页 3 - Microsemi Corporation 产品 - 晶体管 - 双极 (BJT) - 射频

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DME500	Microsemi Corporation	TRANS RF BIPO 1700W 40A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6dB ~ 6.5dB Power - Max: 1700W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	封装: 55KT	库存5,776	55V	1.025GHz ~ 1.15GHz	-	6dB ~ 6.5dB	1700W	10 @ 500mA, 5V	40A	200°C (TJ)	Chassis Mount	55KT	55KT
MS2552	Microsemi Corporation	TRANS RF BIPO 880W 24A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.7dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: 2NLFL Supplier Device Package: 2NLFL	封装: 2NLFL	库存6,320	65V	1.025GHz ~ 1.15GHz	-	6.7dB	880W	15 @ 1A, 5V	24A	250°C (TJ)	Chassis Mount	2NLFL	2NLFL
DME375A	Microsemi Corporation	TRANS RF BIPO 875W 30A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封装: 55AW	库存3,776	55V	1.025GHz ~ 1.15GHz	-	6.5dB	875W	10 @ 300mA, 5V	30A	200°C (TJ)	Chassis Mount	55AW	55AW
MS2207	Microsemi Corporation	TRANS RF BIPO 24A 65V M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	封装: M216	库存6,352	65V	1.09GHz	-	8dB	880W	10 @ 5A, 5V	24A	250°C (TJ)	Chassis Mount	M216	M216
MSC1350M	Microsemi Corporation	TRANS RF BIPO 720W 19.8A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 7.1dB Power - Max: 720W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 19.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	封装: M218	库存6,816	65V	1.025GHz ~ 1.15GHz	-	7dB ~ 7.1dB	720W	15 @ 1A, 5V	19.8A	200°C (TJ)	Chassis Mount	M218	M218
MS2554	Microsemi Corporation	TRANS RF BIPO 600W 17.8A SO42 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	封装: M218	库存4,688	65V	1.025GHz ~ 1.15GHz	-	6.2dB	600W	15 @ 1A, 5V	17.8A	200°C (TJ)	Chassis Mount	M218	M218
UTV080	Microsemi Corporation	TRANS RF BIPO 65W 2.5A 55JV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 10dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Channel, DIN Rail Mount Package / Case: 55JV Supplier Device Package: 55JV	封装: 55JV	库存7,824	28V	470MHz ~ 860MHz	-	9dB ~ 10dB	65W	10 @ 500mA, 5V	2.5A	200°C (TJ)	Channel, DIN Rail Mount	55JV	55JV
1214-30	Microsemi Corporation	TRANS RF BIPO 88W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封装: 55AW	库存4,832	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
1517-20M	Microsemi Corporation	TRANS RF BIPO 175W 3A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.48GHz ~ 1.65GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB ~ 9.3dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55LV-1 Supplier Device Package: 55LV-1	封装: 55LV-1	库存3,232	65V	1.48GHz ~ 1.65GHz	-	7.6dB ~ 9.3dB	175W	20 @ 500mA, 5V	3A	-	Chassis Mount	55LV-1	55LV-1
2224-6L	Microsemi Corporation	TRANS RF BIPO 22W 1.25A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 22W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 1.25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	封装: 55LV	库存4,496	40V	2.2GHz ~ 2.4GHz	-	7dB	22W	20 @ 1A, 5V	1.25A	200°C (TJ)	Chassis Mount	55LV	55LV
UMIL80	Microsemi Corporation	TRANS RF BIPO 220W 12A 55HU-2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 200MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	封装: 55HV	库存6,672	31V	200MHz ~ 500MHz	-	9dB ~ 9.5dB	220W	10 @ 1A, 5V	12A	200°C (TJ)	Chassis Mount	55HV	55HV
MS2210	Microsemi Corporation	TRANS RF BIPO 940W 24A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 940W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	封装: M216	库存7,104	65V	960MHz ~ 1.215GHz	-	7dB	940W	10 @ 5A, 5V	24A	200°C (TJ)	Chassis Mount	M216	M216
MDS60L	Microsemi Corporation	TRANS RF BIPO 120W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 120W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封装: 55AW	库存3,808	65V	1.03GHz ~ 1.09GHz	-	10dB	120W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
JTDB75	Microsemi Corporation	TRANS RF BIPO 220W 8A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8.2dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封装: 55AW	库存5,760	55V	960MHz ~ 1.215GHz	-	7dB ~ 8.2dB	220W	20 @ 1A, 5V	8A	200°C (TJ)	Chassis Mount	55AW	55AW
2731-20	Microsemi Corporation	TRANS RF BIPO 70W 1.85 55KCR-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 3.1GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.85A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KCR-1 Supplier Device Package: 55KCR-1	封装: 55KCR-1	库存2,896	65V	2.7GHz ~ 3.1GHz	-	8.2dB	70W	-	1.85A	200°C (TJ)	Chassis Mount	55KCR-1	55KCR-1
MS2422	Microsemi Corporation	TRANS RF BIPO 875W 22A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	封装: M138	库存5,552	65V	960MHz ~ 1.215GHz	-	6.3dB	875W	10 @ 1A, 5V	22A	200°C (TJ)	Chassis Mount	M138	M138
MS2441	Microsemi Corporation	TRANS RF BIPO 1458W 22A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1458W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	封装: M112	库存4,896	65V	1.025GHz ~ 1.15GHz	-	6.5dB	1458W	5 @ 250mA, 5V	22A	200°C (TJ)	Chassis Mount	M112	M112
MSC1175M	Microsemi Corporation	TRANS RF BIPO 400W 12A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	封装: M218	库存2,992	65V	1.025GHz ~ 1.15GHz	-	8dB	400W	15 @ 1A, 5V	12A	250°C (TJ)	Chassis Mount	M218	M218
MS2209	Microsemi Corporation	TRANS RF BIPO 220W 7A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 225MHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	封装: M218	库存5,776	65V	225MHz	-	8.4dB	220W	20 @ 2A, 5V	7A	200°C (TJ)	Chassis Mount	M218	M218
TPR400	Microsemi Corporation	TRANS RF BIPO 875W 30A 55CX1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 7.27dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	封装: 55CX	库存5,552	55V	1.03GHz ~ 1.09GHz	-	7.27dB	875W	10 @ 2.5A, 5V	30A	200°C (TJ)	Chassis Mount	55CX	55CX
MPA201	Microsemi Corporation	TRANS RF BIPO 6W 300MA 55AU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AU Supplier Device Package: 55AU	封装: 55AU	库存6,480	22V	2GHz	-	13dB	6W	20 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	55AU	55AU
TAN150	Microsemi Corporation	TRANS RF BIPO 583W 15A 55AT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AT Supplier Device Package: 55AT	封装: 55AT	库存3,248	55V	960MHz ~ 1.215GHz	-	7dB	583W	10 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55AT	55AT
MDS140L	Microsemi Corporation	TRANS RF BIPO 500W 12A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 500W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封装: 55AW	库存4,064	70V	1.03GHz ~ 1.09GHz	-	9.5dB	500W	20 @ 1A, 5V	12A	200°C (TJ)	Chassis Mount	55AW	55AW
SD1536-08	Microsemi Corporation	TRANS RF BIPO 292W 10A M105 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 292W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	封装: M105	库存3,792	65V	1.025GHz ~ 1.15GHz	-	8.4dB	292W	5 @ 100mA, 5V	10A	200°C (TJ)	Chassis Mount	M105	M105
S200-50	Microsemi Corporation	TRANS RF BIPO 110V 30A 55HX Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 110V Frequency - Transition: 1.5MHz ~ 30MHz Noise Figure (dB Typ @ f): - Gain: 12dB ~ 14.5dB Power - Max: 320W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HX Supplier Device Package: 55HX	封装: 55HX	库存3,280	110V	1.5MHz ~ 30MHz	-	12dB ~ 14.5dB	320W	10 @ 1A, 5V	30A	150°C (TJ)	Chassis Mount	55HX	55HX
MDS150	Microsemi Corporation	TRANS RF BIPO 350W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封装: 55AW	库存3,888	60V	1.03GHz ~ 1.09GHz	-	10dB	350W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
23A008	Microsemi Corporation	TRANS RF BIPO 5W 400MA55BT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.7GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	封装: 55BT	库存7,104	22V	3.7GHz	-	8.5dB ~ 9.5dB	5W	20 @ 100mA, 5V	400mA	200°C (TJ)	Chassis Mount	55BT	55BT
1014-12	Microsemi Corporation	TRANS RF BIPO 39W 5A 55LT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 6.8dB Power - Max: 39W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LT Supplier Device Package: 55LT	封装: 55LT	库存7,008	50V	1GHz ~ 1.4GHz	-	6.8dB	39W	10 @ 200mA, 5V	5A	200°C (TJ)	Chassis Mount	55LT	55LT
MS1582	Microsemi Corporation	TRANS RF BIPO 135W 8A M173 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 135W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M173 Supplier Device Package: M173	封装: M173	库存7,360	30V	470MHz ~ 860MHz	-	9dB	135W	10 @ 3A, 5V	8A	200°C (TJ)	Chassis Mount	M173	M173
TAN75A	Microsemi Corporation	TRANS RF BIPO 290W 9A 55AZ1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AZ Supplier Device Package: 55AZ	封装: 55AZ	库存7,120	50V	960MHz ~ 1.215GHz	-	8dB ~ 8.5dB	290W	10 @ 15mA, 5V	9A	200°C (TJ)	Chassis Mount	55AZ	55AZ

DME500

Microsemi Corporation

TRANS RF BIPO 1700W 40A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB ~ 6.5dB
Power - Max: 1700W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

封装: 55KT

库存5,776

55V

1.025GHz ~ 1.15GHz

-

6dB ~ 6.5dB

1700W

10 @ 500mA, 5V

40A

200°C (TJ)

Chassis Mount

55KT

MS2552

Microsemi Corporation

TRANS RF BIPO 880W 24A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.7dB
Power - Max: 880W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2NLFL
Supplier Device Package: 2NLFL

封装: 2NLFL

库存6,320

65V

1.025GHz ~ 1.15GHz

-

6.7dB

880W

15 @ 1A, 5V

24A

250°C (TJ)

Chassis Mount

2NLFL

DME375A

Microsemi Corporation

TRANS RF BIPO 875W 30A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封装: 55AW

库存3,776

55V

1.025GHz ~ 1.15GHz

-

6.5dB

875W

10 @ 300mA, 5V

30A

200°C (TJ)

Chassis Mount

55AW

MS2207

Microsemi Corporation

TRANS RF BIPO 24A 65V M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 880W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

封装: M216

库存6,352

65V

1.09GHz

-

8dB

880W

10 @ 5A, 5V

24A

250°C (TJ)

Chassis Mount

M216

MSC1350M

Microsemi Corporation

TRANS RF BIPO 720W 19.8A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 7.1dB
Power - Max: 720W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 19.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

封装: M218

库存6,816

65V

1.025GHz ~ 1.15GHz

-

7dB ~ 7.1dB

720W

15 @ 1A, 5V

19.8A

200°C (TJ)

Chassis Mount

M218

MS2554

Microsemi Corporation

TRANS RF BIPO 600W 17.8A SO42

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 17.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

封装: M218

库存4,688

65V

1.025GHz ~ 1.15GHz

-

6.2dB

600W

15 @ 1A, 5V

17.8A

200°C (TJ)

