Infineon Technologies 产品

IRGB30B60K

Infineon Technologies

IGBT 600V 78A 370W TO220AB

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 78A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
• Power - Max: 370W
• Switching Energy: 350µJ (on), 825µJ (off)
• Input Type: Standard
• Gate Charge: 102nC
• Td (on/off) @ 25°C: 46ns/185ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

FA300R12ME4BOSA1

Infineon Technologies

MODULE IGBT ECONO DUAL 3

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BTS244ZE3043AKSA2

Infineon Technologies

MOSFET N-CH 55V 35A TO220-5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Temperature Sensing Diode
• Power Dissipation (Max): 170W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO220-5
• Package / Case: TO-220-5

封装: TO-220-5

IPD80R1K0CEATMA1

Infineon Technologies

MOSFET N-CH 800V 5.7A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRLL3303TRPBF

Infineon Technologies

MOSFET N-CH 30V 4.6A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

IDP30E65D1XKSA1

Infineon Technologies

DIODE GEN PURP 650V 60A TO220-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 60A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 64ns
• Current - Reverse Leakage @ Vr: 40µA @ 650V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2-1
• Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-220-2

IR3566BMTR1PBF

Infineon Technologies

IC REG CTRLR DL BUCK PWM 48QFN

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (6x6)

封装: 48-VFQFN Exposed Pad

IRU1117-33CDTR

Infineon Technologies

IC REG LINEAR 3.3V 800MA DPAK

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 800mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BTS7700GNUMA1

Infineon Technologies

IC SW TRILITHIC 200MOHM PDSO28

• Output Configuration: Half Bridge (2)
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: DMOS
• Rds On (Typ): 80 mOhm LS, 110 mOhm HS
• Current - Output / Channel: -
• Current - Peak Output: 9A
• Voltage - Supply: 1.8 V ~ 42 V
• Voltage - Load: 1.8 V ~ 42 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Slew Rate Controlled, Status Flag
• Fault Protection: ESD, Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-28

封装: 28-SOIC (0.295", 7.50mm Width)

TC1724N192F133HRACKXUMA1

Infineon Technologies

IC MCU 32BIT FLASH 144LQFP

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 133MHz
• Connectivity: ASC, CAN, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number of I/O: 95
• Program Memory Size: 1.5MB (1.5M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 64K x 8
• RAM Size: 152K x 8
• Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V
• Data Converters: A/D 4x10b, 24x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

PVI5050NS

Infineon Technologies

OPTOISO 4KV PHOTOVOLTAIC 8-SMT

• Number of Channels: 1
• Voltage - Isolation: 4000Vrms
• Current Transfer Ratio (Min): -
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Photovoltaic
• Voltage - Output (Max): 5V
• Current - Output / Channel: 5µA
• Voltage - Forward (Vf) (Typ): -
• Current - DC Forward (If) (Max): -
• Vce Saturation (Max): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SMD (4 Leads), Gull Wing
• Supplier Device Package: 8-SMD

封装: 8-SMD (4 Leads), Gull Wing

TLE9250LEXUMA1

Infineon Technologies

TRANSCEIVER

• Type: Transceiver
• Protocol: CANbus
• Number of Drivers/Receivers: 1/1
• Duplex: -
• Receiver Hysteresis: 100mV
• Data Rate: 5Mbps
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

封装: -

TLE4295GV50NTSA1

Infineon Technologies

IC REG LINEAR 5V 30MA SCT595-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 20mA
• Current - Output: 30mA
• Current - Quiescent (Iq): 200µA
• Current - Supply (Max): 4mA
• PSRR: 60dB (100Hz)
• Control Features: Power Fail
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT595-5

封装: 6-SMD (5 Leads), Gull Wing

XMC1302T028X0064ABXUMA1

Infineon Technologies

XMC1000

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I²C, IrDA, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
• Number of I/O: 26
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 14x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-28-16

封装: 28-TSSOP (0.173", 4.40mm Width)

BTS72002EPAXUMA1

Infineon Technologies

PROFET

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6V ~ 18V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.2A
• Rds On (Typ): 66.5mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-14-22

封装: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad

40060575

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IPB039N10N3GATMA1

Infineon Technologies

MOSFET N-CH 100V 160A TO263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 160µA
• Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 214W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7
• Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

封装: -

CG8836AM

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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TC337LP32F300SAAKXUMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 292LFBGA

• Core Processor: TriCore™
• Core Size: 32-Bit Single-Core
• Speed: 300MHz
• Connectivity: DMA, I2S, PWM, WDT
• Peripherals: DMA, I2S, PWM, WDT
• Number of I/O: -
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 248K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 292-LFBGA
• Supplier Device Package: PG-LFBGA-292-11

封装: -

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SPD50N03S2L

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 85µA
• Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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2EDN8534RXTMA1

Infineon Technologies

DRIVER IC PG-TSSOP-8

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5V ~ 20V
• Logic Voltage - VIL, VIH: 1.4V, 1.9V
• Current - Peak Output (Source, Sink): 5A, 5A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 8.6ns, 6ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: PG-TSSOP-8

封装: -

CY7C65217A-24LTXI

Infineon Technologies

USB FULL-SPEED PERIPHERALS

• Protocol: USB
• Function: Controller
• Interface: GPIO, I2C, Serial, UART
• Standards: USB 2.0
• Voltage - Supply: 1.71V, 3.15V, 4.35V ~ 1.89V, 3.45V, 3.63V
• Current - Supply: 20mA
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

封装: -

FF900R12ME7B11NPSA1

Infineon Technologies

MEDIUM POWER ECONO

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 900 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
• Current - Collector Cutoff (Max): 100 µA
• Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONOD-3

封装: -

CP7407ATT

Infineon Technologies

SEMICONDUCTOR OTHER

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CY8C4147AZE-S245

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64TQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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CY15B108QI-20BFXA

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 8Mbit
• Memory Interface: SPI
• Clock Frequency: 20 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20 ns
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFLGA
• Supplier Device Package: 8-UFLGA (3.28x3.23)

封装: -

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CY8C4124LQA-S413

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封装: -

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CY8C4149AZQ-S545

Infineon Technologies

IC MCU 32BIT 384KB FLSH 100LQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 54
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: -

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