页 754 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EDF8164A3MA-JD-F-R TR	Micron Technology Inc.	IC SDRAM 8GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,024	DRAM	SDRAM - Mobile LPDDR3	8Gb (128M x 64)	Parallel	933MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
MT29F32G08AECCBH1-10:C TR	Micron Technology Inc.	IC FLASH 32GBIT 100MHZ 100VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,624	FLASH	FLASH - NAND	32Gb (4G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
M25P40-VMC6GB	Micron Technology Inc.	IC FLASH 4MBIT 75MHZ 8UFDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Supplier Device Package: 8-UFDFPN (MLP8) (4x3)	封装: 8-UDFN	库存6,080	FLASH	FLASH - NOR	4Mb (512K x 8)	SPI	75MHz	15ms, 5ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN	8-UFDFPN (MLP8) (4x3)
MTFC16GLXDV-WT TR	Micron Technology Inc.	IC FLASH 128GBIT 169VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	封装: -	库存4,784	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	-	-
CY7C1480BV33-167AXC	Cypress Semiconductor Corp	IC SRAM 72MBIT 167MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存7,504	SRAM	SRAM - Synchronous	72Mb (2M x 36)	Parallel	167MHz	-	3.4ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
CY7C1415AV18-250BZC	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: 165-LBGA	库存4,400	SRAM	SRAM - Synchronous, QDR II	36Mb (1M x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
CY7C1356CV25-200AXC	Cypress Semiconductor Corp	IC SRAM 9MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.2ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存7,328	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	200MHz	-	3.2ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
CY7C1021B-15VXI	Cypress Semiconductor Corp	IC SRAM 1MBIT 15NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	封装: 44-BSOJ (0.400", 10.16mm Width)	库存5,024	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
CY7C1019CV33-12ZXCT	Cypress Semiconductor Corp	IC SRAM 1MBIT 12NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.400", 10.16mm Width) Supplier Device Package: 32-TSOP II	封装: 32-SOIC (0.400", 10.16mm Width)	库存3,328	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	32-SOIC (0.400", 10.16mm Width)	32-TSOP II
MT48LC8M16LFB4-8 IT:G TR	Micron Technology Inc.	IC SDRAM 128MBIT 125MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 125MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x8)	封装: 54-VFBGA	库存4,160	DRAM	SDRAM - Mobile LPSDR	128Mb (8M x 16)	Parallel	125MHz	15ns	7ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x8)
RC28F160C3BD70A	Micron Technology Inc.	IC FLASH 16MBIT 70NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - Boot Block Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	封装: 64-TBGA	库存10,764	FLASH	FLASH - Boot Block	16Mb (1M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
AT34C02-10PI-2.5	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存6,208	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	10ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS61QDP2B24M18A-333M3L	ISSI, Integrated Silicon Solution Inc	IC SRAM 72MBIT 333MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QUADP Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (15x17)	封装: 165-LBGA	库存2,208	SRAM	SRAM - Synchronous, QUADP	72Mb (4M x 18)	Parallel	333MHz	-	8.4ns	1.71 V ~ 1.89 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-LFBGA (15x17)
71V65803S100BGG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 100MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: 119-BGA	库存7,456	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
EDW4032BABG-70-F-D	Micron Technology Inc.	IC SGRAM 4GBIT 1.75GHZ 170FBGA Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 1.75GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.31 V ~ 1.65 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 170-TFBGA Supplier Device Package: 170-FBGA (12x14)	封装: 170-TFBGA	库存6,224	RAM	SGRAM - GDDR5	4Gb (128M x 32)	Parallel	1.75GHz	-	-	1.31 V ~ 1.65 V	0°C ~ 95°C (TC)	Surface Mount	170-TFBGA	170-FBGA (12x14)
24AA16HT-I/MS	Microchip Technology	IC EEPROM 16KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存5,904	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
CY7C1357C-133AXC	Cypress Semiconductor Corp	IC SRAM 9MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存4,688	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
S29PL127J70BAI003	Cypress Semiconductor Corp	IC FLASH 128M PARALLEL 80FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-VFBGA Supplier Device Package: 80-FBGA (8x11)	封装: 80-VFBGA	库存4,848	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	80-VFBGA	80-FBGA (8x11)
IS66WV51216EALL-70BLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封装: 48-TFBGA	库存4,496	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	70ns	70ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS25WP064A-RMLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 64M SPI 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: 7ns Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.295", 7.50mm Width)	库存5,184	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	7ns	1.65 V ~ 1.95 V	-40°C ~ 105°C	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
MT53B384M64D4TP-062 XT ES:B	Micron Technology Inc.	IC DRAM 24G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,032	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1600MHz	-	-	1.1V	-	-	-	-
MTFC32GAPALBH-IT TR	Micron Technology Inc.	MODULE EMMC 32GB Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	封装: 153-TFBGA	库存6,304	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)
IS43QR16256B-083RBL	ISSI, Integrated Silicon Solution Inc	4G DDR4 256MX16 BGA(96) Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-BGA Supplier Device Package: 96-BGA	封装: 96-BGA	库存5,376	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.2GHz	15ns	-	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-BGA	96-BGA
W25Q32JVZPAQ	Winbond Electronics	IC FLASH 32MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封装: -	Request a Quote	FLASH	FLASH - NOR	32Mbit	SPI - Quad I/O	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
IS21ES32G-JQLI	ISSI, Integrated Silicon Solution Inc	IC FLASH 256GBIT EMMC 100LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 256Gbit Memory Interface: eMMC Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.3V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LFBGA (14x18)	封装: -	Request a Quote	FLASH	FLASH - NAND (MLC)	256Gbit	eMMC	200 MHz	-	-	2.7V ~ 3.3V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LFBGA (14x18)
NDS36PBA-20IT	Insignis Technology Corporation	SDR 256MB X16 BGA 8X8(X1.2) PC20 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 10ns Access Time: 4.5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-FBGA (8x8)	封装: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	200 MHz	10ns	4.5 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-FBGA (8x8)
S29GL01GP13FAIV20	Cypress Semiconductor Corp	IC FLASH 1GBIT PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 130ns Access Time: 130 ns Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	封装: -	Request a Quote	FLASH	FLASH - NOR	1Gbit	Parallel	-	130ns	130 ns	1.65V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
SFEM016GB1ED1TO-I-5E-311-STD	Swissbit	IC FLASH 128GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 128Gbit Memory Interface: eMMC Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封装: -	库存12	FLASH	FLASH - NAND (TLC)	128Gbit	eMMC	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
GD25LE32E3IGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 32MBIT SPI/QUAD 10WLCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 32Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 60µs, 2.4ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-XFBGA, WLCSP Supplier Device Package: 10-WLCSP	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	32Mbit	SPI - Quad I/O, QPI	133 MHz	60µs, 2.4ms	6 ns	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	10-XFBGA, WLCSP	10-WLCSP
MT53E8D1ATN-DC	Micron Technology Inc.	LPDDR4 16G 8DP Z32M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