Chassis Mount

M218

UTV080

Microsemi Corporation

TRANS RF BIPO 65W 2.5A 55JV2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 28V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 10dB
Power - Max: 65W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Channel, DIN Rail Mount
Package / Case: 55JV
Supplier Device Package: 55JV

封装: 55JV

库存7,824

28V

470MHz ~ 860MHz

-

9dB ~ 10dB

65W

10 @ 500mA, 5V

2.5A

200°C (TJ)

Channel, DIN Rail Mount

55JV

1214-30

Microsemi Corporation

TRANS RF BIPO 88W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 88W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封装: 55AW

库存4,832

50V

1.2GHz ~ 1.4GHz

-

7dB

88W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

1517-20M

Microsemi Corporation

TRANS RF BIPO 175W 3A 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.48GHz ~ 1.65GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB ~ 9.3dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 55LV-1
Supplier Device Package: 55LV-1

封装: 55LV-1

库存3,232

65V

1.48GHz ~ 1.65GHz

-

7.6dB ~ 9.3dB

175W

20 @ 500mA, 5V

3A

-

Chassis Mount

55LV-1

2224-6L

Microsemi Corporation

TRANS RF BIPO 22W 1.25A 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 2.2GHz ~ 2.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 22W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 1.25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV

封装: 55LV

库存4,496

40V

2.2GHz ~ 2.4GHz

-

7dB

22W

20 @ 1A, 5V

1.25A

200°C (TJ)

Chassis Mount

55LV

UMIL80

Microsemi Corporation

TRANS RF BIPO 220W 12A 55HU-2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 31V
Frequency - Transition: 200MHz ~ 500MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 9.5dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55HV
Supplier Device Package: 55HV

封装: 55HV

库存6,672

31V

200MHz ~ 500MHz

-

9dB ~ 9.5dB

220W

10 @ 1A, 5V

12A

200°C (TJ)

Chassis Mount

55HV

MS2210

Microsemi Corporation

TRANS RF BIPO 940W 24A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 940W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

封装: M216

库存7,104

65V

960MHz ~ 1.215GHz

-

7dB

940W

10 @ 5A, 5V

24A

200°C (TJ)

Chassis Mount

M216

MDS60L

Microsemi Corporation

TRANS RF BIPO 120W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 120W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封装: 55AW

库存3,808

65V

1.03GHz ~ 1.09GHz

-

10dB

120W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

JTDB75

Microsemi Corporation

TRANS RF BIPO 220W 8A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 8.2dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封装: 55AW

库存5,760

55V

960MHz ~ 1.215GHz

-

7dB ~ 8.2dB

220W

20 @ 1A, 5V

8A

200°C (TJ)

Chassis Mount

55AW

2731-20

Microsemi Corporation

TRANS RF BIPO 70W 1.85 55KCR-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.85A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KCR-1
Supplier Device Package: 55KCR-1

封装: 55KCR-1

库存2,896

65V

2.7GHz ~ 3.1GHz

-

8.2dB

70W

-

1.85A

200°C (TJ)

Chassis Mount

55KCR-1

MS2422

Microsemi Corporation

TRANS RF BIPO 875W 22A M138

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 6.3dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M138
Supplier Device Package: M138

封装: M138

库存5,552

65V

960MHz ~ 1.215GHz

-

6.3dB

875W

10 @ 1A, 5V

22A

200°C (TJ)

Chassis Mount

M138

MS2441

Microsemi Corporation

TRANS RF BIPO 1458W 22A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1458W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112

封装: M112

库存4,896

65V

1.025GHz ~ 1.15GHz

-

6.5dB

1458W

5 @ 250mA, 5V

22A

200°C (TJ)

Chassis Mount

M112

MSC1175M

Microsemi Corporation

TRANS RF BIPO 400W 12A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 400W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

封装: M218

库存2,992

65V

1.025GHz ~ 1.15GHz

-

8dB

400W

15 @ 1A, 5V

12A

250°C (TJ)

