Rohm Semiconductor 产品

RRH100P03TB1

Rohm Semiconductor

MOSFET P-CH 30V 10A SOP8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 650mW (Ta)
• Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

2SC4081T106R

Rohm Semiconductor

TRANS NPN 50V 0.15A SOT-323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

封装: SC-70, SOT-323

DTA013ZEBTL

Rohm Semiconductor

TRANS PREBIAS PNP 0.15W SC89

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-89, SOT-490
• Supplier Device Package: EMT3F (SOT-416FL)

封装: SC-89, SOT-490

1SR124-400AT-82

Rohm Semiconductor

DIODE GEN PURP 400V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: GSR
• Operating Temperature - Junction: -

封装: DO-204AL, DO-41, Axial

RB551VM-30TE-17

Rohm Semiconductor

DIODE SCHOTTKY 20V 500MA UMD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: UMD2
• Operating Temperature - Junction: 125°C (Max)

封装: SC-90, SOD-323F

UMP1NTR

Rohm Semiconductor

DIODE ARRAY GP 80V 25MA UMD5

• Diode Configuration: 2 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 25mA
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 5mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: UMD5

封装: 5-TSSOP, SC-70-5, SOT-353

BU18TD2WNVX-TL

Rohm Semiconductor

IC REG LINEAR 1.8V 200MA 4SSON

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 200mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: SSON004X1010

封装: 4-UDFN Exposed Pad

BD7683FJ-LBE2

Rohm Semiconductor

LO-NOISE QUASI-RES CTRL DC/DC CO

• Output Isolation: Isolated
• Internal Switch(s): No
• Voltage - Breakdown: -
• Topology: Flyback
• Voltage - Start Up: 19.5V
• Voltage - Supply (Vcc/Vdd): 15 V ~ 27.5 V
• Duty Cycle: -
• Frequency - Switching: 120kHz
• Power (Watts): -
• Fault Protection: Current Limiting, Over Load, Over Voltage
• Control Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J
• Mounting Type: Surface Mount

封装: 8-SOIC (0.154", 3.90mm Width)

BR25H080F-WCE2

Rohm Semiconductor

IC EEPROM 8KBIT 5MHZ 8SOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 8Kb (1K x 8)
• Memory Interface: SPI
• Clock Frequency: 5MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

封装: 8-SOIC (0.173", 4.40mm Width)

BD5423EFS-E2

Rohm Semiconductor

IC AMP AUDIO PWR 17W D 44HTSSOP

• Type: Class D
• Output Type: 2-Channel (Stereo)
• Max Output Power x Channels @ Load: 17W x 2 @ 4 Ohm
• Voltage - Supply: 10 V ~ 16.5 V
• Features: Depop, Mute, Short-Circuit and Thermal Protection
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Supplier Device Package: 44-HTSSOP-A
• Package / Case: 44-VSOP (0.295", 7.50mm Width)

封装: 44-VSOP (0.295", 7.50mm Width)

MCR18EZPF1133

Rohm Semiconductor

RES SMD 113K OHM 1% 1/4W 1206

• Resistance: 113 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18EZHJLR62

Rohm Semiconductor

RES SMD 0.62 OHM 5% 1/4W 1206

• Resistance: 620 mOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18EZPF3603

Rohm Semiconductor

RES SMD 360K OHM 1% 1/4W 1206

• Resistance: 360 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR10EZPF4750

Rohm Semiconductor

RES SMD 475 OHM 1% 1/8W 0805

• Resistance: 475 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR006YZPF3012

Rohm Semiconductor

RES SMD 30.1K OHM 1% 1/20W 0201

• Resistance: 30.1 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0201 (0603 Metric)

KTR18EZPF1300

Rohm Semiconductor

RES SMD 130 OHM 1% 1/4W 1206

• Resistance: 130 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

KTR10EZPJ623

Rohm Semiconductor

RES SMD 62K OHM 5% 1/8W 0805

• Resistance: 62 kOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR25JZHF3651

Rohm Semiconductor

RES SMD 3.65K OHM 1% 1/4W 1210

• Resistance: 3.65 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1210 (3225 Metric)

MCR18ERTF4750

Rohm Semiconductor

RES SMD 475 OHM 1% 1/4W 1206

• Resistance: 475 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18ERTF3902

Rohm Semiconductor

RES SMD 39K OHM 1% 1/4W 1206

• Resistance: 39 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

KTR10EZPF30R1

Rohm Semiconductor

RES SMD 30.1 OHM 1% 1/8W 0805

• Resistance: 30.1 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

PMR50HZPJU8L0

Rohm Semiconductor

RES SMD 0.008 OHM 5% 1W 2010

• Resistance: 8 mOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.019" (0.47mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2010 (5025 Metric)

MCR10ERTF8871

Rohm Semiconductor

RES SMD 8.87K OHM 1% 1/8W 0805

• Resistance: 8.87 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR006YZPF1802

Rohm Semiconductor

RES SMD 18K OHM 1% 1/20W 0201

• Resistance: 18 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0201 (0603 Metric)

RB058LAM-60TFTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 3A PMDTM

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35.3 ns
• Current - Reverse Leakage @ Vr: 4 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 150°C (Max)

封装: -

BD70H38G-2CTR

Rohm Semiconductor

NANO ENERGY, SUPERVISORY IC FOR

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active High
• Reset Timeout: 20µs Minimum
• Voltage - Threshold: 3.76V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

封装: -

SP8J5FRATB

Rohm Semiconductor

MOSFET 2P-CH 7A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 4V Drive
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

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EMD9FHAT2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): -
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: EMT6

封装: -

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