CH 55V 89A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,100 |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,344 |
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Infineon Technologies |
MOSFET N-CH 150V BARE DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Sawn on foil
- Package / Case: Die
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封装: Die |
库存2,944 |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,952 |
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Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 105µA
- Gate Charge (Qg) (Max) @ Vgs: 57.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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封装: 8-PowerTDFN |
库存7,680 |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9575pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存140,400 |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存194,580 |
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Infineon Technologies |
MOSFET N-CH DUAL 8V 25MA SOT363
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 800MHz
- Gain: 24dB
- Voltage - Test: 5V
- Current Rating: 25mA
- Noise Figure: 1.1dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 8V
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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封装: 6-VSSOP, SC-88, SOT-363 |
库存3,712 |
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Infineon Technologies |
DIODE TUNING 7V 20MA SOT-23
- Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
- Capacitance Ratio: 2.2
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 7V
- Diode Type: 1 Pair Common Cathode
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存7,232 |
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Infineon Technologies |
DIODE VAR CAP 30V 20MA SC79
- Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
- Capacitance Ratio: 11
- Capacitance Ratio Condition: C1/C28
- Voltage - Peak Reverse (Max): 30V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
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封装: SC-79, SOD-523 |
库存2,944 |
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Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 150A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
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封装: Die |
库存4,672 |
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Infineon Technologies |
IC REG LIN POS ADJ 300MA SOT23-5
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 10V
- Voltage - Output (Min/Fixed): 1.25V
- Voltage - Output (Max): 9.6V
- Voltage Dropout (Max): 0.4V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SOT-23-5
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封装: SC-74A, SOT-753 |
库存14,340 |
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Infineon Technologies |
IC REG LINEAR 3.3V 30MA SCT595-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.3V @ 20mA
- Current - Output: 30mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 170µA ~ 5.2mA
- PSRR: 60dB (100Hz)
- Control Features: Inhibit
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Gull Wing
- Supplier Device Package: PG-SCT595-5
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封装: 6-SMD (5 Leads), Gull Wing |
库存175,866 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH PDSO-20
- Switch Type: General Purpose
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.5 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 5.5A
- Rds On (Typ): 19 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: P-DSO-20
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封装: 20-SOIC (0.295", 7.50mm Width) |
库存6,656 |
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Infineon Technologies |
IC MOTOR DRIVER PAR TO220-7
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 70A
- Voltage - Supply: 8 V ~ 18 V
- Voltage - Load: 8 V ~ 18 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-7 (Formed Leads)
- Supplier Device Package: PG-TO220-7
|
封装: TO-220-7 (Formed Leads) |
库存5,120 |
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Infineon Technologies |
IC SMART BALLAST CONTROL DSO-16
- Type: Fluorescent Lamp Controller
- Frequency: 20kHz ~ 100kHz
- Voltage - Supply: 10.6 V ~ 17.5 V
- Current - Supply: 4.2mA
- Current - Output Source/Sink: -
- Dimming: No
- Operating Temperature: -25°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-16
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存4,176 |
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Infineon Technologies |
IC DVR LOW SIDE/DUAL HI 14-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 500mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 30ns, 20ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
|
封装: 14-SOIC (0.154", 3.90mm Width) |
库存50,544 |
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Infineon Technologies |
IC IGBT DVR 1200V DSO36
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 13 V ~ 18 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 30ns, 60ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 36-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-36
|
封装: 36-BSSOP (0.295", 7.50mm Width) |
库存2,768 |
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Infineon Technologies |
IC MOSFET/IGBT DVR HV HS 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 150ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存67,860 |
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Infineon Technologies |
IC MCU 32BIT 64KB FLASH 64LQFP
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 12x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存4,784 |
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Infineon Technologies |
IC AMP MMIC LNA LP TSLP7-1
- Frequency: 1.9GHz, 2.1GHz
- P1dB: -8dBm (0.2mW)
- Gain: 17dB
- Noise Figure: 1.1dB
- RF Type: UMTS
- Voltage - Supply: 2.6 V ~ 3 V
- Current - Supply: 3.6mA
- Test Frequency: 2.1GHz
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: TSLP-7-1
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封装: 6-XFDFN Exposed Pad |
库存7,794 |
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