Infineon Technologies 产品

AUIRLS3034-7P

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

IPB45N04S4L08ATMA1

Infineon Technologies

MOSFET N-CH 40V 45A TO263-3-2

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 17µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPP24N60CFDHKSA1

Infineon Technologies

MOSFET N-CH 650V 21.7A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 240W (Tc)
• Rds On (Max) @ Id, Vgs: 185 mOhm @ 15.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封装: TO-220-3

IPD050N03LGBTMA1

Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IPC60R2K0C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

BSD316SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 30V 1.4A SOT363

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 3.7µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT363-6
• Package / Case: 6-VSSOP, SC-88, SOT-363

封装: 6-VSSOP, SC-88, SOT-363

IPD60R450E6

Infineon Technologies

MOSFET N-CH 600V 9.2A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 280µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 74W (Tc)
• Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3910TRLPBF

Infineon Technologies

MOSFET N-CH 100V 16A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF5210PBF

Infineon Technologies

MOSFET P-CH 100V 40A TO-220AB

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

BTS7904SAKSA1

Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO220

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 55V, 30V
• Current - Continuous Drain (Id) @ 25°C: 40A
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
• Power - Max: 69W, 96W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-220-5
• Supplier Device Package: PG-TO220-5-13

封装: TO-220-5

BTS410E2 E3062A

Infineon Technologies

IC HIGH SIDE PWR SWITCH TO220-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.7 V ~ 42 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.6A
• Rds On (Typ): 190 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
• Supplier Device Package: PG-TO263-5-2

封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

ICE3AR1080VJZXKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS CM 7DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 800V
• Topology: Flyback
• Voltage - Start Up: 17V
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
• Duty Cycle: 75%
• Frequency - Switching: 100kHz
• Power (Watts): 71W
• Fault Protection: Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7
• Mounting Type: Through Hole

封装: 8-DIP (0.300", 7.62mm), 7 Leads

TLE4945-2L

Infineon Technologies

MAGNETIC SWITCH BIPOLAR PSSO-3-2

• Function: Bipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 6mT Trip, -6mT Release
• Test Condition: 25°C
• Voltage - Supply: 3.8 V ~ 24 V
• Current - Supply (Max): 8mA
• Current - Output (Max): 100mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 3-SIP, SSO-3-02
• Supplier Device Package: P-SSO-3-2

封装: 3-SIP, SSO-3-02

TLE4966LHALA1

Infineon Technologies

MAGNETIC SWITCH BIPOLAR PSSO-4-1

• Function: Bipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 10mT Trip, -10mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.7 V ~ 18 V
• Current - Supply (Max): 7mA
• Current - Output (Max): 10mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 4-SIP, SSO-4-01
• Supplier Device Package: P-SSO-4-1

封装: 4-SIP, SSO-4-01

PVU414S-TPBF

Infineon Technologies

IC RELAY PHOTOVO 400V 140MA 6SMD

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 27 Ohm
• Load Current: 140mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SMD (0.300", 7.62mm)
• Supplier Device Package: 6-SMT
• Relay Type: Relay

封装: 6-SMD (0.300", 7.62mm)

S26HS02GTFPBHM040

Infineon Technologies

IC FLASH 2GBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 2Gbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

封装: -

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S6J336CHEBSE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 132MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 94
• Program Memory Size: 112KB (112K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 40x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 144-TEQFP (20x20)

封装: -

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S99GL512S11TFI020

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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D291S45TXPSA1

Infineon Technologies

DIODE GEN PURP 4.5KV 445A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500 V
• Current - Average Rectified (Io): 445A
• Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 125°C

封装: -

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MA2306DNSXUMA1

Infineon Technologies

AUDIO IC

• Type: -
• Output Type: -
• Max Output Power x Channels @ Load: -
• Voltage - Supply: -
• Features: -
• Mounting Type: -
• Operating Temperature: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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IDT02S60C

Infineon Technologies

DIODE SIL CARB 600V 3A TO220-2

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 15 µA @ 600 V
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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FF400R12KT4PBOSA1

Infineon Technologies

FF400R12KT4P - 1200 V, 400 A DUA

• IGBT Type: Trench Field Stop
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 400 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 28000 pF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MMHB

封装: -

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CY8C4147AZS-S245T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16, 20x10/12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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FF23MR12W1M1PB11BPSA1

Infineon Technologies

MOSFET 2 IND 1200V 50A EASY1BM

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 50A
• Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
• Vgs(th) (Max) @ Id: 5.5V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1BM-2

封装: -

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111-4143BPBF

Infineon Technologies

IC REGULATOR CTLR SMD

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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DZ950N44KHPSA1

Infineon Technologies

DIODE GEN PURP 4.4KV 950A MODULE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4400 V
• Current - Average Rectified (Io): 950A
• Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module
• Operating Temperature - Junction: -40°C ~ 150°C

封装: -

ISC058N04NM5ATMA1

Infineon Technologies

40V 5.8M OPTIMOS MOSFET SUPERSO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 13µA
• Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8 FL
• Package / Case: 8-PowerTDFN

封装: -

T2480N28TOFVTXPSA1

Infineon Technologies

SCR MODULE 2800V 5100A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.8 kV
• Current - On State (It (AV)) (Max): 2490 A
• Current - On State (It (RMS)) (Max): 5100 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 47500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE

封装: -

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