Rohm Semiconductor 产品

RQ1E100XNTR

Rohm Semiconductor

MOSFET N-CH 30V 10A TSMT8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 550mW (Ta)
• Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT8
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

2SD1664T100R

Rohm Semiconductor

TRANS NPN 32V 1A SOT-89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 32V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: MPT3

封装: TO-243AA

2SD1949T106Q

Rohm Semiconductor

TRANS NPN 50V 0.5A SOT-323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
• Power - Max: 200mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

封装: SC-70, SOT-323

DTD114GCT116

Rohm Semiconductor

NPN 500MA/50V DIGITAL TRANSISTOR

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): -
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SST3

封装: TO-236-3, SC-59, SOT-23-3

RBR1L30ATE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDS

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C (Max)

封装: DO-214AC, SMA

BU4347F-TR

Rohm Semiconductor

IC DETECTOR VOLT 4.7V CMOS 4SOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 4.7V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-82
• Supplier Device Package: 4-SOP

封装: SC-82

BU4933FVE-TR

Rohm Semiconductor

IC VOLT DETECTOR STD 5-VSOF

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High/Active Low
• Reset Timeout: -
• Voltage - Threshold: 3.3V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: 5-VSOF

封装: SOT-665

BR93L86RFV-WE2

Rohm Semiconductor

IC EEPROM 16KBIT 2MHZ 8SSOPB

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (1K x 16)
• Memory Interface: SPI
• Clock Frequency: 2MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-SSOPB

封装: 8-LSSOP (0.173", 4.40mm Width)

BR24G512-3A

Rohm Semiconductor

IC EEPROM 512KBIT 1MHZ 8DIP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 512Kb (64K x 8)
• Memory Interface: I2C
• Clock Frequency: 1MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP-T

封装: 8-DIP (0.300", 7.62mm)

MCR18EZHF1743

Rohm Semiconductor

RES SMD 174K OHM 1% 1/4W 1206

• Resistance: 174 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR10EZHF2672

Rohm Semiconductor

RES SMD 26.7K OHM 1% 1/8W 0805

• Resistance: 26.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR25JZPF6R80

Rohm Semiconductor

RES SMD 6.8 OHM 1% 1/2W 1210

• Resistance: 6.8 Ohms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1210 (3225 Metric)

KTR10EZPF1132

Rohm Semiconductor

RES SMD 11.3K OHM 1% 1/8W 0805

• Resistance: 11.3 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR10EZPF27R4

Rohm Semiconductor

RES SMD 27.4 OHM 1% 0.4W 0805

• Resistance: 27.4 Ohms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR10EZPF1474

Rohm Semiconductor

RES SMD 1.47M OHM 1% 0.4W 0805

• Resistance: 1.47 MOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR18EZPF9313

Rohm Semiconductor

RES SMD 931K OHM 1% 1/3W 1206

• Resistance: 931 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

KTR10EZPJ165

Rohm Semiconductor

RES SMD 1.6M OHM 5% 1/8W 0805

• Resistance: 1.6 MOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR18ERTF1051

Rohm Semiconductor

RES SMD 1.05K OHM 1% 1/4W 1206

• Resistance: 1.05 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR03ERTJ304

Rohm Semiconductor

RES SMD 300K OHM 5% 1/10W 0603

• Resistance: 300 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR18ERTJ753

Rohm Semiconductor

RES SMD 75K OHM 5% 1/4W 1206

• Resistance: 75 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR50JZHFLR200

Rohm Semiconductor

RES SMD 0.2 OHM 1% 1/2W 2010

• Resistance: 200 mOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2010 (5025 Metric)

MCR03ERTF3831

Rohm Semiconductor

RES SMD 3.83K OHM 1% 1/10W 0603

• Resistance: 3.83 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR100JZHJ133

Rohm Semiconductor

RES SMD 13K OHM 5% 1W 2512

• Resistance: 13 kOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2512 (6432 Metric)

MCR18ERTF1500

Rohm Semiconductor

RES SMD 150 OHM 1% 1/4W 1206

• Resistance: 150 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

BR24A32F-WLBH2

Rohm Semiconductor

I2C BUS 32KBIT(4096X8BIT) EEPROM

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 32Kb (4K x 8)
• Memory Interface: I²C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

封装: 8-SOIC (0.173", 4.40mm Width)

SCT2450KEHRC11

Rohm Semiconductor

1200V, 10A, THD, SILICON-CARBIDE

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 4V @ 900µA
• Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
• Vgs (Max): +22V, -6V
• FET Feature: -
• Power Dissipation (Max): 85W (Tc)
• Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247N
• Package / Case: TO-247-3

封装: -

BD49E28G-MTR

Rohm Semiconductor

IC SUPERVISOR 1 CHANNEL 5SSOP

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 2.8V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

封装: -

RQ3E180AJTB1

Rohm Semiconductor

NCH 30V 18A MIDDLE POWER MOSFET:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 11mA
• Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSMT (3.2x3)
• Package / Case: 8-PowerVDFN

封装: -

BAS40HYT116

Rohm Semiconductor

DIODE SCHOTTKY 40V 120MA SOT23

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 120mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Operating Temperature - Junction: 150°C

封装: -

BU9795BKV-E2

Rohm Semiconductor

LOW DUTY LCD SEGMENT DRIVERS: BU

• Display Type: LCD
• Configuration: 124 Segment
• Interface: SPI
• Digits or Characters: -
• Current - Supply: 20 µA
• Voltage - Supply: 2.5V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-VQFPC (7x7)

封装: -