|
|
Infineon Technologies |
IGBT 600V TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 160A
- Current - Collector Pulsed (Icm): 480A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
- Power - Max: 833W
- Switching Energy: 4.1mJ (on), 2.8mJ (off)
- Input Type: Standard
- Gate Charge: 772nC
- Td (on/off) @ 25°C: 33ns/310ns
- Test Condition: 400V, 120A, 3 Ohm, 15V
- Reverse Recovery Time (trr): 280ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-46
|
封装: TO-247-3 |
库存6,912 |
|
|
|
Infineon Technologies |
IGBT 650V 30A TRENCHSTOP TO247-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 85A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
- Power - Max: 227W
- Switching Energy: 470µJ (on), 1.35mJ (off)
- Input Type: Standard
- Gate Charge: 168nC
- Td (on/off) @ 25°C: 33ns/308ns
- Test Condition: 400V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
|
封装: TO-247-3 |
库存6,880 |
|
|
|
Infineon Technologies |
MOD IGBT 600V 50A POWIR 34
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Power - Max: 260W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 2.6nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR? 34 Module
- Supplier Device Package: POWIR? 34
|
封装: POWIR? 34 Module |
库存7,024 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 87A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,312 |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 90A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
|
封装: TO-251-3 Stub Leads, IPak |
库存2,736 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 67A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存5,312 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 20.2A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 290µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
封装: TO-247-3 |
库存3,632 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 45A 8-PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 10890pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
- Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-PowerVDFN
|
封装: 8-PowerVDFN |
库存3,296 |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 31A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存19,884 |
|
|
|
Infineon Technologies |
TRANS NPN 45V 0.8A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 500mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存274,314 |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 10V 3A SOD323-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 370mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.6mA @ 8V
- Capacitance @ Vr, F: 35pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
- Operating Temperature - Junction: 150°C (Max)
|
封装: SC-76, SOD-323 |
库存142,470 |
|
|
|
Infineon Technologies |
IC REG LINEAR 5V/15V SOT223-4
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 2
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 5V, 15V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.5V @ 25mA, 1.5V @ 30mA
- Current - Output: 25mA, 30mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 550µA ~ 1mA
- PSRR: 50dB (20Hz ~ 20kHz), 50dB (20Hz ~ 20kHz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
|
封装: TO-261-4, TO-261AA |
库存281,616 |
|
|
|
Infineon Technologies |
IC REG LINEAR 5V 400MA TO263-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 220µA ~ 25mA
- PSRR: 54dB (100Hz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
- Supplier Device Package: PG-TO263-5
|
封装: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
库存19,416 |
|
|
|
Infineon Technologies |
IC HISIDE PWR SWITCH 2CH PDSO-20
- Switch Type: General Purpose
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.75 V ~ 41 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3.6A
- Rds On (Typ): 50 mOhm
- Input Type: Non-Inverting
- Features: Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: P-DSO-20
|
封装: 20-SOIC (0.295", 7.50mm Width) |
库存19,632 |
|
|
|
Infineon Technologies |
IC SWITCH SMART HISIDE TO220-7
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5.5 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 33A
- Rds On (Typ): -
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-220-7 (Formed Leads)
- Supplier Device Package: PG-TO220-7-232
|
封装: TO-220-7 (Formed Leads) |
库存2,192 |
|
|
|
Infineon Technologies |
IC DRIVER HALF-BRIDGE 14-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
|
封装: 14-SOIC (0.154", 3.90mm Width) |
库存41,580 |
|
|
|
Infineon Technologies |
MAGNETIC SWITCH UNIPOLAR SC59
- Function: Unipolar Switch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 19.2mT Trip, -19.2mT Release
- Test Condition: -40°C ~ 125°C
- Voltage - Supply: 2.7 V ~ 18 V
- Current - Supply (Max): 6mA
- Current - Output (Max): 20mA
- Output Type: Open Drain
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存5,310 |
|
|
|
Infineon Technologies |
IGBT TRENCH FS 1200V 150A TO247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Power - Max: 880 W
- Switching Energy: 2.2mJ (on), 2.95mJ (off)
- Input Type: Standard
- Gate Charge: 530 nC
- Td (on/off) @ 25°C: 32ns/300ns
- Test Condition: 600V, 75A, 4Ohm, 15V
- Reverse Recovery Time (trr): 205 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-2
|
封装: - |
库存774 |
|
|
|
Infineon Technologies |
DIODE
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1.6 kV
- Current - On State (It (AV)) (Max): 162 A
- Current - On State (It (RMS)) (Max): 260 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 6A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
|
封装: - |
库存240 |
|
|
|
Infineon Technologies |
IC MCU 32BIT 128KB FLASH 40QFN
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
- Number of I/O: 34
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 20x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4870A D12035K-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 4870A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 mA @ 4200 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: BG-D12035K-1
- Operating Temperature - Junction: -40°C ~ 160°C
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
- Number of I/O: 46
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 24x12b SAR; D/A 4x7/8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 56-VFQFN Exposed Pad
- Supplier Device Package: 56-QFN-EP (8x8)
|
封装: - |
库存7,800 |
|
|
|
Infineon Technologies |
IC BATT BALANCER TQFP-48-11
- Function: Battery Balancer
- Battery Chemistry: -
- Number of Cells: -
- Fault Protection: -
- Interface: UART
- Operating Temperature: -
- Package / Case: 48-TQFP Exposed Pad
- Supplier Device Package: PG-TQFP-48-11
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IGBT MODULE 1400W MED PWR 62MM-2
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: 1400 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
TRENCH >=100V PG-TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8 FL
- Package / Case: 8-PowerTDFN
|
封装: - |
库存14,370 |
|
|
|
Infineon Technologies |
SICFET N-CH 1.2KV 56A TO263
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5.7V @ 11.5mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V
- Vgs (Max): +18V, -15V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
|
封装: - |
库存2,892 |
|
|
|
Infineon Technologies |
DRIVER IC PG-DSO-16
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 20V
- Logic Voltage - VIL, VIH: -, 1.65V
- Current - Peak Output (Source, Sink): 1A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 6.5ns, 4.5ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-16-30
|
封装: - |
库存2,949 |
|