Renesas Electronics America 产品 - 晶体管 - FET，MOSFET - 单

RJK6026DPE-00#J3

Renesas Electronics America

MOSFET N-CH 600V 5A LDPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-LDPAK
• Package / Case: SC-83

封装: SC-83

RJK6020DPK-00#T0

Renesas Electronics America

MOSFET N-CH 600V 32A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 175 mOhm @ 16A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

RJK6018DPM-00#T1

Renesas Electronics America

MOSFET N-CH 600V 30A TO3PFM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PFM
• Package / Case: TO-3PFM, SC-93-3

封装: TO-3PFM, SC-93-3

RJK6018DPK-00#T0

Renesas Electronics America

MOSFET N-CH 600V 30A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

RJK6015DPM-00#T1

Renesas Electronics America

MOSFET N-CH 600V 21A TO3PFM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 10.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PFM
• Package / Case: TO-3PFM, SC-93-3

封装: TO-3PFM, SC-93-3

RJK6015DPK-00#T0

Renesas Electronics America

MOSFET N-CH 600V 21A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 10.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

RJK6014DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 600V 16A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 575 mOhm @ 8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK6013DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 600V 11A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 5.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK6013DPE-00#J3

Renesas Electronics America

MOSFET N-CH 600V 11A LDPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 5.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-LDPAK
• Package / Case: SC-83

封装: SC-83

RJK6012DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 600V 10A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 920 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK6011DJE-00#Z0

Renesas Electronics America

MOSFET N-CH 600V 0.1A TO92

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 900mW (Ta)
• Rds On (Max) @ Id, Vgs: 52 Ohm @ 50mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92MOD
• Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)

封装: TO-226-3, TO-92-3 Long Body (Formed Leads)

RJK6006DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 600V 5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 29W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK6006DPD-00#J2

Renesas Electronics America

MOSFET N-CH 600V 5A MP3A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 77.6W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MP-3A
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

RJK6002DPD-00#J2

Renesas Electronics America

MOSFET N-CH 600V 2A MP3A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 6.8 Ohm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MP-3A
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

RJK5035DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 500V 10A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 29.5W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK5034DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 500V 1.2A TO220

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK5031DPD-00#J2

Renesas Electronics America

MOSFET N-CH 500V 3A MP3A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40.3W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 1.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MP-3A
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

RJK5030DPD-00#J2

Renesas Electronics America

MOSFET N-CH 500V 5A MP3A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 41.7W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MP-3A
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

RJK5026DPP-M0#T2

Renesas Electronics America

MOSFET N-CH 500V 6A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 28.5W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FL
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK5026DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 500V 6A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 28.5W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK5020DPK-00#T0

Renesas Electronics America

MOSFET N-CH 500V 40A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 118 mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

RJK5018DPK-00#T0

Renesas Electronics America

MOSFET N-CH 500V 35A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 155 mOhm @ 17.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

RJK5014DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 500V 19A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 390 mOhm @ 9.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK5013DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 500V 14A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 465 mOhm @ 7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK5013DPE-00#J3

Renesas Electronics America

MOSFET N-CH 500V 14A LDPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 465 mOhm @ 7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-LDPAK
• Package / Case: SC-83

封装: SC-83

RJK5012DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 500V 12A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

RJK5012DPE-00#J3

Renesas Electronics America

MOSFET N-CH 500V 12A LDPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-LDPAK
• Package / Case: SC-83

封装: SC-83

RJK4518DPK-00#T0

Renesas Electronics America

MOSFET N-CH 450V 39A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 19.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3