Microsemi Corporation 产品

APTGLQ300H65G

Microsemi Corporation

PWR MOD IGBT4 650V 600A SP6

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 600A
• Power - Max: 1000W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
• Current - Collector Cutoff (Max): 300µA
• Input Capacitance (Cies) @ Vce: 18.3nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SP6
• Supplier Device Package: SP6

封装: SP6

APTM120SK68T1G

Microsemi Corporation

MOSFET N-CH 1200V 15A SP1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 15A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 357W (Tc)
• Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP1
• Package / Case: SP1

封装: SP1

JANTX2N3879

Microsemi Corporation

TRANS NPN 75V 7A TO-66

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 7A
• Voltage - Collector Emitter Breakdown (Max): 75V
• Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
• Current - Collector Cutoff (Max): 25mA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
• Power - Max: 35W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-213AA, TO-66-2
• Supplier Device Package: -

封装: TO-213AA, TO-66-2

1N2982A

Microsemi Corporation

DIODE ZENER 18V 10W DO213AA

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 10W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-213AA

封装: DO-203AA, DO-4, Stud

JANTX1N4988US

Microsemi Corporation

DIODE ZENER 180V 5W D5B

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B

封装: E-MELF

JAN1N4971DUS

Microsemi Corporation

DIODE ZENER 36V 5W D5B

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±1%
• Power - Max: 5W
• Impedance (Max) (Zzt): 11 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 27.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

封装: SQ-MELF, E

1N5279B

Microsemi Corporation

DIODE ZENER 180V 500MW DO35

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 2200 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 137V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

1N5377CE3/TR8

Microsemi Corporation

DIODE ZENER 91V 5W T18

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 65.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

1N6010B

Microsemi Corporation

DIODE ZENER 27V 500MW DO35

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

HS123100

Microsemi Corporation

DIODE MODULE 100V 120A HALF-PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 120A
• Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 100V
• Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
• Mounting Type: Chassis Mount
• Package / Case: HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

封装: HALF-PAK

MBR40200PTE3/TU

Microsemi Corporation

DIODE SCHOTTKY 40A 200V TO-247AD

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

A54SX08A-1TQ144

Microsemi Corporation

IC FPGA 113 I/O 144TQFP

• Number of LABs/CLBs: 768
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 113
• Number of Gates: 12000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

封装: 144-LQFP

A3P600-FG256

Microsemi Corporation

IC FPGA 177 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 110592
• Number of I/O: 177
• Number of Gates: 600000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

封装: 256-LBGA

EX128-FTQ64

Microsemi Corporation

IC FPGA 46 I/O 64TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 256
• Total RAM Bits: -
• Number of I/O: 46
• Number of Gates: 6000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: 64-LQFP

M1.5KE47CAE3

Microsemi Corporation

TVS DIODE 40.2VWM 64.8VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 40.2V
• Voltage - Breakdown (Min): 44.7V
• Voltage - Clamping (Max) @ Ipp: 64.8V
• Current - Peak Pulse (10/1000µs): 23.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

SM16LC15CE3/TR13

Microsemi Corporation

TVS DIODE 15VWM 30VC SO16

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 8
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 30V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 25pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

封装: 16-SOIC (0.154", 3.90mm Width)

MXPLAD30KP18CA

Microsemi Corporation

TVS DIODE 18VWM 30.8VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 18V
• Voltage - Breakdown (Min): 20V
• Voltage - Clamping (Max) @ Ipp: 30.8V
• Current - Peak Pulse (10/1000µs): 975A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MXL15KP280CAE3

Microsemi Corporation

TVS DIODE 280VWM 452VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 280V
• Voltage - Breakdown (Min): 311V
• Voltage - Clamping (Max) @ Ipp: 452V
• Current - Peak Pulse (10/1000µs): 33A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

封装: DO-204AR, Axial

MXSMBG150CA

Microsemi Corporation

TVS DIODE 150VWM 243VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 2.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封装: DO-215AA, SMB Gull Wing

1N6360

Microsemi Corporation

TVS DIODE 15VWM 20.6VC DO13

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 17.6V
• Voltage - Clamping (Max) @ Ipp: 20.6V
• Current - Peak Pulse (10/1000µs): 60A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

封装: DO-13

MXLSMLJ51A

Microsemi Corporation

TVS DIODE 51VWM 82.4VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 36.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封装: DO-214AB, SMC

MXLP6KE100AE3

Microsemi Corporation

TVS DIODE 85.5VWM 137VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85.5V
• Voltage - Breakdown (Min): 95V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 4.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

MASMCJ20CA

Microsemi Corporation

TVS DIODE 20VWM 32.4VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 20V
• Voltage - Breakdown (Min): 22.2V
• Voltage - Clamping (Max) @ Ipp: 32.4V
• Current - Peak Pulse (10/1000µs): 46.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

MASMBG10CAE3

Microsemi Corporation

TVS DIODE 10VWM 17VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 35.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封装: DO-215AA, SMB Gull Wing

MSMLJ13AE3

Microsemi Corporation

TVS DIODE 13VWM 21.5VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 139.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封装: DO-214AB, SMC

SMLJ7.5AE3/TR13

Microsemi Corporation

TVS DIODE 7.5VWM 12.9VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 232.6A
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封装: DO-214AB, SMC

1N6466

Microsemi Corporation

TVS DIODE 30.5VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30.5V
• Voltage - Breakdown (Min): 33V
• Voltage - Clamping (Max) @ Ipp: 47.5V
• Current - Peak Pulse (10/1000µs): 63A (8/20µs)
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

封装: B, Axial

1N4890

Microsemi Corporation

DIODE ZENER

• Voltage - Zener (Nom) (Vz): 6.35 V
• Tolerance: ±5%
• Power - Max: 400 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

封装: -

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