EDF8164A3MA-JD-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,024

DRAM

SDRAM - Mobile LPDDR3

8Gb (128M x 64)

Parallel

933MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

MT29F32G08AECCBH1-10:C TR

Micron Technology Inc.

IC FLASH 32GBIT 100MHZ 100VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,624

FLASH

FLASH - NAND

32Gb (4G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

M25P40-VMC6GB

Micron Technology Inc.

IC FLASH 4MBIT 75MHZ 8UFDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Supplier Device Package: 8-UFDFPN (MLP8) (4x3)

封装: 8-UDFN

库存6,080

FLASH

FLASH - NOR

4Mb (512K x 8)

SPI

75MHz

15ms, 5ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN

8-UFDFPN (MLP8) (4x3)

MTFC16GLXDV-WT TR

Micron Technology Inc.

IC FLASH 128GBIT 169VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

封装: -

库存4,784

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

2.7 V ~ 3.6 V

-25°C ~ 85°C (TA)

Surface Mount

-

CY7C1480BV33-167AXC

Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存7,504

SRAM

SRAM - Synchronous

72Mb (2M x 36)

Parallel

167MHz

-

3.4ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

CY7C1415AV18-250BZC

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: 165-LBGA

库存4,400

SRAM

SRAM - Synchronous, QDR II

36Mb (1M x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

CY7C1356CV25-200AXC

Cypress Semiconductor Corp

IC SRAM 9MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.2ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存7,328

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

200MHz

-

3.2ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

CY7C1021B-15VXI

Cypress Semiconductor Corp

IC SRAM 1MBIT 15NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

封装: 44-BSOJ (0.400", 10.16mm Width)

库存5,024

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

15ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

CY7C1019CV33-12ZXCT

Cypress Semiconductor Corp

IC SRAM 1MBIT 12NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II

封装: 32-SOIC (0.400", 10.16mm Width)

库存3,328

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

32-SOIC (0.400", 10.16mm Width)

32-TSOP II

MT48LC8M16LFB4-8 IT:G TR

Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 125MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x8)

封装: 54-VFBGA

库存4,160

DRAM

SDRAM - Mobile LPSDR

128Mb (8M x 16)

Parallel

125MHz

15ns

7ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x8)

RC28F160C3BD70A

Micron Technology Inc.

