页 1327 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
W632GG8AB-11	Winbond Electronics	IC SDRAM 2GBIT 78WBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,320	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	933MHz	-	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	-	-	-
S70GL02GP11FAIR12	Cypress Semiconductor Corp	IC FLASH 2GBIT 110NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (256M x 8, 128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 110ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	封装: 64-LBGA	库存3,088	FLASH	FLASH - NOR	2Gb (256M x 8, 128M x 16)	Parallel	-	-	110ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
SST39VF800A-90-4I-B3KE	Microchip Technology	IC FLASH 8MBIT 90NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA	封装: 48-TFBGA	库存5,872	FLASH	FLASH	8Mb (512K x 16)	Parallel	-	20µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA
MT48H16M32LFCM-6 L IT:B	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (10x13)	封装: 90-VFBGA	库存34,800	DRAM	SDRAM - Mobile LPSDR	512Mb (16M x 32)	Parallel	166MHz	15ns	5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (10x13)
M28W320HSU70ZA6F TR	Micron Technology Inc.	IC FLASH 32MBIT 70NS 64TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-VFBGA Supplier Device Package: 64-TFBGA (10.5x6.39)	封装: 64-VFBGA	库存6,656	FLASH	FLASH - NOR	32Mb (2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-VFBGA	64-TFBGA (10.5x6.39)
71V35761S183BGG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 183MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 183MHz Write Cycle Time - Word, Page: - Access Time: 3.3ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: 119-BGA	库存5,136	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	183MHz	-	3.3ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
W25X32VZEIG T&R	Winbond Electronics	IC FLASH 32MBIT 75MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (4M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封装: 8-WDFN Exposed Pad	库存3,728	FLASH	FLASH	32Mb (4M x 8)	SPI	75MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
IS61VPS51236A-250B3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 250MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.6ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-FBGA Supplier Device Package: 165-PBGA (13x15)	封装: 165-FBGA	库存2,608	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	250MHz	-	2.6ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	165-FBGA	165-PBGA (13x15)
MT46V32M16FN-75 L:C	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 750ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (10x12.5)	封装: 60-TFBGA	库存7,888	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	133MHz	15ns	750ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (10x12.5)
AT25010AY1-10YI-2.7	Microchip Technology	IC EEPROM 1KBIT 20MHZ 8MAP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-MAP (3x4.9)	封装: 8-UDFN Exposed Pad	库存7,392	EEPROM	EEPROM	1Kb (128 x 8)	SPI	20MHz	5ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-MAP (3x4.9)
AT34C02N-10SC-2.7	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存92,652	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	10ms	900ns	2.7 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DS1220AB-120	Maxim Integrated	IC NVSRAM 16KBIT 120NS 24EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 120ns Access Time: 120ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 24-DIP Module (0.600", 15.24mm) Supplier Device Package: 24-EDIP	封装: 24-DIP Module (0.600", 15.24mm)	库存4,528	NVSRAM	NVSRAM (Non-Volatile SRAM)	16Kb (2K x 8)	Parallel	-	120ns	120ns	4.75 V ~ 5.25 V	0°C ~ 70°C (TA)	Through Hole	24-DIP Module (0.600", 15.24mm)	24-EDIP
MT29F16G08ADBCAH4:C TR	Micron Technology Inc.	IC FLASH 16GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: 63-VFBGA	库存5,312	FLASH	FLASH - NAND	16Gb (2G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
TC58NVG0S3HBAI6	Toshiba Semiconductor and Storage	IC EEPROM 1GBIT 25NS 67FBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	封装: 67-VFBGA	库存6,304	EEPROM	EEPROM - NAND	1Gb (128M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	67-VFBGA	67-VFBGA (6.5x8)
IS42S16100H-6TL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 166MHZ 50TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 50-TSOP (0.400", 10.16mm Width) Supplier Device Package: 50-TSOP II	封装: 50-TSOP (0.400", 10.16mm Width)	库存2,192	DRAM	SDRAM	16Mb (1M x 16)	Parallel	166MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
24C02C-E/SN	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 100kHz Write Cycle Time - Word, Page: 1.5ms Access Time: 3500ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存16,908	EEPROM	EEPROM	2Kb (256 x 8)	I2C	100kHz	1.5ms	3500ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT40A512M8RH-083E:B	Micron Technology Inc.	IC SDRAM 4GBIT 1.2GHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x10.5)	封装: 78-TFBGA	库存25,968	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x10.5)
BR93G86NUX-3TTR	Rohm Semiconductor	IC EEPROM 16KBIT 3MHZ 8VSON Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8, 1K x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: VSON008X2030	封装: 8-UFDFN Exposed Pad	库存34,236	EEPROM	EEPROM	16Kb (2K x 8, 1K x 16)	SPI	3MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	VSON008X2030
SST39WF400B-70-4I-VA	Microchip Technology	IC FLASH 4M PARALLEL Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 40µs Access Time: 70ns Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,352	FLASH	FLASH	4Mb (256K x 16)	Parallel	-	40µs	70ns	1.65 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
S29GL256P11TAI010	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	封装: 56-TFSOP (0.724", 18.40mm Width)	库存17,316	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	110ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
IS61NVF102418-6.5B3I-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封装: 165-TBGA	库存4,560	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	133MHz	-	6.5ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
MTFC4GACAAAM-1M WT TR	Micron Technology Inc.	IC FLASH 32GBIT 153VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,440	-	-	-	-	-	-	-	-	-	-	-	-
MTFC64GAPALBH-AIT TR	Micron Technology Inc.	IC FLASH 512G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,464	FLASH	FLASH - NAND	512Gb (64G x 8)	MMC	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-
S70KS1283GABHI020	Infineon Technologies	IC PSRAM 128MBIT SPI/OCTL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封装: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	128Mbit	SPI - Octal I/O	200 MHz	35ns	35 ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
UPD44645182AF5-E33-FQ1-A	Renesas Electronics Corporation	STANDARD SRAM, 4MX18, 0.45NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY7C199-8VCT	Cypress Semiconductor Corp	IC SRAM 256KBIT PARALLEL 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 8ns Access Time: 8 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	256Kbit	Parallel	-	8ns	8 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
IS45S32400J-6BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128MBIT PAR 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封装: -	Request a Quote	DRAM	SDRAM	128Mbit	LVTTL	166 MHz	-	5.4 ns	3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
MX35UF1G14AC-Z4I	Macronix	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 600µs Access Time: 8 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	1Gbit	Parallel	104 MHz	600µs	8 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)

