页 1510 - 存储器 | 集成电路（IC） | 黑森尔电子
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存储器

记录 62,144
页  1,510/2,220
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AT49BV640DT-70CU
Microchip Technology

IC FLASH 64MBIT 70NS 48CBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 120µs
  • Access Time: 70ns
  • Voltage - Supply: 2.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA, CSPBGA
  • Supplier Device Package: 48-CBGA (7x10)
封装: 48-TFBGA, CSPBGA
库存2,608
FLASH
FLASH
64Mb (4M x 16)
Parallel
-
120µs
70ns
2.65 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
48-TFBGA, CSPBGA
48-CBGA (7x10)
MT48LC64M4A2P-75:D
Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (64M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封装: 54-TSOP (0.400", 10.16mm Width)
库存5,840
DRAM
SDRAM
256Mb (64M x 4)
Parallel
133MHz
15ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
AT28HC256-90LM/883-696
Microchip Technology

IC EEPROM 256KBIT 90NS 32CLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,136
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
90ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
-
-
-
70V639S15BF
IDT, Integrated Device Technology Inc

IC SRAM 2.25MBIT 15NS 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 2.25Mb (128K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
封装: 208-LFBGA
库存6,432
SRAM
SRAM - Dual Port, Asynchronous
2.25Mb (128K x 18)
Parallel
-
15ns
15ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
7007S35PF
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 35NS 80TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-TQFP (14x14)
封装: 80-LQFP
库存6,272
SRAM
SRAM - Dual Port, Asynchronous
256Kb (32K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
80-LQFP
80-TQFP (14x14)
71256S55TDB
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 28CDIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 28-CDIP
封装: 28-CDIP (0.300", 7.62mm)
库存4,672
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Through Hole
28-CDIP (0.300", 7.62mm)
28-CDIP
7140SA55PF
IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 55NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
封装: 64-LQFP
库存5,328
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
71016S20YGI8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
封装: 44-BSOJ (0.400", 10.16mm Width)
库存3,120
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
W25Q40EWSNIG TR
Winbond Electronics

IC FLASH 4MBIT 80MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 800µs
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,088
FLASH
FLASH - NOR
4Mb (512K x 8)
SPI
104MHz
800µs
-
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot CY7C2265KV18-550BZXC
Cypress Semiconductor Corp

IC SRAM 36MBIT 550MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 550MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
封装: 165-LBGA
库存5,344
SRAM
SRAM - Synchronous, QDR II+
36Mb (1M x 36)
Parallel
550MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
hot M95640-DRMN3TP/K
STMicroelectronics

IC EEPROM 64KBIT 20MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存90,000
EEPROM
EEPROM
64Kb (8K x 8)
SPI
20MHz
4ms
-
1.8 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
MT29F4G08ABBFAH4-AATES:F
Micron Technology Inc.

IC FLASH 4G PARALLEL FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,248
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
-
-
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
-
-
-
S29PL032J55BFI120
Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-FBGA (8.15x6.15)
封装: 48-VFBGA
库存4,368
FLASH
FLASH - NOR
32Mb (2M x 16)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-FBGA (8.15x6.15)
IS43DR82560C-3DBLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 60TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TWBGA (8x10.5)
封装: 60-TFBGA
库存3,392
DRAM
SDRAM - DDR2
2Gb (256M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TWBGA (8x10.5)
W25Q64CVZEJG
Winbond Electronics

IC FLASH MEMORY 64MB

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,144
-
-
-
-
-
-
-
-
-
-
-
-
MT29F64G08CBABBWPR:B
Micron Technology Inc.

IC FLASH 64G PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,200
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
CY27H010-35WC
Cypress Semiconductor Corp

IC EPROM 1MBIT PARALLEL 32CDIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - UV
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 35 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-CDIP (0.600", 15.24mm) Window
  • Supplier Device Package: 32-CDIP
封装: -
Request a Quote
EPROM
EPROM - UV
1Mbit
Parallel
-
-
35 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Through Hole
32-CDIP (0.600", 15.24mm) Window
32-CDIP
CG8868AM
Infineon Technologies

NVSRAM

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SM662GBF-BFSS
Silicon Motion, Inc.

IC FLASH 960GBIT EMMC 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 960Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-BGA (14x18)
封装: -
库存15
FLASH
FLASH - NAND (SLC)
960Gbit
eMMC
-
-
-
-
-40°C ~ 105°C
Surface Mount
100-LBGA
100-BGA (14x18)
BR24G32NUX-5TR
Rohm Semiconductor

IC EEPROM 32KBIT I2C 8VSON

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: VSON008X2030
封装: -
库存11,382
EEPROM
EEPROM
32Kbit
I2C
1 MHz
5ms
-
1.6V ~ 5.5V
-40°C ~ 85°C
Surface Mount
8-UFDFN Exposed Pad
VSON008X2030
N24C04UDTG
onsemi

EEPROM, 4KX1, SERIAL, CMOS, PDSO

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
BR24G512F-5AE2
Rohm Semiconductor

512K BIT, IC BUS, HIGH SPEED WRI

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 3.5ms
  • Access Time: -
  • Voltage - Supply: 1.6V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
封装: -
库存7,500
EEPROM
EEPROM
512Kbit
I2C
1 MHz
3.5ms
-
1.6V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
IS26KS512S-DPBLA100-TR
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
AM27S191-BUA
Advanced Micro Devices

IC PROM 16KBIT PARALLEL 32CLCC

  • Memory Type: Non-Volatile
  • Memory Format: PROM
  • Technology: -
  • Memory Size: 16Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 65 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-CLCC
  • Supplier Device Package: 32-CLCC
封装: -
Request a Quote
PROM
-
16Kbit
Parallel
-
-
65 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TC)
Surface Mount
32-CLCC
32-CLCC
GS8256436GB-400I
GSI Technology Inc.

IC SRAM 288MBIT PAR 119FPBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, Standard
  • Memory Size: 288Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-FPBGA (22x14)
封装: -
Request a Quote
SRAM
SRAM - Synchronous, Standard
288Mbit
Parallel
400 MHz
-
-
2.3V ~ 2.7V, 3V ~ 3.6V
-40°C ~ 100°C (TJ)
Surface Mount
119-BGA
119-FPBGA (22x14)
CAT25010LI-GD
onsemi

IC EEPROM 1KBIT SPI 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: SPI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封装: -
Request a Quote
EEPROM
EEPROM
1Kbit
SPI
-
5ms
-
1.8V ~ 5.5V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
AS4C256M16D3LC-12BANTR
Alliance Memory, Inc.

IC DRAM 4GBIT PARALLEL 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (7.5x13.5)
封装: -
Request a Quote
DRAM
SDRAM - DDR3L
4Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-FBGA (7.5x13.5)
M3004316035NX0ITBY
Renesas Electronics Corporation

M3004316 MRAM PARALLEL 4MB X16 3

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP
封装: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
4Mbit
Parallel
-
35ns
35 ns
2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP