页 417 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IHW30N90R	Infineon Technologies	IGBT 900V 60A 454W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 454W Switching Energy: 1.46mJ Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: -/511ns Test Condition: 600V, 30A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封装: TO-247-3	库存390,012
IRG4PC30UPBF	Infineon Technologies	IGBT 600V 23A 100W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 17ns/78ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	封装: TO-247-3	库存3,488
IRFP4228PBF	Infineon Technologies	MOSFET N-CH 150V 78A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 33A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封装: TO-247-3	库存69,036
BTS244Z E3043	Infineon Technologies	MOSFET N-CH 55V 35A TO220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO220-5 Package / Case: TO-220-5	封装: TO-220-5	库存7,056
BTS110E3045ANTMA1	Infineon Technologies	MOSFET N-CH 100V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220AB Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,848
IPU07N03LA	Infineon Technologies	MOSFET N-CH 25V 30A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存2,480
IRF3709L	Infineon Technologies	MOSFET N-CH 30V 90A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存2,016
IRL3103D1	Infineon Technologies	MOSFET N-CH 30V 64A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存6,608
IRFB7734PBF	Infineon Technologies	MOSFET N-CH 75V 183A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 183A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存4,096
IPA50R380CEXKSA2	Infineon Technologies	MOSFET N-CH 500V 6.3A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29.2W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存7,472
IPP052N06L3GXKSA1	Infineon Technologies	MOSFET N-CH 60V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 58µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存12,378
PXFC211507SCV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	封装: -	库存2,368
IRF7343PBF	Infineon Technologies	MOSFET N/P-CH 55V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存9,528
BCR 196L3 E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW TSLP-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	封装: SC-101, SOT-883	库存5,584
BCR 135F E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW TSFP-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	封装: SOT-723	库存5,408
BBY5802WE6127XT	Infineon Technologies	DIODE TUNING 10V 20MA SCD-80 Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz Capacitance Ratio: 3.5 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	封装: SC-80	库存6,752
TLE92623QXXUMA2	Infineon Technologies	IC SBC 48VQFN Applications: Automotive Interface: SPI Voltage - Supply: - Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-31 Mounting Type: Surface Mount	封装: 48-VFQFN Exposed Pad	库存3,376
XMC1302T038X0032AAXUMA1	Infineon Technologies	IC MCU 32BIT 32KB FLASH 38TSSOP Core Processor: ARM? Cortex?-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: I2C, LIN, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Number of I/O: 26 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 16x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: 38-TFSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-38-9	封装: 38-TFSOP (0.173", 4.40mm Width)	库存7,584
XMC1201T028F0016ABXUMA1	Infineon Technologies	IC MCU 32BIT 16KB FLASH 28TSSOP Core Processor: ARM? Cortex?-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: I2C, LIN, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Number of I/O: 20 Program Memory Size: 16KB (16K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 14x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 38-TFSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-38-9	封装: 38-TFSOP (0.173", 4.40mm Width)	库存6,880
TLE4905GNTSA1	Infineon Technologies	MAGNETIC SWITCH UNIPOLAR SOT89-3 Function: Unipolar Switch Technology: Hall Effect Polarization: South Pole Sensing Range: 18mT Trip, 5mT Release Test Condition: 25°C Voltage - Supply: 4 V ~ 18 V Current - Supply (Max): 5mA Current - Output (Max): 100mA Output Type: Open Collector Features: Temperature Compensated Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: TO-243AA Supplier Device Package: SOT-89-3	封装: TO-243AA	库存4,590
TDA5103AHTMA1	Infineon Technologies	TRANSMITTER ASK/FSK P-TSSOP-10 Frequency: 345MHz Applications: Alarm Systems, Communication Systems Modulation or Protocol: ASK, FSK Data Rate (Max): 20 kbps Power - Output: 5dBm Current - Transmitting: 7mA Data Interface: PCB, Surface Mount Antenna Connector: PCB, Surface Mount Memory Size: - Features: - Voltage - Supply: 2.1 V ~ 4 V Operating Temperature: -25°C ~ 85°C Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	封装: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	库存8,028
BTS72002EPCXUMA1	Infineon Technologies	PROFET Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Rds On (Typ): 66.5mOhm Input Type: Non-Inverting Features: - Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-TSDSO-14-22	封装: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad	库存22,986
IMBG65R009M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote
CG8838AM	Infineon Technologies	IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
S99FL064LABMFV013	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
BSZ039N06NSATMA1	Infineon Technologies	MOSFET N-CH 60V 18A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	封装: -	库存8,988
FZ900R12KE4HOSA1	Infineon Technologies	IGBT MOD 1200V 900A 4300W IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 900 A Power - Max: 4300 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 56 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存21
AUXDKG4PC40S-E	Infineon Technologies	IC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote
FS100R07N2E4BOSA1	Infineon Technologies	IGBT MOD 650V 100A 335W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Power - Max: 335 W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote
FS75R12W2T4BOMA1	Infineon Technologies	IGBT MOD 1200V 107A 375W IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 107 A Power - Max: 375 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存33