W632GG8AB-11

Winbond Electronics

IC SDRAM 2GBIT 78WBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,320

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

933MHz

-

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

-

S70GL02GP11FAIR12

Cypress Semiconductor Corp

IC FLASH 2GBIT 110NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8, 128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 110ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

封装: 64-LBGA

库存3,088

FLASH

FLASH - NOR

2Gb (256M x 8, 128M x 16)

Parallel

-

110ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

SST39VF800A-90-4I-B3KE

Microchip Technology

IC FLASH 8MBIT 90NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA

封装: 48-TFBGA

库存5,872

FLASH

8Mb (512K x 16)

Parallel

-

20µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

MT48H16M32LFCM-6 L IT:B

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (10x13)

封装: 90-VFBGA

库存34,800

DRAM

SDRAM - Mobile LPSDR

512Mb (16M x 32)

Parallel

166MHz

15ns

5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (10x13)

M28W320HSU70ZA6F TR

Micron Technology Inc.

IC FLASH 32MBIT 70NS 64TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-VFBGA
Supplier Device Package: 64-TFBGA (10.5x6.39)

封装: 64-VFBGA

库存6,656

FLASH

FLASH - NOR

32Mb (2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-VFBGA

64-TFBGA (10.5x6.39)

71V35761S183BGG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 183MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 183MHz
Write Cycle Time - Word, Page: -
Access Time: 3.3ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

库存5,136

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

183MHz

-

3.3ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

W25X32VZEIG T&R

Winbond Electronics

IC FLASH 32MBIT 75MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封装: 8-WDFN Exposed Pad

库存3,728

FLASH

32Mb (4M x 8)

SPI

75MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

IS61VPS51236A-250B3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 250MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.6ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-FBGA
Supplier Device Package: 165-PBGA (13x15)

封装: 165-FBGA

库存2,608

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

250MHz

-

2.6ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

165-FBGA

165-PBGA (13x15)

MT46V32M16FN-75 L:C

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 750ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (10x12.5)

封装: 60-TFBGA

库存7,888

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

133MHz

15ns

750ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (10x12.5)

