Microsemi Corporation 产品

APTM20DHM16T3G

Microsemi Corporation

MOSFET 2N-CH 200V 104A SP3

• FET Type: 2 N-Channel (Dual) Asymmetrical
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 104A
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
• Power - Max: 390W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

封装: SP3

2N4033UA

Microsemi Corporation

TRANS PNP 80V 1A

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 500mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Supplier Device Package: UA

封装: 4-SMD, No Lead

MDS1100

Microsemi Corporation

TRANS RF BIPO 8750W 100A 55TU1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.03GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8.9dB
• Power - Max: 8750W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
• Current - Collector (Ic) (Max): 100A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 55TU-1
• Supplier Device Package: 55TU-1

封装: 55TU-1

JANTX2N2328AS

Microsemi Corporation

DIODE SILICON CTRL TO39

• Voltage - Off State: 300V
• Voltage - Gate Trigger (Vgt) (Max): 600mV
• Current - Gate Trigger (Igt) (Max): 20µA
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): 220mA
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): 2mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: Sensitive Gate
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)

封装: TO-205AD, TO-39-3 Metal Can

1N5948C G

Microsemi Corporation

DIODE ZENER 91V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±2%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 69.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1N5255A (DO-35)

Microsemi Corporation

DIODE ZENER 28V 500MW DO35

• Voltage - Zener (Nom) (Vz): 28V
• Tolerance: ±10%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 44 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

JAN1N4486US

Microsemi Corporation

DIODE ZENER 75V 1.5W D-5A

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 130 Ohms
• Current - Reverse Leakage @ Vr: 250nA @ 60V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A

封装: SQ-MELF, A

1N6006C

Microsemi Corporation

DIODE ZENER 18V 500MW DO35

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 42 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

3EZ100D2E3/TR8

Microsemi Corporation

DIODE ZENER 100V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 160 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

3EZ7.5D5/TR12

Microsemi Corporation

DIODE ZENER 7.5V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1N4756PE3/TR8

Microsemi Corporation

DIODE ZENER 47V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

JANTXV1N3912

Microsemi Corporation

DIODE GEN PURP 300V 50A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 50A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 15µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AB, DO-5, Stud

LE79124KVC

Microsemi Corporation

IC VOICE LINE VCPNG 72CH 128TQFP

• Function: -
• Interface: 2-Wire
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 128-TQFP
• Supplier Device Package: 128-TQFP

封装: 128-TQFP

MT8966AS1

Microsemi Corporation

IC CODEC U-LAW CCITT PCM 20SOIC

• Function: PCM CODEC
• Interface: PCM
• Number of Circuits: 1
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: 3mA
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

封装: 20-SOIC (0.295", 7.50mm Width)

M2S060-1FCSG325

Microsemi Corporation

IC FPGA SOC 60K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 60K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 325-TFBGA
• Supplier Device Package: 325-BGA (11x11)

封装: 325-TFBGA

AGLN060V2-CSG81

Microsemi Corporation

IC FPGA 60 I/O 81CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 1536
• Total RAM Bits: 18432
• Number of I/O: 60
• Number of Gates: 60000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -20°C ~ 85°C (TJ)
• Package / Case: 81-WFBGA, CSBGA
• Supplier Device Package: 81-CSP (5x5)

封装: 81-WFBGA, CSBGA

A3PN030-Z1VQ100

Microsemi Corporation

IC FPGA 77 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 77
• Number of Gates: 30000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -20°C ~ 85°C (TJ)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

封装: 100-TQFP

A54SX08-1PQ208

Microsemi Corporation

IC FPGA 130 I/O 208QFP

• Number of LABs/CLBs: 768
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 130
• Number of Gates: 12000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

封装: 208-BFQFP

AFS250-FGG256

Microsemi Corporation

IC FPGA 114 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 114
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

封装: 256-LBGA

A3PE3000-2FG484I

Microsemi Corporation

IC FPGA 341 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 516096
• Number of I/O: 341
• Number of Gates: 3000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封装: 484-BGA

JAN1N6131

Microsemi Corporation

TVS DIODE 86.6VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 86.6V
• Voltage - Breakdown (Min): 99.28V
• Voltage - Clamping (Max) @ Ipp: 158.87V
• Current - Peak Pulse (10/1000µs): 3.14A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

封装: B, Axial

MXLSMBJSAC8.5E3

Microsemi Corporation

TVS DIODE 8.5VWM 14VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.5V
• Voltage - Breakdown (Min): 9.44V
• Voltage - Clamping (Max) @ Ipp: 14V
• Current - Peak Pulse (10/1000µs): 34A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 30pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

MXPLAD36KP90CAE3

Microsemi Corporation

TVS DIODE 146VC 247A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 90V
• Voltage - Breakdown (Min): 100V
• Voltage - Clamping (Max) @ Ipp: 146V
• Current - Peak Pulse (10/1000µs): 247A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MXLPLAD30KP43CA

Microsemi Corporation

TVS DIODE 43VWM 69.4VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 432A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MAPLAD18KP51AE3

Microsemi Corporation

TVS DIODE 82.4VC 219A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 219A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MXSMCJ28A

Microsemi Corporation

TVS DIODE 28VWM 45.4VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 45.4V
• Current - Peak Pulse (10/1000µs): 33A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

15KPA36AE3/TR13

Microsemi Corporation

TVS DIODE 36VWM 59.8VC R6

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40.2V
• Voltage - Clamping (Max) @ Ipp: 59.8V
• Current - Peak Pulse (10/1000µs): 252.5A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

封装: P600, Axial

MSMLJ17AE3

Microsemi Corporation

TVS DIODE 17VWM 27.6VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 27.6V
• Current - Peak Pulse (10/1000µs): 106.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封装: DO-214AB, SMC