IHW30N90R

Infineon Technologies

IGBT 900V 60A 454W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 454W
Switching Energy: 1.46mJ
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: -/511ns
Test Condition: 600V, 30A, 15 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封装: TO-247-3

库存390,012

IRG4PC30UPBF

Infineon Technologies

IGBT 600V 23A 100W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Power - Max: 100W
Switching Energy: 160µJ (on), 200µJ (off)
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 17ns/78ns
Test Condition: 480V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

封装: TO-247-3

库存3,488

IRFP4228PBF

Infineon Technologies

MOSFET N-CH 150V 78A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 33A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封装: TO-247-3

库存69,036

BTS244Z E3043

Infineon Technologies

MOSFET N-CH 55V 35A TO220-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
Vgs (Max): ±20V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: P-TO220-5
Package / Case: TO-220-5

封装: TO-220-5

库存7,056

BTS110E3045ANTMA1

Infineon Technologies

MOSFET N-CH 100V 10A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-220AB
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,848

IPU07N03LA

Infineon Technologies

MOSFET N-CH 25V 30A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: P-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存2,480

IRF3709L

Infineon Technologies

MOSFET N-CH 30V 90A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存2,016

IRL3103D1

Infineon Technologies

MOSFET N-CH 30V 64A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存6,608

IRFB7734PBF

Infineon Technologies

MOSFET N-CH 75V 183A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存4,096

IPA50R380CEXKSA2

Infineon Technologies

MOSFET N-CH 500V 6.3A TO-220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 29.2W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存7,472

IPP052N06L3GXKSA1

Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存12,378

PXFC211507SCV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

Transistor Type: -
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: -
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,368

IRF7343PBF

Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存9,528

BCR 196L3 E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

封装: SC-101, SOT-883

库存5,584

BCR 135F E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

封装: SOT-723

库存5,408

BBY5802WE6127XT

Infineon Technologies

DIODE TUNING 10V 20MA SCD-80

Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio: 3.5
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

封装: SC-80

库存6,752

TLE92623QXXUMA2

Infineon Technologies

IC SBC 48VQFN

Applications: Automotive
Interface: SPI
Voltage - Supply: -
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-31
Mounting Type: Surface Mount

封装: 48-VFQFN Exposed Pad

库存3,376

XMC1302T038X0032AAXUMA1

Infineon Technologies

IC MCU 32BIT 32KB FLASH 38TSSOP

Core Processor: ARM? Cortex?-M0
Core Size: 32-Bit
Speed: 32MHz
Connectivity: I2C, LIN, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Number of I/O: 26
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 16x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Supplier Device Package: PG-TSSOP-38-9

封装: 38-TFSOP (0.173", 4.40mm Width)

库存7,584

XMC1201T028F0016ABXUMA1

Infineon Technologies

IC MCU 32BIT 16KB FLASH 28TSSOP

Core Processor: ARM? Cortex?-M0
Core Size: 32-Bit
Speed: 32MHz
Connectivity: I2C, LIN, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Number of I/O: 20
Program Memory Size: 16KB (16K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 14x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Supplier Device Package: PG-TSSOP-38-9

封装: 38-TFSOP (0.173", 4.40mm Width)

库存6,880

TLE4905GNTSA1

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SOT89-3

Function: Unipolar Switch
Technology: Hall Effect
Polarization: South Pole
Sensing Range: 18mT Trip, 5mT Release
Test Condition: 25°C
Voltage - Supply: 4 V ~ 18 V
Current - Supply (Max): 5mA
Current - Output (Max): 100mA
Output Type: Open Collector
Features: Temperature Compensated
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

封装: TO-243AA

库存4,590

TDA5103AHTMA1

Infineon Technologies

TRANSMITTER ASK/FSK P-TSSOP-10

Frequency: 345MHz
Applications: Alarm Systems, Communication Systems
Modulation or Protocol: ASK, FSK
Data Rate (Max): 20 kbps
Power - Output: 5dBm
Current - Transmitting: 7mA
Data Interface: PCB, Surface Mount
Antenna Connector: PCB, Surface Mount
Memory Size: -
Features: -
Voltage - Supply: 2.1 V ~ 4 V
Operating Temperature: -25°C ~ 85°C
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

封装: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

库存8,028

BTS72002EPCXUMA1

Infineon Technologies

PROFET

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 66.5mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-TSDSO-14-22

封装: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad

库存22,986

IMBG65R009M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

CG8838AM

Infineon Technologies

IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

S99FL064LABMFV013

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

BSZ039N06NSATMA1

Infineon Technologies

MOSFET N-CH 60V 18A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

封装: -

库存8,988

FZ900R12KE4HOSA1

Infineon Technologies

IGBT MOD 1200V 900A 4300W

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Power - Max: 4300 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存21

AUXDKG4PC40S-E

Infineon Technologies

IC DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

FS100R07N2E4BOSA1

Infineon Technologies

IGBT MOD 650V 100A 335W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 335 W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

Request a Quote

FS75R12W2T4BOMA1

Infineon Technologies

IGBT MOD 1200V 107A 375W

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 107 A
Power - Max: 375 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存33