Microsemi Corporation 产品

APTGT100DA60T1G

Microsemi Corporation

IGBT BOOST CHOP 600V 150A SP1

• IGBT Type: Trench Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 150A
• Power - Max: 340W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 6.1nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Supplier Device Package: SP1

封装: SP1

JANTXV2N6385

Microsemi Corporation

TRANS NPN DARL 80V 10A TO3

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
• Current - Collector Cutoff (Max): 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
• Power - Max: 6W
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204AA (TO-3)

封装: TO-204AA, TO-3

JAN2N4029

Microsemi Corporation

TRANS PNP 80V 1A

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 500mW
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18 (TO-206AA)

封装: TO-206AA, TO-18-3 Metal Can

MRF559T

Microsemi Corporation

COMM/BIPOLAR TRANSISTOR

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.5dB
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Current - Collector (Ic) (Max): 150mA
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

NSR356

Microsemi Corporation

DIODE SILICON CTRL

• Voltage - Off State: -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

SMBJ5950A/TR13

Microsemi Corporation

DIODE ZENER 110V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 83.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

1N4558A

Microsemi Corporation

DIODE ZENER 4.3V 50W TO204AD

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±10%
• Power - Max: 50W
• Impedance (Max) (Zzt): 0.16 Ohms
• Current - Reverse Leakage @ Vr: 150µA @ 500mV
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-204AD
• Supplier Device Package: TO-204AD (TO-3)

封装: TO-204AD

JANTX1N3042DUR-1

Microsemi Corporation

DIODE ZENER 82V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±1%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

封装: DO-213AB, MELF (Glass)

JAN1N4622CUR-1

Microsemi Corporation

DIODE ZENER 3.9V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1650 Ohms
• Current - Reverse Leakage @ Vr: 2.5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封装: DO-213AA

CDLL4746A

Microsemi Corporation

DIODE ZENER 18V DO213AB

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: -
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封装: DO-213AB, MELF

1N5748B

Microsemi Corporation

DIODE ZENER 33V 500MW DO35

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

JANTX1N3766R

Microsemi Corporation

DIODE GEN PURP 800V 35A DO203AB

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 2.3V @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AB, DO-5, Stud

1N5184

Microsemi Corporation

DIODE GEN 10KV 100MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 10000V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 10V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 10000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: S, Axial
• Supplier Device Package: S, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

封装: S, Axial

UPS1040/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 10A POWERMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 490mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 35V
• Capacitance @ Vr, F: 700pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-216AA

LX1665ACDW

Microsemi Corporation

IC PWM DUAL OUT 5BIT DAC 18SOIC

• Applications: Controller, Intel Pentium? II
• Voltage - Input: 10.8 V ~ 13.2 V
• Number of Outputs: 2
• Voltage - Output: 1.8 V ~ 2.8 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 18-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 18-SOIC

封装: 18-SOIC (0.295", 7.50mm Width)

M7AFS600-PQ208I

Microsemi Corporation

IC FPGA 95 I/O 208QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 110592
• Number of I/O: 95
• Number of Gates: 600000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

封装: 208-BFQFP

M1A3P400-2FGG484I

Microsemi Corporation

IC FPGA 194 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 55296
• Number of I/O: 194
• Number of Gates: 400000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封装: 484-BGA

MPF500TS-1FCG1152I

Microsemi Corporation

IC FPGA 584 I/O

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 481000
• Total RAM Bits: 33792000
• Number of I/O: 584
• Number of Gates: -
• Voltage - Supply: 0.97 V ~ 1.08 V
• Mounting Type: -
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: -
• Supplier Device Package: -

封装: -

A40MX02-FVQ80

Microsemi Corporation

IC FPGA 57 I/O 80VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 57
• Number of Gates: 3000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 80-TQFP
• Supplier Device Package: 80-VQFP (14x14)

封装: 80-TQFP

A3P060-1FG144T

Microsemi Corporation

IC FPGA 96 I/O 144FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 18432
• Number of I/O: 96
• Number of Gates: 60000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

封装: 144-LBGA

M2GL005S-1VF400

Microsemi Corporation

IC FPGA 169 I/O 400VFBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 6060
• Total RAM Bits: 719872
• Number of I/O: 169
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 400-LFBGA
• Supplier Device Package: 400-VFBGA (17x17)

封装: 400-LFBGA

AGL125V2-CSG196I

Microsemi Corporation

IC FPGA 133 I/O 196CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 3072
• Total RAM Bits: 36864
• Number of I/O: 133
• Number of Gates: 125000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 196-TFBGA, CSBGA
• Supplier Device Package: 196-CSP (8x8)

封装: 196-TFBGA, CSBGA

MSMCGLCE9.0A

Microsemi Corporation

TVS DIODE 9VWM 15.4VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 15.4V
• Current - Peak Pulse (10/1000µs): 97A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

封装: DO-215AB, SMC Gull Wing

MP5KE7.0CA

Microsemi Corporation

TVS DIODE 7VWM 12VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 41.7A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

MAPLAD36KP20CAE3

Microsemi Corporation

TVS DIODE 34VC 1059A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 20V
• Voltage - Breakdown (Min): 22.2V
• Voltage - Clamping (Max) @ Ipp: 34V
• Current - Peak Pulse (10/1000µs): 1059A (1.059kA)
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MX15KP150CAE3

Microsemi Corporation

TVS DIODE 150VWM 243VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 62A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

封装: DO-204AR, Axial

MXSMBJ30A

Microsemi Corporation

TVS DIODE 30VWM 48.4VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30V
• Voltage - Breakdown (Min): 33.3V
• Voltage - Clamping (Max) @ Ipp: 48.4V
• Current - Peak Pulse (10/1000µs): 12.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

JAN1N6135AUS

Microsemi Corporation

TVS DIODE 121.6VWM SQMELF

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 121.6V
• Voltage - Breakdown (Min): 152V
• Voltage - Clamping (Max) @ Ipp: 218.4V
• Current - Peak Pulse (10/1000µs): 2.3A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

封装: SQ-MELF, B