Rohm Semiconductor 产品

US5U29TR

Rohm Semiconductor

MOSFET P-CH 20V 1A TUMT5

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT5
• Package / Case: 6-SMD (5 Leads), Flat Lead

封装: 6-SMD (5 Leads), Flat Lead

RXR035N03TCL

Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT3
• Package / Case: SC-96

封装: SC-96

2SA1576AT106R

Rohm Semiconductor

TRANS PNP 50V 0.15A SOT-323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 140MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

封装: SC-70, SOT-323

EDZCTE616.8B

Rohm Semiconductor

DIODE ZENER 6.8V 150MW EMD2

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±2%
• Power - Max: 150mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 500nA @ 3.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: EMD2

封装: SC-79, SOD-523

RFN6BM2DTL

Rohm Semiconductor

DIODE ARRAY GP 200V 3A TO252

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 3A
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BH31PB1WHFV-TR

Rohm Semiconductor

IC REG LINEAR 3.1V 150MA HVSOF5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 4µA ~ 40µA
• PSRR: 60dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Soft Start
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: HVSOF5

封装: SOT-665

BU4912FVE-TR

Rohm Semiconductor

IC VOLT DETECTOR 1.2V 5VSOF

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High/Active Low
• Reset Timeout: -
• Voltage - Threshold: 1.2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

封装: SC-74A, SOT-753

MCR01MRTF6041

Rohm Semiconductor

RES SMD 6.04K OHM 1% 1/16W 0402

• Resistance: 6.04 kOhms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0402 (1005 Metric)

MCR50JZHF29R4

Rohm Semiconductor

RES SMD 29.4 OHM 1% 1/2W 2010

• Resistance: 29.4 Ohms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2010 (5025 Metric)

MCR100JZHFL6R20

Rohm Semiconductor

RES SMD 6.2 OHM 1% 1W 2512

• Resistance: 6.2 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2512 (6432 Metric)

MCR18EZHF30R9

Rohm Semiconductor

RES SMD 30.9 OHM 1% 1/4W 1206

• Resistance: 30.9 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR10EZHF24R3

Rohm Semiconductor

RES SMD 24.3 OHM 1% 1/8W 0805

• Resistance: 24.3 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR10EZHF2211

Rohm Semiconductor

RES SMD 2.21K OHM 1% 1/8W 0805

• Resistance: 2.21 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

LTR50UZPJ110

Rohm Semiconductor

RES SMD 11 OHM 1W 2010 WIDE

• Resistance: 11 Ohms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 2010 (5025 Metric), 1020
• Supplier Device Package: 2010
• Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: Wide 2010 (5025 Metric), 1020

ESR25JZPF3003

Rohm Semiconductor

RES SMD 300K OHM 1% 1/2W 1210

• Resistance: 300 kOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1210 (3225 Metric)

ESR18EZPF1910

Rohm Semiconductor

RES SMD 191 OHM 1% 1/3W 1206

• Resistance: 191 Ohms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR50JZHJ330

Rohm Semiconductor

RES SMD 33 OHM 5% 1/2W 2010

• Resistance: 33 Ohms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2010 (5025 Metric)

MCR18ERTF6801

Rohm Semiconductor

RES SMD 6.8K OHM 1% 1/4W 1206

• Resistance: 6.8 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR10ERTF2553

Rohm Semiconductor

RES SMD 255K OHM 1% 1/8W 0805

• Resistance: 255 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

UCR18EVHFSR012

Rohm Semiconductor

RES SMD 0.012 OHM 1% 1/2W 1206

• Resistance: 12 mOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: 0/ +350ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR100JZHJ513

Rohm Semiconductor

RES SMD 51K OHM 5% 1W 2512

• Resistance: 51 kOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2512 (6432 Metric)

TRR01MZPF4222

Rohm Semiconductor

RES SMD 42.2K OHM 1% 1/16W 0402

• Resistance: 42.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0402 (1005 Metric)

MCR03ERTJ2R7

Rohm Semiconductor

RES SMD 2.7 OHM 5% 1/10W 0603

• Resistance: 2.7 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±400ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

BAW156HMFHT116

Rohm Semiconductor

DIODE ARRAY GP 80V 215MA SSD3

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io) (per Diode): 215mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3 µs
• Current - Reverse Leakage @ Vr: 5 nA @ 75 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SSD3

封装: -

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RTL035N03FRATR

Rohm Semiconductor

MOSFET N-CH 30V 3.5A TUMT6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT6
• Package / Case: 6-SMD, Flat Leads

封装: -

UMZ5-1NFHT106

Rohm Semiconductor

ZENER ARRAYS FOR TERMINAL PROTEC

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 5.1 V
• Tolerance: ±5.19%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMD3

封装: -

2SCR512PFRAT100

Rohm Semiconductor

TRANS NPN 30V 2A MPT3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2 A
• Voltage - Collector Emitter Breakdown (Max): 30 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
• Power - Max: 500 mW
• Frequency - Transition: 320MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: MPT3

封装: -

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RB298NS100FHTL

Rohm Semiconductor

DIODE ARR SCHOTT 100V 30A LPDS

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 870 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: LPDS

封装: -