Rohm Semiconductor 产品

RSD150N06TL

Rohm Semiconductor

MOSFET N-CH 60V 15A CPT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CPT3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SCT2160KEC

Rohm Semiconductor

MOSFET N-CH 1200V 22A TO-247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 4V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 800V
• Vgs (Max): +22V, -6V
• FET Feature: -
• Power Dissipation (Max): 165W (Tc)
• Rds On (Max) @ Id, Vgs: 208 mOhm @ 7A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

封装: TO-247-3

DTD114EKT146

Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

封装: TO-236-3, SC-59, SOT-23-3

CDZT2RA4.3B

Rohm Semiconductor

DIODE ZENER 4.3V 100MW VMN2

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±2%
• Power - Max: 100mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: VMN2

封装: SOD-923

RFN10BM3STL

Rohm Semiconductor

DIODE GEN PURP 350V 10A TO252

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 350V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 10µA @ 350V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252
• Operating Temperature - Junction: 150°C (Max)

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BU27TD3WG-TR

Rohm Semiconductor

IC REG LINEAR 2.7V 200MA 5SSOP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 2.7V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 200mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

封装: SC-74A, SOT-753

MNR14E0ABJ224

Rohm Semiconductor

RES ARRAY 4 RES 220K OHM 1206

• Circuit Type: Isolated
• Resistance (Ohms): 220k
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

封装: 1206 (3216 Metric), Convex, Long Side Terminals

MCR18ERTF11R3

Rohm Semiconductor

RES SMD 11.3 OHM 1% 1/4W 1206

• Resistance: 11.3 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR03ERTFL2R00

Rohm Semiconductor

RES SMD 2 OHM 1% 1/10W 0603

• Resistance: 2 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR03EZPFX3304

Rohm Semiconductor

RES SMD 3.3M OHM 1% 1/10W 0603

• Resistance: 3.3 MOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR100JZHJLR75

Rohm Semiconductor

RES SMD 0.75 OHM 5% 1W 2512

• Resistance: 750 mOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2512 (6432 Metric)

MCR10EZHFL2R40

Rohm Semiconductor

RES SMD 2.4 OHM 1% 1/4W 0805

• Resistance: 2.4 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR18EZHJ160

Rohm Semiconductor

RES SMD 16 OHM 5% 1/4W 1206

• Resistance: 16 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR03EZPFX1370

Rohm Semiconductor

RES SMD 137 OHM 1% 1/10W 0603

• Resistance: 137 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

TRR10EZPF3830

Rohm Semiconductor

RES SMD 383 OHM 1% 1/8W 0805

• Resistance: 383 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR10EZPF1821

Rohm Semiconductor

RES SMD 1.82K OHM 1% 0.4W 0805

• Resistance: 1.82 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR10EZPF1401

Rohm Semiconductor

RES SMD 1.4K OHM 1% 0.4W 0805

• Resistance: 1.4 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR18EZPF47R0

Rohm Semiconductor

RES SMD 47 OHM 1% 1/3W 1206

• Resistance: 47 Ohms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

ESR18EZPF4751

Rohm Semiconductor

RES SMD 4.75K OHM 1% 1/3W 1206

• Resistance: 4.75 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

ESR18EZPF2403

Rohm Semiconductor

RES SMD 240K OHM 1% 1/3W 1206

• Resistance: 240 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR006YRTF82R0

Rohm Semiconductor

RES SMD 82 OHM 1% 1/20W 0201

• Resistance: 82 Ohms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0201 (0603 Metric)

MCR006YRTJ242

Rohm Semiconductor

RES SMD 2.4K OHM 5% 1/20W 0201

• Resistance: 2.4 kOhms
• Tolerance: ±5%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0201 (0603 Metric)

BP5011

Rohm Semiconductor

IC AC/DC CONV ZC NONISO

• Type: Enclosed
• Number of Outputs: 1
• Voltage - Input: 60 ~ 120 VAC
• Voltage - Output 1: -5V
• Voltage - Output 2: -
• Voltage - Output 3: -
• Voltage - Output 4: -
• Current - Output (Max): 200mA
• Power (Watts): 1W
• Applications: ITE (Commercial)
• Features: -
• Operating Temperature: -20°C ~ 85°C (With Derating)
• Efficiency: 68%
• Mounting Type: Through Hole
• Package / Case: 13-SIP Module, 9 Leads
• Size / Dimension: 1.38" L x 0.32" W x 0.69" H (35.1mm x 8.1mm x 17.4mm)

封装: 13-SIP Module, 9 Leads

BU45L342G-TL

Rohm Semiconductor

PWR MGMT SUPERVISORY

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 120ms Minimum
• Voltage - Threshold: 3.4V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-SSOP

封装: TO-236-3, SC-59, SOT-23-3

RS6G120BHTB1

Rohm Semiconductor

NCH 40V 210A, HSOP8, POWER MOSFE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 210A (Ta), 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSOP
• Package / Case: 8-PowerTDFN

封装: -

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BM63373S-VC

Rohm Semiconductor

600V IGBT INTELLIGENT POWER MODU

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 10 A
• Voltage: 600 V
• Voltage - Isolation: 1500Vrms
• Package / Case: 25-PowerDIP Module (1.327", 33.70mm)

封装: -

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RS1E281BNTB1

Rohm Semiconductor

MOSFET N-CH 30V 28A/80A 8HSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSOP
• Package / Case: 8-PowerTDFN

封装: -

DTC124EE3TL

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

封装: -