Infineon Technologies 产品

IKA15N65H5XKSA1

Infineon Technologies

IGBT 650V 14A 33.3W PG-TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 33.3W
• Switching Energy: 120µJ (on), 50µJ (off)
• Input Type: Standard
• Gate Charge: 38nC
• Td (on/off) @ 25°C: 17ns/160ns
• Test Condition: 400V, 7.5A, 39 Ohm, 15V
• Reverse Recovery Time (trr): 48ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

封装: TO-220-3

IKW50N60TA

Infineon Technologies

IGBT 600V 80A 333W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 333W
• Switching Energy: 2.6mJ
• Input Type: Standard
• Gate Charge: 310nC
• Td (on/off) @ 25°C: 26ns/299ns
• Test Condition: 400V, 50A, 7 Ohm, 15V
• Reverse Recovery Time (trr): 143ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

IPB60R250CPATMA1

Infineon Technologies

MOSFET N-CH 650V 12A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPD30N06S2-15

Infineon Technologies

MOSFET N-CH 55V 30A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: P-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF6785MTRPBF

Infineon Technologies

MOSFET N-CH 200V 3.4A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 4.2A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MZ
• Package / Case: DirectFET? Isometric MZ

封装: DirectFET? Isometric MZ

IPZ40N04S53R1ATMA1

Infineon Technologies

MOSFET N-CH 8TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 71W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

IPA60R160C6

Infineon Technologies

MOSFET N-CH 600V 23.8A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 750µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

IPB180P04P4L02ATMA1

Infineon Technologies

MOSFET P-CH 40V 180A TO263-7

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 410µA
• Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 18700pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7-3
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

BFR 193W E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 16dB
• Power - Max: 580mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

TLE4305GNT

Infineon Technologies

IC SECONDARY SIDE CTRLR 8DSO

• Applications: Secondary-Side Controller
• Voltage - Input: -
• Voltage - Supply: 8 V ~ 42 V
• Current - Supply: 1.5mA
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

AUIPS7081RTRL

Infineon Technologies

IC SWITCH HI-SIDE 1CH D-PAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 35 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 55 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-6, DPak (5 Leads + Tab)
• Supplier Device Package: D-Pak 5-Lead

封装: TO-252-6, DPak (5 Leads + Tab)

PEB 4265 T V1.2

Infineon Technologies

IC SLIC VOICE ACCESS PDSO-20

• Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
• Interface: IOM-2, PCM
• Number of Circuits: 2
• Voltage - Supply: 5V
• Current - Supply: 105mA
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: P-DSO-20

封装: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

PBL38640/2SOT

Infineon Technologies

IC LINE INTERFACE SLIC PDSO-24

• Function: Subscriber Line Interface Concept (SLIC)
• Interface: -
• Number of Circuits: 1
• Voltage - Supply: 5V
• Current - Supply: 2.8mA
• Power (Watts): 730mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-24

封装: 24-SOIC (0.295", 7.50mm Width)

TC297TX128F300SBBKXUMA1

Infineon Technologies

IC MCU 32BIT 8MB FLASH 292LFBGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 300MHz
• Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT
• Peripherals: DMA, WDT
• Number of I/O: 263
• Program Memory Size: 8MB (8M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 384K x 8
• RAM Size: 2.75M x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: A/D 60x12b, 10 x Sigma-Delta
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 292-LFBGA
• Supplier Device Package: PG-LFBGA-292-6

封装: 292-LFBGA

BGF113E6328XTSA1

Infineon Technologies

IC FILTER/ESD PROT WLP-8-6

• Function: -
• Applications: -
• Number of Channels: -
• Interface: -
• Voltage - Supply: -
• Operating Temperature: -
• Specifications: -
• Package / Case: 8-UFBGA, WLCSP
• Supplier Device Package: WLP-8-6

封装: 8-UFBGA, WLCSP

IR3084UMPBF

Infineon Technologies

IC XPHASE CONTROL 28-MLPQ

• Applications: Processor
• Current - Supply: 14mA
• Voltage - Supply: 9.5 V ~ 16 V
• Operating Temperature: 0°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 28-VFQFN Exposed Pad
• Supplier Device Package: 28-MLPQ (5x5)

封装: 28-VFQFN Exposed Pad

DD700N22KXPSA1

Infineon Technologies

DIODE MOD 2200V 700A BGPB60E2A-1

• Diode Configuration: 1 Pair Series Connection
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): 2200 V
• Current - Average Rectified (Io) (per Diode): 700A
• Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 2.2 kV
• Operating Temperature - Junction: 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: BG-PB60E2A-1

封装: -

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S29PL064J60BFID20E

Infineon Technologies

IC FLASH NOR 48FBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CY62177G30-55BKXI

Infineon Technologies

IC SRAM 32MBIT PARALLEL 48FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 32Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55 ns
• Voltage - Supply: 2.2V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-FBGA (6x8)

封装: -

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S25FS064SAGMFV013

Infineon Technologies

STD SPI

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: 2ms
• Access Time: 6 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

封装: -

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FF6MR12W2M1PB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 200A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
• Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 80mA
• Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

封装: -

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IKFW75N60ETXKSA1

Infineon Technologies

IGBT TRENCH FS 600V 80A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
• Power - Max: 178 W
• Switching Energy: 2.7mJ (on), 2.35J (off)
• Input Type: Standard
• Gate Charge: 440 nC
• Td (on/off) @ 25°C: 33ns/340ns
• Test Condition: 400V, 75A, 5Ohm, 15V
• Reverse Recovery Time (trr): 107 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-AI

封装: -

BTS70402EPGXUMA1

Infineon Technologies

PROFET

• Switch Type: Relay, Solenoid Driver
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: Logic
• Voltage - Load: 3.1V ~ 18V
• Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
• Current - Output (Max): 3.5A
• Rds On (Typ): 19mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-14

封装: -

IPF014N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 267µA
• Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7-14
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封装: -

SIGC25T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 44ns/324ns
• Test Condition: 400V, 30A, 11Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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CYT2B73BADQ0AZEGS

Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 64LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 49
• Program Memory Size: 1.0625MB (1.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 96K x 8
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 45x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封装: -

FP35R12KT4B15BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2C-211

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 35 A
• Power - Max: 210 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2C

封装: -

S70KS1283GABHA020

Infineon Technologies

IC PSRAM 128MBIT SPI/OCTL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 128Mbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

封装: -

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