AT25010AY1-10YI-2.7

Microchip Technology

IC EEPROM 1KBIT 20MHZ 8MAP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-MAP (3x4.9)

封装: 8-UDFN Exposed Pad

库存7,392

EEPROM

1Kb (128 x 8)

SPI

20MHz

5ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-MAP (3x4.9)

AT34C02N-10SC-2.7

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存92,652

EEPROM

2Kb (256 x 8)

I2C

400kHz

10ms

900ns

2.7 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DS1220AB-120

Maxim Integrated

IC NVSRAM 16KBIT 120NS 24EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 24-DIP Module (0.600", 15.24mm)
Supplier Device Package: 24-EDIP

封装: 24-DIP Module (0.600", 15.24mm)

库存4,528

NVSRAM

NVSRAM (Non-Volatile SRAM)

16Kb (2K x 8)

Parallel

-

120ns

4.75 V ~ 5.25 V

0°C ~ 70°C (TA)

Through Hole

24-DIP Module (0.600", 15.24mm)

24-EDIP

MT29F16G08ADBCAH4:C TR

Micron Technology Inc.

IC FLASH 16GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

库存5,312

FLASH

FLASH - NAND

16Gb (2G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

TC58NVG0S3HBAI6

Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 67FBGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 67-VFBGA
Supplier Device Package: 67-VFBGA (6.5x8)

封装: 67-VFBGA

库存6,304

EEPROM

EEPROM - NAND

1Gb (128M x 8)

Parallel

-

25ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

67-VFBGA

67-VFBGA (6.5x8)

IS42S16100H-6TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 50TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II

封装: 50-TSOP (0.400", 10.16mm Width)

库存2,192

DRAM

SDRAM

16Mb (1M x 16)

Parallel

166MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

50-TSOP (0.400", 10.16mm Width)

50-TSOP II

24C02C-E/SN

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: 3500ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存16,908

EEPROM

2Kb (256 x 8)

I2C

100kHz

1.5ms

3500ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT40A512M8RH-083E:B

Micron Technology Inc.

IC SDRAM 4GBIT 1.2GHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x10.5)

封装: 78-TFBGA

库存25,968

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x10.5)

BR93G86NUX-3TTR

Rohm Semiconductor

IC EEPROM 16KBIT 3MHZ 8VSON

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8, 1K x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030

封装: 8-UFDFN Exposed Pad

库存34,236

EEPROM

16Kb (2K x 8, 1K x 16)

SPI

3MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

VSON008X2030

SST39WF400B-70-4I-VA

Microchip Technology

IC FLASH 4M PARALLEL

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 40µs
Access Time: 70ns
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,352

FLASH

4Mb (256K x 16)

Parallel

-

40µs

70ns

1.65 V ~ 1.95 V

-40°C ~ 85°C (TA)

-

S29GL256P11TAI010

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

封装: 56-TFSOP (0.724", 18.40mm Width)

库存17,316

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

IS61NVF102418-6.5B3I-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封装: 165-TBGA

库存4,560

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

133MHz

-

6.5ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

MTFC4GACAAAM-1M WT TR

Micron Technology Inc.

IC FLASH 32GBIT 153VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,440

-

MTFC64GAPALBH-AIT TR

Micron Technology Inc.

IC FLASH 512G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,464

FLASH

FLASH - NAND

512Gb (64G x 8)

MMC

-

-40°C ~ 85°C (TA)

-

S70KS1283GABHI020

Infineon Technologies

IC PSRAM 128MBIT SPI/OCTL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封装: -

Request a Quote

PSRAM

PSRAM (Pseudo SRAM)

128Mbit

SPI - Octal I/O

200 MHz

35ns

35 ns

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

UPD44645182AF5-E33-FQ1-A

Renesas Electronics Corporation

STANDARD SRAM, 4MX18, 0.45NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

CY7C199-8VCT

Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

256Kbit

Parallel

-

8ns

8 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

IS45S32400J-6BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封装: -

Request a Quote

DRAM

SDRAM

128Mbit

LVTTL

166 MHz

-

5.4 ns

3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

MX35UF1G14AC-Z4I

Macronix

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 600µs
Access Time: 8 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封装: -

Request a Quote

FLASH

FLASH - NAND (SLC)

1Gbit

Parallel

104 MHz

600µs

8 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)