页 416 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IPP35CN10N G	Infineon Technologies	MOSFET N-CH 100V 27A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存12,252
IPB34CN10NGATMA1	Infineon Technologies	MOSFET N-CH 100V 27A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,976
BSS138NL6433HTMA1	Infineon Technologies	MOSFET N-CH 60V 230MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存4,432
IRF6609TR1PBF	Infineon Technologies	MOSFET N-CH 20V 31A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 31A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	封装: DirectFET? Isometric MT	库存25,560
IRLR7833PBF	Infineon Technologies	MOSFET N-CH 30V 140A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存641,676
IRF7822TRPBF	Infineon Technologies	MOSFET N-CH 30V 18A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存55,932
IRF6603	Infineon Technologies	MOSFET N-CH 30V 27A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V Vgs (Max): +20V, -12V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	封装: DirectFET? Isometric MT	库存150,372
IRFB3004PBF	Infineon Technologies	MOSFET N-CH 40V 195A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存17,664
MMBT2222ALT1HTSA1	Infineon Technologies	TRANS NPN 40V 0.6A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 330mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存260,352
BB804SF2E6327HTSA1	Infineon Technologies	DIODE VAR CAP 18V 50MA SOT-23 Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz Capacitance Ratio: 1.71 Capacitance Ratio Condition: C2/C8 Voltage - Peak Reverse (Max): 18V Diode Type: 1 Pair Common Cathode Q @ Vr, F: 200 @ 2V, 100 MHz Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存144,000
IRU1117-18CSTR	Infineon Technologies	IC REG LINEAR 1.8V 800MA 8SOIC Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 7V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 1.3V @ 1A Current - Output: 800mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,472
BSP452 E6327	Infineon Technologies	IC HIGH SIDE SWITCH SOT-223 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 5 V ~ 34 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 700mA Rds On (Typ): 160 mOhm Input Type: Non-Inverting Features: - Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	封装: TO-261-4, TO-261AA	库存6,588
IRMCK188TR	Infineon Technologies	IC MOTOR CONTROLLER Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,248
AN983BX-BG-R-V1	Infineon Technologies	IC CTRLR LAN PCI-ETHER 128QFP Protocol: Ethernet Function: Controller Interface: PCI Standards: IEEE 802.3, 10/100 Base-T/TX PHY Voltage - Supply: 3 V ~ 3.6 V Current - Supply: 150mA Operating Temperature: 0°C ~ 70°C Package / Case: 128-BFQFP Supplier Device Package: PG-PQFP-128	封装: 128-BFQFP	库存7,424
SAK-C161CS-LF CA	Infineon Technologies	IC MCU 16BIT ROMLESS 128TQFP Core Processor: C166 Core Size: 16-Bit Speed: 25MHz Connectivity: CAN, EBI/EMI, I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 93 Program Memory Size: - Program Memory Type: ROMless EEPROM Size: - RAM Size: 10K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 12x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (20x20)	封装: 128-LQFP	库存6,160
XC2388C200F100LABKXUMA1	Infineon Technologies	IC MCU 16BIT 1.5MB FLASH 144LQFP Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 100MHz Connectivity: CAN, EBI/EMI, FlexRay, I2C, LIN, SPI, UART/USART Peripherals: I2S, POR, PWM, WDT Number of I/O: 118 Program Memory Size: 1.56MB (1.56M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 138K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 24x10b Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 144-LQFP Exposed Pad Supplier Device Package: PG-LQFP-144	封装: 144-LQFP Exposed Pad	库存3,152
V23826-C18-C63	Infineon Technologies	TXRX SINGLE MODE 155MBD 1X9 Data Rate: 155Mbps Wavelength: 1300nm Applications: Ethernet Voltage - Supply: 4.75 V ~ 5.25 V Connector Type: SC Mounting Type: Through Hole	封装: -	库存4,212
ASP1251-I08T	Infineon Technologies	IC REGULATOR PG-VQFN-48-900 Applications: - Voltage - Input: - Number of Outputs: - Voltage - Output: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,336
BFP740E6327	Infineon Technologies	RF TRANSISTOR, X BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Gain: 27dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封装: -	Request a Quote
FP25R12KT4BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2B-411 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 25 A Power - Max: 160 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2B	封装: -	库存45
S70KL1282GABHI023	Infineon Technologies	IC PSRAM 128MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 128Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封装: -	Request a Quote
FZ3600R17KE3	Infineon Technologies	IGBT MODULE IGBT Type: - Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): - Power - Max: 350 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 3.6kA, 15V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-IHM190-2-1	封装: -	Request a Quote
CYPD4225-40LQXIT	Infineon Technologies	TYPE-C - OTHERS Applications: USB Type C Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH (128kB) Controller Series: - RAM Size: 8K x 8 Interface: I2C, SPI, UART/USART, USB Number of I/O: 25 Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 40-UFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	封装: -	Request a Quote
CG7600AA	Infineon Technologies	IC SRAM 18MBIT PARALLEL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封装: -	库存603
TD425N12KOFS01HPSA1	Infineon Technologies	MOODULE Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.2 kV Current - On State (It (AV)) (Max): 471 A Current - On State (It (RMS)) (Max): 800 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	封装: -	Request a Quote
BSC017N04NSGATMA1	Infineon Technologies	MOSFET N-CH 40V 30A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	封装: -	Request a Quote
BTS132E3129NKSA1	Infineon Technologies	BTS132 - N-CHANNEL TEMPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	Request a Quote
CYT4BB5CEBQ1AEEGST	Infineon Technologies	IC MCU 32BIT 4MB FLASH 100LQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Core Size: 32-Bit Tri-Core Speed: 100MHz, 250MHz Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 72 Program Memory Size: 4.0625MB (4.0625M x 8) Program Memory Type: FLASH EEPROM Size: 256K x 8 RAM Size: 768K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 37x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Supplier Device Package: 100-TEQFP (14x14)	封装: -	Request a Quote
FF600R12IP4B60BPSA1	Infineon Technologies	PP IHM I IGBT Type: Trench Field Stop Configuration: Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 600 A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote
CY8C6347BZI-BLD44	Infineon Technologies	IC MCU 32BIT 1MB FLASH 124VFBGA Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 150MHz Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Number of I/O: 84 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 288K x 8 Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 124-VFBGA Supplier Device Package: 124-VFBGA (9x9)	封装: -	Request a Quote