Chassis Mount

M218

MS2209

Microsemi Corporation

TRANS RF BIPO 220W 7A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 225MHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V
Current - Collector (Ic) (Max): 7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

封装: M218

库存5,776

65V

225MHz

-

8.4dB

220W

20 @ 2A, 5V

7A

200°C (TJ)

Chassis Mount

M218

TPR400

Microsemi Corporation

TRANS RF BIPO 875W 30A 55CX1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 7.27dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

封装: 55CX

库存5,552

55V

1.03GHz ~ 1.09GHz

-

7.27dB

875W

10 @ 2.5A, 5V

30A

200°C (TJ)

Chassis Mount

55CX

MPA201

Microsemi Corporation

TRANS RF BIPO 6W 300MA 55AU2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AU
Supplier Device Package: 55AU

封装: 55AU

库存6,480

22V

2GHz

-

13dB

6W

20 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

55AU

TAN150

Microsemi Corporation

TRANS RF BIPO 583W 15A 55AT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 583W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AT
Supplier Device Package: 55AT

封装: 55AT

库存3,248

55V

960MHz ~ 1.215GHz

-

7dB

583W

10 @ 1A, 5V

15A

200°C (TJ)

Chassis Mount

55AT

MDS140L

Microsemi Corporation

TRANS RF BIPO 500W 12A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 500W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封装: 55AW

库存4,064

70V

1.03GHz ~ 1.09GHz

-

9.5dB

500W

20 @ 1A, 5V

12A

200°C (TJ)

Chassis Mount

55AW

SD1536-08

Microsemi Corporation

TRANS RF BIPO 292W 10A M105

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 292W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M105
Supplier Device Package: M105

封装: M105

库存3,792

65V

1.025GHz ~ 1.15GHz

-

8.4dB

292W

5 @ 100mA, 5V

10A

200°C (TJ)

Chassis Mount

M105

S200-50

Microsemi Corporation

TRANS RF BIPO 110V 30A 55HX

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 110V
Frequency - Transition: 1.5MHz ~ 30MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB ~ 14.5dB
Power - Max: 320W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55HX
Supplier Device Package: 55HX

封装: 55HX

库存3,280

110V

1.5MHz ~ 30MHz

-

12dB ~ 14.5dB

320W

10 @ 1A, 5V

30A

150°C (TJ)

Chassis Mount

55HX

MDS150

Microsemi Corporation

TRANS RF BIPO 350W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封装: 55AW

库存3,888

60V

1.03GHz ~ 1.09GHz

-

10dB

350W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

23A008

Microsemi Corporation

TRANS RF BIPO 5W 400MA55BT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 3.7GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 9.5dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

封装: 55BT

库存7,104

22V

3.7GHz

-

8.5dB ~ 9.5dB

5W

20 @ 100mA, 5V

400mA

200°C (TJ)

Chassis Mount

55BT

1014-12

Microsemi Corporation

TRANS RF BIPO 39W 5A 55LT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 6.8dB
Power - Max: 39W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LT
Supplier Device Package: 55LT

封装: 55LT

库存7,008

50V

1GHz ~ 1.4GHz

-

6.8dB

39W

10 @ 200mA, 5V

5A

200°C (TJ)

Chassis Mount

55LT

MS1582

Microsemi Corporation

TRANS RF BIPO 135W 8A M173

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 135W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M173
Supplier Device Package: M173

封装: M173

库存7,360

30V

470MHz ~ 860MHz

-

9dB

135W

10 @ 3A, 5V

8A

200°C (TJ)

Chassis Mount

M173

TAN75A

Microsemi Corporation

TRANS RF BIPO 290W 9A 55AZ1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.5dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V
Current - Collector (Ic) (Max): 9A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AZ
Supplier Device Package: 55AZ

封装: 55AZ

库存7,120

50V

960MHz ~ 1.215GHz

-

8dB ~ 8.5dB

290W

10 @ 15mA, 5V

9A

200°C (TJ)

Chassis Mount

55AZ