Rohm Semiconductor 产品

RSD200N05TL

Rohm Semiconductor

MOSFET N-CH 45V 20A CPT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CPT3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

2SC4115STPS

Rohm Semiconductor

TRANS NPN 20V 2A 3-PIN SPT

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
• Power - Max: 400mW
• Frequency - Transition: 290MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-72 Formed Leads
• Supplier Device Package: SPT

封装: SC-72 Formed Leads

DTD123TSTP

Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 300mW
• Mounting Type: Through Hole
• Package / Case: SC-72 Formed Leads
• Supplier Device Package: SPT

封装: SC-72 Formed Leads

MTZJT-723.6B

Rohm Semiconductor

DIODE ZENER 3.6V 500MW DO34

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: MSD

封装: DO-204AG, DO-34, Axial

RB715WTL

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 40V EMD3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 30mA
• Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 10V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMD3

封装: SC-75, SOT-416

BA6208F-E2

Rohm Semiconductor

IC BRIDGE DRIVER PAR 8SOP

• Output Configuration: Half Bridge (2)
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: Bipolar
• Rds On (Typ): -
• Current - Output / Channel: 500mA
• Current - Peak Output: -
• Voltage - Supply: 4.5 V ~ 15 V
• Voltage - Load: 4.5 V ~ 15 V
• Operating Temperature: -20°C ~ 60°C (TA)
• Features: -
• Fault Protection: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

封装: 8-SOIC (0.173", 4.40mm Width)

SML-S13VTT68

Rohm Semiconductor

LED RED CLEAR

• Color: Red
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 450mcd
• Lens Style/Size: Round with Domed Top, 1.60mm
• Voltage - Forward (Vf) (Typ): 1.9V
• Current - Test: 20mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 630nm
• Wavelength - Peak: -
• Features: -
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 3216 (1206)
• Size / Dimension: 3.20mm L x 1.60mm W
• Height (Max): 1.95mm

封装: 1206 (3216 Metric)

VS5V0BC1EST15R

Rohm Semiconductor

TVS DIODE 5VWM 12VC SMD0603

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 60W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: DSN0603-2, SOD-962, SMD0603

封装: 0201 (0603 Metric)

MCR18EZPJ1R0

Rohm Semiconductor

RES SMD 1 OHM 5% 1/4W 1206

• Resistance: 1 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±400ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18EZPF9313

Rohm Semiconductor

RES SMD 931K OHM 1% 1/4W 1206

• Resistance: 931 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR10EZPJ825

Rohm Semiconductor

RES SMD 8.2M OHM 5% 1/8W 0805

• Resistance: 8.2 MOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

LTR50UZPJ683

Rohm Semiconductor

RES SMD 68K OHM 1W 2010 WIDE

• Resistance: 68 kOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 2010 (5025 Metric), 1020
• Supplier Device Package: 2010
• Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: Wide 2010 (5025 Metric), 1020

TRR03EZPF5621

Rohm Semiconductor

RES SMD 5.62K OHM 1% 1/10W 0603

• Resistance: 5.62 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

LTR18EZPJ272

Rohm Semiconductor

RES SMD 2.7K OHM 3/4W 1206 WIDE

• Resistance: 2.7 kOhms
• Tolerance: ±5%
• Power (Watts): 0.75W, 3/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 1206 (3216 Metric), 0612
• Supplier Device Package: 0612 (1632 Metric)
• Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: Wide 1206 (3216 Metric), 0612

ESR18EZPF3001

Rohm Semiconductor

RES SMD 3K OHM 1% 1/3W 1206

• Resistance: 3 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

KTR10EZPJ681

Rohm Semiconductor

RES SMD 680 OHM 5% 1/8W 0805

• Resistance: 680 Ohms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

KTR18EZPJ332

Rohm Semiconductor

RES SMD 3.3K OHM 5% 1/4W 1206

• Resistance: 3.3 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR01MRTF5603

Rohm Semiconductor

RES SMD 560K OHM 1% 1/16W 0402

• Resistance: 560 kOhms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0402 (1005 Metric)

MCR18ERTF2550

Rohm Semiconductor

RES SMD 255 OHM 1% 1/4W 1206

• Resistance: 255 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

KTR10EZPF1581

Rohm Semiconductor

RES SMD 1.58K OHM 1% 1/8W 0805

• Resistance: 1.58 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

PMR01ZZPJU10L

Rohm Semiconductor

RES SMD 0.01 OHM 5% 1/5W 0402

• Resistance: 10 mOhms
• Tolerance: ±5%
• Power (Watts): 0.2W, 1/5W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: 0/ +200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.014" (0.35mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0402 (1005 Metric)

BD49L45G-TL

Rohm Semiconductor

PWR MGMT SUPERVISORY

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 4.5V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-SSOP

封装: TO-236-3, SC-59, SOT-23-3

UMH4NFHATN

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: UMT6

封装: -

BU7980KVT-E2

Rohm Semiconductor

IC DESERIALIZER LVDS 100TQFP

• Function: -
• Data Rate: -
• Input Type: -
• Output Type: -
• Number of Inputs: -
• Number of Outputs: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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RGS80TSX2DGC11

Rohm Semiconductor

IGBT TRENCH FLD 1200V 80A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 555 W
• Switching Energy: 3mJ (on), 3.1mJ (off)
• Input Type: Standard
• Gate Charge: 104 nC
• Td (on/off) @ 25°C: 49ns/199ns
• Test Condition: 600V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 198 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封装: -

RB751S-409HNTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

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DTB143EKFRAT146

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.5A SMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

封装: -

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RB578VYM100FHTR

Rohm Semiconductor

DIODE SCHOTTKY 100V 700MA TUMD2M

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4.35 ns
• Current - Reverse Leakage @ Vr: 200 nA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2M
• Operating Temperature - Junction: 150°C (Max)

封装: -