IPP35CN10N G

Infineon Technologies

MOSFET N-CH 100V 27A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 27A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存12,252

IPB34CN10NGATMA1

Infineon Technologies

MOSFET N-CH 100V 27A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 27A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,976

BSS138NL6433HTMA1

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存4,432

IRF6609TR1PBF

Infineon Technologies

MOSFET N-CH 20V 31A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 31A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MT
Package / Case: DirectFET? Isometric MT

封装: DirectFET? Isometric MT

库存25,560

IRLR7833PBF

Infineon Technologies

MOSFET N-CH 30V 140A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存641,676

IRF7822TRPBF

Infineon Technologies

MOSFET N-CH 30V 18A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 16V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存55,932

IRF6603

Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V
Vgs (Max): +20V, -12V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MT
Package / Case: DirectFET? Isometric MT

封装: DirectFET? Isometric MT

库存150,372

IRFB3004PBF

Infineon Technologies

MOSFET N-CH 40V 195A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存17,664

MMBT2222ALT1HTSA1

Infineon Technologies

TRANS NPN 40V 0.6A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 330mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存260,352

BB804SF2E6327HTSA1

Infineon Technologies

DIODE VAR CAP 18V 50MA SOT-23

Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Capacitance Ratio: 1.71
Capacitance Ratio Condition: C2/C8
Voltage - Peak Reverse (Max): 18V
Diode Type: 1 Pair Common Cathode
Q @ Vr, F: 200 @ 2V, 100 MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存144,000

IRU1117-18CSTR

Infineon Technologies

IC REG LINEAR 1.8V 800MA 8SOIC

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 7V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.3V @ 1A
Current - Output: 800mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,472

BSP452 E6327

Infineon Technologies

IC HIGH SIDE SWITCH SOT-223

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 5 V ~ 34 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Rds On (Typ): 160 mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

