Rohm Semiconductor 产品

MCH038CN103KK

Rohm Semiconductor

CAP CER 10000PF 6.3V X7R 0201

• Capacitance: 10000pF
• Tolerance: ±10%
• Voltage - Rated: 6.3V
• Temperature Coefficient: X7R
• Operating Temperature: -55°C ~ 125°C
• Features: -
• Ratings: -
• Applications: General Purpose
• Failure Rate: -
• Mounting Type: Surface Mount, MLCC
• Package / Case: 0201 (0603 Metric)
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): -
• Thickness (Max): 0.012" (0.30mm)
• Lead Spacing: -
• Lead Style: -

封装: 0201 (0603 Metric)

RE1J002YNTCL

Rohm Semiconductor

MOSFET N-CH 1.2V DRIVE EMT3FM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: EMT3F (SOT-416FL)
• Package / Case: SC-89, SOT-490

封装: SC-89, SOT-490

RSJ800N06TL

Rohm Semiconductor

MOSFET N-CH 60V 80A LPTS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: LPTS
• Package / Case: SC-83

封装: SC-83

RCD080N25TL

Rohm Semiconductor

MOSFET N-CH 250V 8A SOT-428

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 850mW (Ta), 20W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CPT3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

DTA113ZSATP

Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Through Hole
• Package / Case: SC-72 Formed Leads
• Supplier Device Package: SPT

封装: SC-72 Formed Leads

RLZTE-1139C

Rohm Semiconductor

DIODE ZENER 36.3V 500MW LLDS

• Voltage - Zener (Nom) (Vz): 36.3V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: LLDS

封装: DO-213AC, MINI-MELF, SOD-80

RR264M-400TR

Rohm Semiconductor

DIODE GEN PURP 400V 700MA PMDU

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU
• Operating Temperature - Junction: 150°C (Max)

封装: SOD-123F

RB450FT106

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 10V
• Capacitance @ Vr, F: 6pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMD3
• Operating Temperature - Junction: 125°C (Max)

封装: SC-70, SOT-323

RB521G-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA VMD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 10V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: VMD2
• Operating Temperature - Junction: 125°C (Max)

封装: 2-SMD, Flat Lead

BD45475G-TR

Rohm Semiconductor

IC RESET OD 4.7V 50MS 5SSOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 45 ms Minimum
• Voltage - Threshold: 4.7V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

封装: SC-74A, SOT-753

BR24G04-3

Rohm Semiconductor

IC EEPROM 4KBIT 400KHZ 8DIP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (512 x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP-T

封装: 8-DIP (0.300", 7.62mm)

BU7245HFV-TR

Rohm Semiconductor

IC OPAMP GP 70KHZ RRO 5-HVSOF

• Amplifier Type: General Purpose
• Number of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 0.035 V/µs
• Gain Bandwidth Product: 70kHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 1mV
• Current - Supply: 5µA
• Current - Output / Channel: 8mA
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 5.5 V, ±0.9 V ~ 2.75 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: HVSOF5

封装: SOT-665

MCR10ERTF11R8

Rohm Semiconductor

RES SMD 11.8 OHM 1% 1/8W 0805

• Resistance: 11.8 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR006YRTJ911

Rohm Semiconductor

RES SMD 910 OHM 5% 1/20W 0201

• Resistance: 910 Ohms
• Tolerance: ±5%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0201 (0603 Metric)

MCR006YRTF4422

Rohm Semiconductor

RES SMD 44.2K OHM 1% 1/20W 0201

• Resistance: 44.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0201 (0603 Metric)

MCR18EZHJLR33

Rohm Semiconductor

RES SMD 0.33 OHM 5% 1/4W 1206

• Resistance: 330 mOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18EZPF1872

Rohm Semiconductor

RES SMD 18.7K OHM 1% 1/4W 1206

• Resistance: 18.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18EZHJ913

Rohm Semiconductor

RES SMD 91K OHM 5% 1/4W 1206

• Resistance: 91 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18EZHF5103

Rohm Semiconductor

RES SMD 510K OHM 1% 1/4W 1206

• Resistance: 510 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR10ERTFL4R70

Rohm Semiconductor

RES SMD 4.7 OHM 1% 1/8W 0805

• Resistance: 4.7 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

KTR18EZPF9762

Rohm Semiconductor

RES SMD 97.6K OHM 1% 1/4W 1206

• Resistance: 97.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

ESR18EZPF33R0

Rohm Semiconductor

RES SMD 33 OHM 1% 1/3W 1206

• Resistance: 33 Ohms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR03ERTF5363

Rohm Semiconductor

RES SMD 536K OHM 1% 1/10W 0603

• Resistance: 536 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR50JZHJ753

Rohm Semiconductor

RES SMD 75K OHM 5% 1/2W 2010

• Resistance: 75 kOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2010 (5025 Metric)

RUP1301UMTL

Rohm Semiconductor

DIODE STANDARD UMT

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

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UDZVFHTE-1743

Rohm Semiconductor

DIODE ZENER 43V 200MW UMD2

• Voltage - Zener (Nom) (Vz): 43 V
• Tolerance: ±5.81%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 550 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 33 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: UMD2

封装: -

RB068VWM150TR

Rohm Semiconductor

DIODE SCHOTTKY 150V 2A PMDE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: PMDE
• Operating Temperature - Junction: 175°C

封装: -

PDZVTR9-1A

Rohm Semiconductor

DIODE ZENER 9.05V 1W PMDTM

• Voltage - Zener (Nom) (Vz): 9.05 V
• Tolerance: ±6.08%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 20 µA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM

封装: -