页 2120 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AT24C16D-MAHM-T	Microchip Technology	IC EEPROM 16KBIT 1MHZ 8MINIMAP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封装: 8-UFDFN Exposed Pad	库存5,888	EEPROM	EEPROM	16Kb (2K x 8)	I2C	1MHz	5ms	450ns	1.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
MT42L256M32D2LK-18 WT:A	Micron Technology Inc.	IC SDRAM 8GBIT 533MHZ 216FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 216-WFBGA Supplier Device Package: 216-FBGA (12x12)	封装: 216-WFBGA	库存24,276	DRAM	SDRAM - Mobile LPDDR2	8Gb (256M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	Surface Mount	216-WFBGA	216-FBGA (12x12)
CY7C1470BV25-200BZIT	Cypress Semiconductor Corp	IC SRAM 72MBIT 200MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: 165-LBGA	库存4,112	SRAM	SRAM - Synchronous	72Mb (2M x 36)	Parallel	200MHz	-	3ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
IDT71T75902S80BG8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 8NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: 119-BGA	库存6,992	SRAM	SRAM - Synchronous ZBT	18Mb (1M x 18)	Parallel	-	-	8ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
70V5388S166BC8	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 166MHZ 256BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	封装: 256-LBGA	库存4,608	SRAM	SRAM - Quad Port, Synchronous	1.125Mb (64K x 18)	Parallel	166MHz	-	3.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
CY7C1440AV33-250AXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.6ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存14,280	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	250MHz	-	2.6ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
W25X80VZPIG	Winbond Electronics	IC FLASH 8MBIT 75MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封装: 8-WDFN Exposed Pad	库存62,064	FLASH	FLASH	8Mb (1M x 8)	SPI	75MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
DS1265AB-100	Maxim Integrated	IC NVSRAM 8MBIT 100NS 36EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 8Mb (1M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 36-DIP Module (0.600", 15.24mm) Supplier Device Package: 36-EDIP	封装: 36-DIP Module (0.600", 15.24mm)	库存6,816	NVSRAM	NVSRAM (Non-Volatile SRAM)	8Mb (1M x 8)	Parallel	-	100ns	100ns	4.75 V ~ 5.25 V	0°C ~ 70°C (TA)	Through Hole	36-DIP Module (0.600", 15.24mm)	36-EDIP
AT49BV040-12JC	Microchip Technology	IC FLASH 4MBIT 120NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封装: 32-LCC (J-Lead)	库存5,952	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	50µs	120ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
CY7C2644KV18-333BZI	Cypress Semiconductor Corp	IC SRAM 144MBIT 333MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 144Mb (4M x 36) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: 165-LBGA	库存5,712	SRAM	SRAM - Synchronous, QDR II+	144Mb (4M x 36)	Parallel	333MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
N25Q256A13ESF40G	Micron Technology Inc.	IC FLASH 256MBIT 108MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (64M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	封装: 16-SOIC (0.295", 7.50mm Width)	库存4,304	FLASH	FLASH - NOR	256Mb (64M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
W25Q128JVEIQ TR	Winbond Electronics	IC FLASH 128MBIT 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封装: 8-WDFN Exposed Pad	库存3,968	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	133MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
M95256-DRMN6TP	STMicroelectronics	IC EEPROM 256KBIT 2MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,600	EEPROM	EEPROM	256Kb (32K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FT24C32A-UTG-B	Fremont Micro Devices USA	IC EEPROM 32KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 800kHz Write Cycle Time - Word, Page: 5ms Access Time: 700ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存4,112	EEPROM	EEPROM	32Kb (4K x 8)	I2C	800kHz	5ms	700ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SST39LF040-55-4C-NHE	Microchip Technology	IC FLASH 4MBIT 55NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封装: 32-LCC (J-Lead)	库存18,000	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	20µs	55ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC
CY7C0852AV-133AXI	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 133MHZ 176TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Supplier Device Package: 176-TQFP (24x24)	封装: 176-LQFP	库存3,920	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	-	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	176-LQFP	176-TQFP (24x24)
M95020-DRMF3TG/K	STMicroelectronics	IC EEPROM 2KBIT 20MHZ 8UFDFPN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-MLP (2x3)	封装: 8-WFDFN Exposed Pad	库存20,382	EEPROM	EEPROM	2Kb (256 x 8)	SPI	20MHz	4ms	-	1.8 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-MLP (2x3)
S29GL032N90BFA043	Cypress Semiconductor Corp	IC 32M FLASH MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,336	-	-	-	-	-	-	-	-	-	-	-	-
16-3508-02	Infineon Technologies	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT58L512L18FT-8-5	Micron Technology Inc.	IC SRAM 8MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 8.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封装: -	Request a Quote	SRAM	SRAM - Standard	8Mbit	Parallel	100 MHz	-	8.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
W97AH6NBVA1E-TR	Winbond Electronics	IC DRAM 1GBIT HSUL 12 134VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4B Memory Size: 1Gbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4B	1Gbit	HSUL_12	533 MHz	15ns	-	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
MT62F3G32D8DV-023-AAT-B-TR	Micron Technology Inc.	LPDDR5 96G 3GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 96Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	96Gbit	Parallel	4.266 GHz	-	-	-	-40°C ~ 105°C	-	-	-
IS46TR16256AL-107MBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
111292	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W9751G8NB25I	Winbond Electronics	IC DRAM 512MBIT PAR 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mbit Memory Interface: Parallel Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 57.5 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR2	512Mbit	Parallel	400 MHz	15ns	57.5 ns	1.7V ~ 1.9V	-40°C ~ 95°C (TC)	Surface Mount	60-VFBGA	60-VFBGA (8x9.5)
8611200977	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY62157GE30-45ZXI	Infineon Technologies	IC SRAM 8MBIT PARALLEL 48TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	8Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT58L64L18CT-10	Micron Technology Inc.	CACHE SRAM, 64KX18, 5NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