封装: TO-261-4, TO-261AA

库存6,588

IRMCK188TR

Infineon Technologies

IC MOTOR CONTROLLER

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,248

AN983BX-BG-R-V1

Infineon Technologies

IC CTRLR LAN PCI-ETHER 128QFP

Protocol: Ethernet
Function: Controller
Interface: PCI
Standards: IEEE 802.3, 10/100 Base-T/TX PHY
Voltage - Supply: 3 V ~ 3.6 V
Current - Supply: 150mA
Operating Temperature: 0°C ~ 70°C
Package / Case: 128-BFQFP
Supplier Device Package: PG-PQFP-128

封装: 128-BFQFP

库存7,424

SAK-C161CS-LF CA

Infineon Technologies

IC MCU 16BIT ROMLESS 128TQFP

Core Processor: C166
Core Size: 16-Bit
Speed: 25MHz
Connectivity: CAN, EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 93
Program Memory Size: -
Program Memory Type: ROMless
EEPROM Size: -
RAM Size: 10K x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 12x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (20x20)

封装: 128-LQFP

库存6,160

XC2388C200F100LABKXUMA1

Infineon Technologies

IC MCU 16BIT 1.5MB FLASH 144LQFP

Core Processor: C166SV2
Core Size: 16/32-Bit
Speed: 100MHz
Connectivity: CAN, EBI/EMI, FlexRay, I2C, LIN, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 118
Program Memory Size: 1.56MB (1.56M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 138K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 24x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 144-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-144

封装: 144-LQFP Exposed Pad

库存3,152

V23826-C18-C63

Infineon Technologies

TXRX SINGLE MODE 155MBD 1X9

Data Rate: 155Mbps
Wavelength: 1300nm
Applications: Ethernet
Voltage - Supply: 4.75 V ~ 5.25 V
Connector Type: SC
Mounting Type: Through Hole

封装: -

库存4,212

ASP1251-I08T

Infineon Technologies

IC REGULATOR PG-VQFN-48-900

Applications: -
Voltage - Input: -
Number of Outputs: -
Voltage - Output: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,336

BFP740E6327

Infineon Technologies

RF TRANSISTOR, X BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain: 27dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封装: -

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FP25R12KT4BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Power - Max: 160 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2B

封装: -

库存45

S70KL1282GABHI023

Infineon Technologies

IC PSRAM 128MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封装: -

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FZ3600R17KE3

Infineon Technologies

IGBT MODULE

IGBT Type: -
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): -
Power - Max: 350 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 3.6kA, 15V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-IHM190-2-1

封装: -

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CYPD4225-40LQXIT

Infineon Technologies

TYPE-C - OTHERS

Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (128kB)
Controller Series: -
RAM Size: 8K x 8
Interface: I2C, SPI, UART/USART, USB
Number of I/O: 25
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

封装: -

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CG7600AA

Infineon Technologies

IC SRAM 18MBIT PARALLEL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封装: -

库存603

TD425N12KOFS01HPSA1

Infineon Technologies

MOODULE

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1.2 kV
Current - On State (It (AV)) (Max): 471 A
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

封装: -

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BSC017N04NSGATMA1

Infineon Technologies

MOSFET N-CH 40V 30A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

封装: -

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BTS132E3129NKSA1

Infineon Technologies

BTS132 - N-CHANNEL TEMPFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

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CYT4BB5CEBQ1AEEGST

Infineon Technologies

IC MCU 32BIT 4MB FLASH 100LQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Tri-Core
Speed: 100MHz, 250MHz
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 72
Program Memory Size: 4.0625MB (4.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 256K x 8
RAM Size: 768K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 37x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: 100-TEQFP (14x14)

封装: -

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FF600R12IP4B60BPSA1

Infineon Technologies

PP IHM I

IGBT Type: Trench Field Stop
Configuration: Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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CY8C6347BZI-BLD44

Infineon Technologies

IC MCU 32BIT 1MB FLASH 124VFBGA

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 150MHz
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Number of I/O: 84
Program Memory Size: 1MB (1M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 288K x 8
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Supplier Device Package: 124-VFBGA (9x9)

封装: -

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