IC FLASH 16MBIT 70NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - Boot Block
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

封装: 64-TBGA

库存10,764

FLASH

FLASH - Boot Block

16Mb (1M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-EasyBGA (10x13)

AT34C02-10PI-2.5

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存6,208

EEPROM

2Kb (256 x 8)

I2C

400kHz

10ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS61QDP2B24M18A-333M3L

ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 333MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUADP
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)

封装: 165-LBGA

库存2,208

SRAM

SRAM - Synchronous, QUADP

72Mb (4M x 18)

Parallel

333MHz

-

8.4ns

1.71 V ~ 1.89 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-LFBGA (15x17)

71V65803S100BGG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

库存7,456

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

EDW4032BABG-70-F-D

Micron Technology Inc.

IC SGRAM 4GBIT 1.75GHZ 170FBGA

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 1.75GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.31 V ~ 1.65 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 170-TFBGA
Supplier Device Package: 170-FBGA (12x14)

封装: 170-TFBGA

库存6,224

RAM

SGRAM - GDDR5

4Gb (128M x 32)

Parallel

1.75GHz

-

1.31 V ~ 1.65 V

0°C ~ 95°C (TC)

Surface Mount

170-TFBGA

170-FBGA (12x14)

24AA16HT-I/MS

Microchip Technology

IC EEPROM 16KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存5,904

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

CY7C1357C-133AXC

Cypress Semiconductor Corp

IC SRAM 9MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存4,688

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

S29PL127J70BAI003

Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 80FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Supplier Device Package: 80-FBGA (8x11)

封装: 80-VFBGA

库存4,848

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

80-VFBGA

80-FBGA (8x11)

IS66WV51216EALL-70BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封装: 48-TFBGA

库存4,496

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

70ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS25WP064A-RMLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 64M SPI 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: 7ns
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.295", 7.50mm Width)

库存5,184

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

7ns

1.65 V ~ 1.95 V

-40°C ~ 105°C

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

MT53B384M64D4TP-062 XT ES:B

Micron Technology Inc.

IC DRAM 24G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,032

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1600MHz

-

1.1V

-

MTFC32GAPALBH-IT TR

Micron Technology Inc.

MODULE EMMC 32GB

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

封装: 153-TFBGA

库存6,304

FLASH

FLASH - NAND

256Gb (32G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)

IS43QR16256B-083RBL

ISSI, Integrated Silicon Solution Inc

4G DDR4 256MX16 BGA(96)

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-BGA
Supplier Device Package: 96-BGA

封装: 96-BGA

库存5,376

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.2GHz

15ns

-

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-BGA

W25Q32JVZPAQ

Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封装: -

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FLASH

FLASH - NOR

32Mbit

SPI - Quad I/O

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

IS21ES32G-JQLI

ISSI, Integrated Silicon Solution Inc

IC FLASH 256GBIT EMMC 100LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 256Gbit
Memory Interface: eMMC
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.3V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LFBGA (14x18)

封装: -

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FLASH

FLASH - NAND (MLC)

256Gbit

eMMC

200 MHz

-

2.7V ~ 3.3V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LFBGA (14x18)

NDS36PBA-20IT

Insignis Technology Corporation

SDR 256MB X16 BGA 8X8(X1.2) PC20

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 10ns
Access Time: 4.5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-FBGA (8x8)

封装: -

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DRAM

SDRAM

256Mbit

LVTTL

200 MHz

10ns

4.5 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-FBGA (8x8)

S29GL01GP13FAIV20

Cypress Semiconductor Corp

IC FLASH 1GBIT PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 130ns
Access Time: 130 ns
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

封装: -

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FLASH

FLASH - NOR

1Gbit

Parallel

-

130ns

130 ns

1.65V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

SFEM016GB1ED1TO-I-5E-311-STD

Swissbit

IC FLASH 128GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 128Gbit
Memory Interface: eMMC
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封装: -

库存12

FLASH

FLASH - NAND (TLC)

128Gbit

eMMC

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

GD25LE32E3IGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 32MBIT SPI/QUAD 10WLCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 60µs, 2.4ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-XFBGA, WLCSP
Supplier Device Package: 10-WLCSP

封装: -

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FLASH

FLASH - NOR (SLC)

32Mbit

SPI - Quad I/O, QPI

133 MHz

60µs, 2.4ms

6 ns

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

10-XFBGA, WLCSP

10-WLCSP

MT53E8D1ATN-DC

Micron Technology Inc.

LPDDR4 16G 8DP Z32M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-