AT24C16D-MAHM-T

Microchip Technology

IC EEPROM 16KBIT 1MHZ 8MINIMAP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封装: 8-UFDFN Exposed Pad

库存5,888

EEPROM

16Kb (2K x 8)

I2C

1MHz

5ms

450ns

1.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

MT42L256M32D2LK-18 WT:A

Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 216FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 216-WFBGA
Supplier Device Package: 216-FBGA (12x12)

封装: 216-WFBGA

库存24,276

DRAM

SDRAM - Mobile LPDDR2

8Gb (256M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

Surface Mount

216-WFBGA

216-FBGA (12x12)

CY7C1470BV25-200BZIT

Cypress Semiconductor Corp

IC SRAM 72MBIT 200MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: 165-LBGA

库存4,112

SRAM

SRAM - Synchronous

72Mb (2M x 36)

Parallel

200MHz

-

3ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

IDT71T75902S80BG8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 8NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

库存6,992

SRAM

SRAM - Synchronous ZBT

18Mb (1M x 18)

Parallel

-

8ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

70V5388S166BC8

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 166MHZ 256BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

封装: 256-LBGA

库存4,608

SRAM

SRAM - Quad Port, Synchronous

1.125Mb (64K x 18)

Parallel

166MHz

-

3.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

CY7C1440AV33-250AXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.6ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存14,280

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

250MHz

-

2.6ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

W25X80VZPIG

Winbond Electronics

IC FLASH 8MBIT 75MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封装: 8-WDFN Exposed Pad

库存62,064

FLASH

8Mb (1M x 8)

SPI

75MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

DS1265AB-100

Maxim Integrated

IC NVSRAM 8MBIT 100NS 36EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 8Mb (1M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 36-DIP Module (0.600", 15.24mm)
Supplier Device Package: 36-EDIP

封装: 36-DIP Module (0.600", 15.24mm)

库存6,816

NVSRAM

NVSRAM (Non-Volatile SRAM)

8Mb (1M x 8)

Parallel

-

100ns

4.75 V ~ 5.25 V

0°C ~ 70°C (TA)

Through Hole

36-DIP Module (0.600", 15.24mm)

36-EDIP

AT49BV040-12JC

Microchip Technology

IC FLASH 4MBIT 120NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

库存5,952

FLASH

4Mb (512K x 8)

Parallel

-

50µs

120ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

CY7C2644KV18-333BZI

Cypress Semiconductor Corp

IC SRAM 144MBIT 333MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 144Mb (4M x 36)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: 165-LBGA

库存5,712

SRAM

SRAM - Synchronous, QDR II+

144Mb (4M x 36)

Parallel

333MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

N25Q256A13ESF40G

Micron Technology Inc.

IC FLASH 256MBIT 108MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (64M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

封装: 16-SOIC (0.295", 7.50mm Width)

库存4,304

FLASH

FLASH - NOR

256Mb (64M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

W25Q128JVEIQ TR

Winbond Electronics

IC FLASH 128MBIT 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封装: 8-WDFN Exposed Pad

库存3,968

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

133MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

M95256-DRMN6TP

STMicroelectronics

IC EEPROM 256KBIT 2MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,600

EEPROM

256Kb (32K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FT24C32A-UTG-B

Fremont Micro Devices USA

IC EEPROM 32KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 800kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 700ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存4,112

EEPROM

32Kb (4K x 8)

I2C

800kHz

5ms

700ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SST39LF040-55-4C-NHE

Microchip Technology

IC FLASH 4MBIT 55NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

库存18,000

FLASH

4Mb (512K x 8)

Parallel

-

20µs

55ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC

CY7C0852AV-133AXI

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 133MHZ 176TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Supplier Device Package: 176-TQFP (24x24)

封装: 176-LQFP

库存3,920

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

176-LQFP

176-TQFP (24x24)

M95020-DRMF3TG/K

STMicroelectronics

IC EEPROM 2KBIT 20MHZ 8UFDFPN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-MLP (2x3)

封装: 8-WFDFN Exposed Pad

库存20,382

EEPROM

2Kb (256 x 8)

SPI

20MHz

4ms

-

1.8 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-MLP (2x3)

S29GL032N90BFA043

Cypress Semiconductor Corp

IC 32M FLASH MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,336

-

16-3508-02

Infineon Technologies

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT58L512L18FT-8-5

Micron Technology Inc.

IC SRAM 8MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封装: -

Request a Quote

SRAM

SRAM - Standard

8Mbit

Parallel

100 MHz

-

8.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

W97AH6NBVA1E-TR

Winbond Electronics

IC DRAM 1GBIT HSUL 12 134VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4B
Memory Size: 1Gbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4B

1Gbit

HSUL_12

533 MHz

15ns

-

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

MT62F3G32D8DV-023-AAT-B-TR

Micron Technology Inc.

LPDDR5 96G 3GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 96Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

96Gbit

Parallel

4.266 GHz

-

-40°C ~ 105°C

-

IS46TR16256AL-107MBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

Request a Quote

DRAM

SDRAM - DDR3L

4Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

111292

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

W9751G8NB25I

Winbond Electronics

IC DRAM 512MBIT PAR 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mbit
Memory Interface: Parallel
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 57.5 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9.5)

封装: -

Request a Quote

DRAM

SDRAM - DDR2

512Mbit

Parallel

400 MHz

15ns

57.5 ns

1.7V ~ 1.9V

-40°C ~ 95°C (TC)

Surface Mount

60-VFBGA

60-VFBGA (8x9.5)

8611200977

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

CY62157GE30-45ZXI

Infineon Technologies

IC SRAM 8MBIT PARALLEL 48TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

8Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT58L64L18CT-10

Micron Technology Inc.

CACHE SRAM, 64KX18, 5NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-