Infineon Technologies 产品

BUZ31L

Infineon Technologies

MOSFET N-CH 200V 13.5A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 95W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 7A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

IPC300N15N3RX1SA2

Infineon Technologies

MOSFET N-CH 150V BARE DIE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Sawn on foil
• Package / Case: Die

封装: Die

BSL802SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 20V 7.5A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
• Vgs(th) (Max) @ Id: 0.75V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 2.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1347pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSOP6-6
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

BSL806NL6327HTSA1

Infineon Technologies

MOSFET 2N-CH 20V 2.3A 6TSOP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.3A
• Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V
• Vgs(th) (Max) @ Id: 750mV @ 11µA
• Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V
• Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V
• Power - Max: 500mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: PG-TSOP6-6

封装: SOT-23-6 Thin, TSOT-23-6

IRF7324TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 9A 8-SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 9A
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

BCX5616H6433XTMA1

Infineon Technologies

TRANSISTOR AF SOT89-4

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

封装: TO-243AA

BCR 158T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

封装: SC-75, SOT-416

IDH05S120AKSA1

Infineon Technologies

DIODE SCHOTTKY 1200V 5A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 120µA @ 1200V
• Capacitance @ Vr, F: 250pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2
• Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

IRU1176CMTR

Infineon Technologies

IC REG LIN POS ADJ 7.5A D2PAK

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 5.5V
• Voltage Dropout (Max): 1.15V @ 7.5A (Typ)
• Current - Output: 7.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: D2PAK (7-Lead)

封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

AUIPS7091S

Infineon Technologies

IC HIGH SIDE SWITCH IPS D2-PAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 35 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C
• Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: D2PAK-5

封装: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

BTT60502EKAXUMA1

Infineon Technologies

IC PWR SW HI-SIDE 2CH DSO14-40

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 36 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 50 mOhm
• Input Type: -
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-14-40-EP

封装: 14-SOIC (0.154", 3.90mm Width) Exposed Pad

PSF 6973 EL V1.3-G

Infineon Technologies

IC SW CTRLR TANTOS-3G LFBGA-225

• Function: Ethernet Switch Controller
• Interface: TX / FX
• Number of Circuits: 1
• Voltage - Supply: 3.3V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 225-LFBGA
• Supplier Device Package: PG-LFBGA-225

封装: 225-LFBGA

V23826-H18-C63

Infineon Technologies

TXRX SINGLE MODE 622MBD 1X9

• Data Rate: 622Mbps
• Wavelength: 1300nm
• Applications: Ethernet
• Voltage - Supply: 4.75 V ~ 5.25 V
• Connector Type: SC
• Mounting Type: Through Hole

封装: -

TLE4998P8XUMA1

Infineon Technologies

IC HALL SENSOR LINEAR TDSO-8

• Type: -
• Technology: -
• Axis: -
• Output Type: -
• Sensing Range: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Resolution: -
• Bandwidth: -
• Operating Temperature: -
• Features: -
• Package / Case: -
• Supplier Device Package: -

封装: -

PVAZ172NS

Infineon Technologies

IC RELAY PHOTOVO 60V 1.0A 8-SMD

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 500 mOhm
• Load Current: 1A
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SMD (0.300", 7.62mm) 4 Leads
• Supplier Device Package: 8-SMT Modified
• Relay Type: Relay

封装: 8-SMD (0.300", 7.62mm) 4 Leads

IR3541MSM03TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-902

• Applications: Controller, DDR, Intel VR12, AMD SVI
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封装: 40-VFQFN Exposed Pad

IAUC120N04S6N008ATMA1

Infineon Technologies

MOSFET_(20V 40V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-43
• Package / Case: 8-PowerTDFN

封装: -

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CY15V102QSN-108SXIT

Infineon Technologies

IC FRAM 2MBIT SPI/QUAD 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 2Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

封装: -

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TD60N16SOFHPSA1

Infineon Technologies

SCR MODULE 1600V 90A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 55 A
• Current - On State (It (RMS)) (Max): 90 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A @ 50Hz
• Current - Hold (Ih) (Max): 250 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

D6001N50TXPSA1

Infineon Technologies

DIODE GEN PURP 5KV 8010A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 5000 V
• Current - Average Rectified (Io): 8010A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400 mA @ 5000 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 160°C

封装: -

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CY9AF009ABGL-GK9E1

Infineon Technologies

MM MCU

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

FS800R07A2E3IBPSA1

Infineon Technologies

MOD IGBT MED PWR ECOHY2-1

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IRFC5210B

Infineon Technologies

MOSFET 100V 40A DIE

• FET Type: -
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 40A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

封装: -

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CY8C6244AZI-S4D83

Infineon Technologies

IC MCU 32BIT 256KB FLASH 80TQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: FIFO, I2C, LINbus, QSPI, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 62
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-TQFP (12x12)

封装: -

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FF600R17KE3B2S1NOSA1

Infineon Technologies

FF600R17 - INSULATED GATE BIPOLA

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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PBM99013-1EGBR1B

Infineon Technologies

INFINEON PBM9901/31EGB - HBGA-50

• Type: -
• Applications: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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FS150R17KE3GBOSA1

Infineon Technologies

IGBT MOD 1700V 240A 1050W

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 240 A
• Power - Max: 1050 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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CY8C4148AZAS555XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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