Infineon Technologies 产品

IRG7PH46UPBF

Infineon Technologies

IGBT 1200V 130A 469W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 130A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 469W
• Switching Energy: 2.56mJ (on), 1.78mJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 45ns/410ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

IRF8304MTR1PBF

Infineon Technologies

MOSFET N-CH 30V 28A MX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

封装: DirectFET? Isometric MX

IRF7494TRPBF

Infineon Technologies

MOSFET N-CH 150V 5.1A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1783pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

SPW11N60S5FKSA1

Infineon Technologies

MOSFET N-CH 600V 11A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

封装: TO-247-3

IRF7466TR

Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

BSP135H6906XTSA1

Infineon Technologies

MOSFET N-CH 600V 120MA SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1V @ 94µA
• Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

IRF2805PBF

Infineon Technologies

MOSFET N-CH 55V 75A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

IDV20E65D1XKSA1

Infineon Technologies

DIODE GEN PURP 650V 28A TO220-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 28A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 42ns
• Current - Reverse Leakage @ Vr: 40µA @ 650V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: PG-TO220-2 Full Pack
• Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-220-2 Full Pack

TLF2931GV33XUMA1

Infineon Technologies

IC REG LINEAR 3.3V 100MA 8DSO

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 26V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.1V @ 100mA
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1mA ~ 15mA
• PSRR: 80dB (120Hz)
• Control Features: -
• Protection Features: Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

BTS54040LBBAUMA1

Infineon Technologies

IC PWR SWITCH HISIDE PG-TSON-24

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 5.5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): 3.8 V ~ 5.5 V
• Current - Output (Max): 2A
• Rds On (Typ): 39 mOhm
• Input Type: -
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-PowerVDFN
• Supplier Device Package: TSON-24-3

封装: 24-PowerVDFN

AUIPS1051L

Infineon Technologies

IC SW IPS 1CH LOW SIDE SOT223

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.3A
• Rds On (Typ): 160 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

BTS50301EJAXUMA1

Infineon Technologies

IC PWR SW HI-SIDE 1CH 8DSO

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 8 V ~ 18 V
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): 5A
• Rds On (Typ): 30 mOhm
• Input Type: -
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-8-43-EP

封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

IR4428S

Infineon Technologies

IC DRIVER DUAL LOW SIDE 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 6 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.7V
• Current - Peak Output (Source, Sink): 2.3A, 3.3A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 15ns, 10ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

XC2336B40F20LAAKXUMA1

Infineon Technologies

IC MCU 16BIT 320KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 320KB (320K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-6

封装: 64-LQFP Exposed Pad

IRS20124CD

Infineon Technologies

IC AUDIO DVR DGTL HI/LO DIE

• Function: -
• Applications: -
• Number of Channels: -
• Interface: -
• Voltage - Supply: -
• Operating Temperature: -
• Specifications: -
• Package / Case: -
• Supplier Device Package: -

封装: -

SAE800GGEGXUMA1

Infineon Technologies

AUDIO AMPLIFIERS INDUSTRIAL IC

• Function: -
• Applications: -
• Number of Channels: -
• Interface: -
• Voltage - Supply: -
• Operating Temperature: -
• Specifications: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BTS6133DNT

Infineon Technologies

IC HIGH SIDE PWR SWITCH DPAK-5

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

C505CA4RMCAKXUMA2

Infineon Technologies

IC MCU 32BIT 44MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IS26KS512S-DPBLI00

Infineon Technologies

INFINEON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: HyperFlash
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 96 ns
• Voltage - Supply: 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

封装: -

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SAF-C505-LM

Infineon Technologies

LEGACY 8-BIT MCU

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: Mask ROM
• EEPROM Size: -
• RAM Size: 256 x 8
• Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
• Data Converters: A/D 8x8b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-QFP
• Supplier Device Package: P-MQFP-44-1

封装: -

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DD750S65K3NOSA1

Infineon Technologies

DIODE MOD GP 6500V AIHV130-6

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 6500 V
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 750 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -50°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: A-IHV130-6

封装: -

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46DN06B02ELEMXPSA1

Infineon Technologies

DIODE GP 600V 10450A D-ELEM-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 10450A
• Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: BG-D-ELEM-1
• Operating Temperature - Junction: 180°C (Max)

封装: -

S25FS064SDSBHM023

Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 24BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 80 MHz
• Write Cycle Time - Word, Page: 2ms
• Access Time: 6 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

封装: -

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IPS60R210PFD7SAKMA1

Infineon Technologies

MOSFET N-CH 650V 16A TO251-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 64W (Tc)
• Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: -

BSO613SPVGXUMA1

Infineon Technologies

MOSFET P-CH 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8-6
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

CY8C4148LDAS573XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

封装: -

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BTS131E3045ANTMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 75W
• Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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FF300R17KE3HOSA1

Infineon Technologies

IGBT MODULE 1700V 1450W

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): -
• Power - Max: 1450 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -