页 364 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S25FL064LABMFA003	Cypress Semiconductor Corp	IC FLASH NOR SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,168	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
AS4C256M16D3-12BCN	Alliance Memory, Inc.	IC SDRAM 4GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (13x9)	封装: 96-TFBGA	库存6,368	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (13x9)
MTFC16GJVEC-IT	Micron Technology Inc.	IC FLASH 128GBIT 169WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	封装: -	库存6,960	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
M29F200FT5AN6F2 TR	Micron Technology Inc.	IC FLASH 2MBIT 55NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8, 128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封装: 48-TFSOP (0.724", 18.40mm Width)	库存7,312	FLASH	FLASH - NOR	2Mb (256K x 8, 128K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
MT46H128M32L2MC-5 IT:A	Micron Technology Inc.	IC SDRAM 4GBIT 200MHZ 240WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 240-WFBGA Supplier Device Package: 240-WFBGA (14x14)	封装: 240-WFBGA	库存6,864	DRAM	SDRAM - Mobile LPDDR	4Gb (128M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	240-WFBGA	240-WFBGA (14x14)
IDT70P27L12PFG	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 12NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存4,000	SRAM	SRAM - Dual Port, Asynchronous	512Kb (32K x 16)	Parallel	-	12ns	12ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V35761YSA200BQ8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 200MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存5,024	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
7132LA100P	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 100NS 48DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-PDIP	封装: 48-DIP (0.600", 15.24mm)	库存3,120	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	100ns	100ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-PDIP
CY7C1319CV18-250BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封装: 165-LBGA	库存8,928	SRAM	SRAM - Synchronous, DDR II	18Mb (1M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY7C1512V18-167BZXC	Cypress Semiconductor Corp	IC SRAM 72MBIT 167MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: 165-LBGA	库存6,612	SRAM	SRAM - Synchronous, QDR II	72Mb (4M x 18)	Parallel	167MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
AT29LV512-15JU-T	Microchip Technology	IC FLASH 512KBIT 150NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ms Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (11.43x13.97)	封装: 32-LCC (J-Lead)	库存5,568	FLASH	FLASH	512Kb (64K x 8)	Parallel	-	20ms	150ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC (11.43x13.97)
AT27C512R-55TC	Microchip Technology	IC OTP 512KBIT 55NS 28TSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	封装: 28-TSSOP (0.465", 11.80mm Width)	库存3,792	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
MT53B256M64D2NW-062 WT:C	Micron Technology Inc.	IC SDRAM 16GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,512	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
71V424L15YGI	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 15NS 36SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 36-SOJ	封装: 36-BSOJ (0.400", 10.16mm Width)	库存2,752	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	36-BSOJ (0.400", 10.16mm Width)	36-SOJ
S29GL512T10FAI013	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,832	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
CY14MB064Q2A-SXQ	Cypress Semiconductor Corp	IC NVSRAM 64KBIT 40MHZ 8SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,904	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	SPI	40MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AS6C6264-55SINTR	Alliance Memory, Inc.	IC SRAM 64KBIT 55NS 28SOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.330", 8.38mm Width) Supplier Device Package: 28-SOP	封装: 28-SOIC (0.330", 8.38mm Width)	库存7,184	SRAM	SRAM - Asynchronous	64Kb (8K x 8)	Parallel	-	55ns	55ns	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.330", 8.38mm Width)	28-SOP
34VL02/SN	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.5 V ~ 3.6 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,792	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.5 V ~ 3.6 V	-20°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DS1245WP-100IND+	Maxim Integrated	IC NVSRAM 1MBIT 100NS 34PCM Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 34-PowerCap? Module Supplier Device Package: 34-PowerCap Module	封装: 34-PowerCap? Module	库存4,800	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	100ns	100ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	34-PowerCap? Module	34-PowerCap Module
93AA86C/W15K	Microchip Technology	IC EEPROM 16K SPI 3MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8, 1K x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存5,712	EEPROM	EEPROM	16Kb (2K x 8, 1K x 16)	SPI	3MHz	5ms	-	1.8 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	Die	Die
MT41K1G8SN-125:A TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x13.2)	封装: 78-TFBGA	库存3,184	DRAM	SDRAM - DDR3L	8Gb (1G x 8)	Parallel	800MHz	-	13.75ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x13.2)
BR24T02FV-WGE2	Rohm Semiconductor	I2C BUS 2KBIT(256X8BIT) EEPROM Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-SSOPB	封装: 8-TSSOP (0.173", 4.40mm Width)	库存3,152	EEPROM	EEPROM	2Kb (256 x 8)	I²C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-SSOPB
MT29F256G08CECEBJ4-37ITRES:E TR	Micron Technology Inc.	MLC 256G 32GX8 VBGA IT DDP L05B Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,888	-	-	-	-	-	-	-	-	-	-	-	-
MT53E256M32D2DS-053 AAT:B TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -30°C ~ 105°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	封装: -	库存2,528	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-30°C ~ 105°C	Surface Mount	-	-
MT62F1G64D4ZX-023-WT-C-TR	Micron Technology Inc.	LPDDR5 64G X64 UFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CAT25640HU4I-GT3MA	onsemi	CAT25640 - 64-KBIT SPI SERIAL EE Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
HM1-65262-883	Harris Corporation	IC SRAM 16KBIT PARALLEL 20CERDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 85ns Access Time: 85 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-CERDIP	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	16Kbit	Parallel	-	85ns	85 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole	20-DIP (0.300", 7.62mm)	20-CERDIP
MT58L256L36PF-7-5-IT	Micron Technology Inc.	IC SRAM 8MBIT PARALLEL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM - Standard	8Mbit	Parallel	133 MHz	-	4 ns	3.135V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)

S25FL064LABMFA003

Cypress Semiconductor Corp

IC FLASH NOR SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,168

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

AS4C256M16D3-12BCN

Alliance Memory, Inc.

IC SDRAM 4GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13x9)

封装: 96-TFBGA

库存6,368

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (13x9)

MTFC16GJVEC-IT

Micron Technology Inc.

IC FLASH 128GBIT 169WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

封装: -

库存6,960

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

-

M29F200FT5AN6F2 TR

Micron Technology Inc.

IC FLASH 2MBIT 55NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8, 128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

库存7,312

FLASH

FLASH - NOR

2Mb (256K x 8, 128K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

MT46H128M32L2MC-5 IT:A

Micron Technology Inc.

IC SDRAM 4GBIT 200MHZ 240WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 240-WFBGA
Supplier Device Package: 240-WFBGA (14x14)

封装: 240-WFBGA

库存6,864

DRAM

SDRAM - Mobile LPDDR

4Gb (128M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

240-WFBGA

240-WFBGA (14x14)

IDT70P27L12PFG

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 12NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存4,000

SRAM

SRAM - Dual Port, Asynchronous

512Kb (32K x 16)

Parallel

-

12ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V35761YSA200BQ8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存5,024

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

7132LA100P

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 100NS 48DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-PDIP

封装: 48-DIP (0.600", 15.24mm)

库存3,120

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-PDIP

CY7C1319CV18-250BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封装: 165-LBGA

库存8,928

SRAM

SRAM - Synchronous, DDR II

18Mb (1M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY7C1512V18-167BZXC

Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: 165-LBGA

库存6,612

SRAM

SRAM - Synchronous, QDR II

72Mb (4M x 18)

Parallel

167MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

AT29LV512-15JU-T

Microchip Technology

IC FLASH 512KBIT 150NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ms
Access Time: 150ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.43x13.97)

封装: 32-LCC (J-Lead)

库存5,568

FLASH

512Kb (64K x 8)

Parallel

-

20ms

150ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC (11.43x13.97)

AT27C512R-55TC

Microchip Technology

IC OTP 512KBIT 55NS 28TSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

封装: 28-TSSOP (0.465", 11.80mm Width)

库存3,792

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

MT53B256M64D2NW-062 WT:C

Micron Technology Inc.

IC SDRAM 16GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,512

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

71V424L15YGI

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 15NS 36SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 36-SOJ

封装: 36-BSOJ (0.400", 10.16mm Width)

库存2,752

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

15ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

36-BSOJ (0.400", 10.16mm Width)

36-SOJ

S29GL512T10FAI013

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,832

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

CY14MB064Q2A-SXQ

Cypress Semiconductor Corp

IC NVSRAM 64KBIT 40MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,904

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

SPI

40MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AS6C6264-55SINTR

Alliance Memory, Inc.

IC SRAM 64KBIT 55NS 28SOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.330", 8.38mm Width)
Supplier Device Package: 28-SOP

封装: 28-SOIC (0.330", 8.38mm Width)

库存7,184

SRAM

SRAM - Asynchronous

64Kb (8K x 8)

Parallel

-

55ns

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-SOIC (0.330", 8.38mm Width)

28-SOP

34VL02/SN

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.5 V ~ 3.6 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,792

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.5 V ~ 3.6 V

-20°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DS1245WP-100IND+

Maxim Integrated

IC NVSRAM 1MBIT 100NS 34PCM

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-PowerCap? Module
Supplier Device Package: 34-PowerCap Module

封装: 34-PowerCap? Module

库存4,800

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

100ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

34-PowerCap? Module

34-PowerCap Module

93AA86C/W15K

Microchip Technology

IC EEPROM 16K SPI 3MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8, 1K x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存5,712

EEPROM

16Kb (2K x 8, 1K x 16)

SPI

3MHz

5ms

-

1.8 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

Die

MT41K1G8SN-125:A TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x13.2)

封装: 78-TFBGA

库存3,184

DRAM

SDRAM - DDR3L

8Gb (1G x 8)

Parallel

800MHz

-

13.75ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x13.2)

BR24T02FV-WGE2

Rohm Semiconductor

I2C BUS 2KBIT(256X8BIT) EEPROM

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-SSOPB

封装: 8-TSSOP (0.173", 4.40mm Width)

库存3,152

EEPROM

2Kb (256 x 8)

I²C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-SSOPB

MT29F256G08CECEBJ4-37ITRES:E TR

Micron Technology Inc.

MLC 256G 32GX8 VBGA IT DDP L05B

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,888

-

MT53E256M32D2DS-053 AAT:B TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -30°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

封装: -

库存2,528

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1.866GHz

-

0.6V, 1.1V

-30°C ~ 105°C

Surface Mount

-

MT62F1G64D4ZX-023-WT-C-TR

Micron Technology Inc.

LPDDR5 64G X64 UFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

CAT25640HU4I-GT3MA

onsemi

CAT25640 - 64-KBIT SPI SERIAL EE

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

HM1-65262-883

Harris Corporation

IC SRAM 16KBIT PARALLEL 20CERDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 85ns
Access Time: 85 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-CERDIP

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

16Kbit

Parallel

-

85ns

85 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Through Hole

20-DIP (0.300", 7.62mm)

20-CERDIP

MT58L256L36PF-7-5-IT

Micron Technology Inc.

IC SRAM 8MBIT PARALLEL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

封装: -

Request a Quote

SRAM

SRAM - Standard

8Mbit

Parallel

133 MHz

-

4 ns

3.135V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)